IRF9530, RF1S9530SM. 12A, 100V, Ohm, P-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging

Transcription

1 IRF953, RF1953M 12A, 1V,.3 Ohm, P-Channel Power MOFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA Ordering Information PART NUMBER PACKAE BRAN IRF953 TO-22AB IRF953 Features 12A, 1V r (ON) =.3Ω ingle Pulse Avalanche Energy Rated OA is Power issipation Limited Nanosecond witching peeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334, uidelines for oldering urface Mount Components to PC Boards ymbol RF1953M TO-263AB RF1953 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1953M9A. Packaging JEEC TO-22AB JEEC TO-263A RAIN (FLANE) OURCE RAIN ATE ATE OURCE RAIN (FLANE)

2 Absolute Maximum Ratings T C = 25 o C, Unless Otherwise pecified IRF953, RF1953M UNIT rain to ource Breakdown Voltage (Note 1) V -1 V rain to ate Voltage (R = 2kΩ) (Note 1) V R -1 V Continuous rain Current I T C = 1 o C I A A Pulsed rain Current (Note 3) I M -48 A ate to ource Voltage V ±2 V Maximum Power issipation P 75 W issipation erating Factor W/ o C ingle Pulse Avalanche Energy Rating (Note 4) E A 5 mj Operating and torage Temperature T J, T T -55 to 15 o C Maximum Temperature for oldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, ee Techbrief T pkg 26 o C o C CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to T J = 125 o C. IRF953, RF1953M Electrical pecifications T C = 25 o C, Unless Otherwise pecified PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT rain to ource Breakdown Voltage BV I = -25µA, V = V, (Figure 1) V ate Threshold Voltage V (TH) V = V, I = -25µA V Zero ate Voltage rain Current I V = Rated BV, V = V µa V =.8 x Rated BV,V = V, T C = 125 o C µa On-tate rain Current (Note 2) I (ON) V > I (ON) x r (ON)MAX, V = -1V, A (Figure 7) ate to ource Leakage Current I V = ±2V - - ±1 na rain to ource On Resistance (Note 2) r (ON) I = -6.5A, V = -1V, (Figures 8, 9) Ω Forward Transconductance (Note 2) g fs V > I (ON) x r (ON) Max, I = -6.5A (Figure 12) Turn-On elay Time t d(on) V = 5V, I -12A, R = 5Ω, V = 1V ns Rise Time t R L = 4.2Ω, (Figures 17, 18) r ns MOFET witching Times are Essentially Independent of Operating Temperature Turn-Off elay Time t d(off) ns Fall Time t f ns Total ate Charge (ate to ource + ate to rain) Q g(tot) V = -1V, I = -12A, V =.8 x Rated BV, (Figure 14, 19, 2) ate Charge is Essentially Independent of Operating Temperature nc ate to ource Charge Q gs nc ate to rain ( Miller ) Charge Q gd nc Input Capacitance C I V = -25V, V = V, f = 1MHz, (Figure 11) pf Output Capacitance C O pf Reverse Transfer Capacitance C R pf Internal rain Inductance L Measured From the Contact crew On Tab To Center of ie Measured From the rain Lead, 6mm (.25in) From Package to Center of ie Internal ource Inductance L Measured From The ource Lead, 6mm (.25in) From Header to ource Bonding Pad Modified MOFET ymbol howing the Internal evices Inductances nh nh nh Thermal Resistance Junction to Case R θjc Thermal Resistance Junction to Ambient R θja Typical ocket Mount L L o C/W o C/W

3 IRF953, RF1953M ource to rain iode pecifications PARAMETER YMBOL TET CONITION MIN TYP MAX UNIT Continuous ource to rain Current I Modified MOFET A ymbol howing the Integral Reverse Pulse ource to rain Current I M A (Note 2) P-N Junction iode ource to rain iode Voltage (Note 2) V T J = 25 o C, I = -12A, V = V, V (Figure 13) Reverse Recovery Time t rr T J = 15 o C, I = -12A, di /dt = 1A/µs ns Reverse Recovery Charge Q RR T J = 15 o C, I = -12A, di /dt = 1A/µs µc NOTE: 2. Pulse test: pulse width 3µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by max junction temperature. ee Transient Thermal Impedance curve (Figure 3). 4. V = 25V, starting T J = 25 o C, L = 5.2mH, R = 25Ω, peak I A = 12A. ee Figures 15, 16. Typical Performance Curves Unless Otherwise pecified POWER IIPATION MULTIPLIER T C, CAE TEMPERATURE ( o C) T C, CAE TEMPERATURE ( o C) 15 FIURE 1. NORMALIZE POWER IIPATION vs CAE TEMPERATURE FIURE 2. MAXIMUM CONTINUOU RAIN CURRENT vs CAE TEMPERATURE 1 Z θjc, NORMALIZE THERMAL IMPEANCE INLE PULE t 1 t 2 t 2 NOTE: UTY FACTOR: = t 1 /t 2 PEAK T J = P M x Z θjc + R θja +T C t 1, RECTANULAR PULE URATION (s) P M 1 FIURE 3. NORMALIZE MAXIMUM TRANIENT THERMAL IMPEANCE

