AOD444/AOI444 60V N-Channel MOSFET
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- Dwayne Logan
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1 AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Product ummary V I (at V =V) R (ON) (at V =V) R (ON) (at V =.V) 6V A < 6mΩ < 8mΩ % UI Tested % Rg Tested TopView TO PAK Bottom View TopView TOA IPAK Bottom View Absolute Maximum Ratings T A = C unless otherwise noted Parameter rainource Voltage ateource Voltage ymbol V V Maximum 6 ± Units V V Continuous rain T C = C Current I T C = C 9 A Pulsed rain Current C I M 3 Continuous rain T A = C I M Current T A =7 C 3 A Avalanche Current C Avalanche energy L=.mH C I A, I AR E A, E AR 9 8 A mj T C = C Power issipation B P T C = C W T A = C. Power issipation A P M T A =7 C.3 W Junction and torage Temperature Range T J, T T to 7 C Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 7. 3 R θja Maximum JunctiontoAmbient A teadytate 6 Maximum JunctiontoCase teadytate 7. R θjc Units C/W C/W C/W Rev : Aug 9 Page of 6
2 AO/AOI Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =µa, V =V 6 V I Zero ate Voltage rain Current V =8V, V =V T J = C µa I atebody leakage current V =V, V = ±V na V (th) ate Threshold Voltage V =V I =µa. 3 V I (ON) On state drain current V =V, V =V 3 A V =V, I =A 7 6 R