4 IRF953, RF1953M Typical Performance Curves Unless Otherwise pecified (Continued) T C = 25 o C OPERATION IN THI AREA MAY BE LIMITE BY r (ON) T J = MAX RATE INLE PULE V, RAIN TO OURCE VOLTAE (V) 1µs 1µs 1ms 1ms 1ms C -1-2 V = -9V V = -1V -16 PULE URATION = 8µs V = -8V -12 UTY CYCLE =.5% MAX V = -7V -8 V = -6V -4 V = -5V V = -4V V, RAIN TO OURCE VOLTAE (V) -5 FIURE 4. FORWAR BIA AFE OPERATIN AREA FIURE 5. OUTPUT CHARACTERITIC r (ON) RAIN TO OURCE V = -8V V = -9V V = -1V V = -6V V = -5V V = -4V ON REITANCE (Ω) V, RAIN TO OURCE VOLTAE (V) FIURE 6. ATURATION CHARACTERITIC 2µs PULE TET V = -1V V = -7V PULE URATION = 8µs UTY CYCLE =.5% MAX V = - 2V NOTE: Heating effect of 2µs pulse is minimal. FIURE 8. RAIN TO OURCE ON REITANCE vs ATE VOLTAE AN RAIN CURRENT -5 I (ON), ON-TATE RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON REITANCE V I (ON) x r (ON) PULE URATION = 8µs UTY CYCLE =.5% MAX -55 o C 25 o C 125 o C V, ATE TO OURCE VOLTAE (V) FIURE 7. TRANFER CHARACTERITIC 2.2 V = -1V, I = -6.5A PULE URATION = 8µs UTY CYCLE =.5% MAX T J, JUNCTION TEMPERATURE ( o C) 12 FIURE 9. NORMALIZE RAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE

5 IRF953, RF1953M Typical Performance Curves Unless Otherwise pecified (Continued) NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE I = 25µA C, CAPACITANCE (pf) C I C O C R V = V, f = 1MHz C I = C + C C R = C C O C + C T J, JUNCTION TEMPERATURE ( o C) FIURE 1. NORMALIZE RAIN TO OURCE BREAKOWN VOLTAE vs JUNCTION TEMPERATURE V, RAIN TO OURCE VOLTAE (V) FIURE 11. CAPACITANCE vs RAIN TO OURCE VOLTAE g fs, TRANCONUCTANCE () T J = -55 o C T J = 25 o C T J = 125 o C PULE URATION = 8µs UTY CYCLE =.5% MAX -2 I, RAIN CURRENT (A) PULE URATION = 8µs UTY CYCLE =.5% MAX T J = 15 o C T J = 25 o C V, OURCE TO RAIN VOLTAE (V) FIURE 12. TRANCONUCTANCE vs RAIN CURRENT FIURE 13. OURCE TO RAIN IOE VOLTAE I = -12A V, ATE TO OURCE (V) V = -2V V = -5V V = -8V Q g(tot), TOTAL ATE CHARE (nc) FIURE 14. ATE TO OURCE VOLTAE vs ATE CHARE

6 IRF953, RF1953M Test Circuits and Waveforms V t AV L VARY t P TO OBTAIN REQUIRE PEAK I A R - V + V t P UT I A I A.1Ω t P V V V BV FIURE 15. UNCLAMPE ENERY TET CIRCUIT FIURE 16. UNCLAMPE ENERY WAVEFORM t ON t d(on) t OFF t d(off) R L t r 1% t f 1% V R UT - V + V 9% 9% V 1% 5% PULE WITH 5% 9% FIURE 17. WITCHIN TIME TET CIRCUIT FIURE 18. REITIVE WITCHIN WAVEFORM CURRENT REULATOR -V (IOLATE UPPLY) 12V BATTERY.2µF 5kΩ.3µF UT V Q gs V Q gd I (REF) I CURRENT AMPLIN REITOR UT +V I CURRENT AMPLIN REITOR V I (REF) Q g(tot) FIURE 19. ATE CHARE TET CIRCUIT FIURE 2. ATE CHARE WAVEFORM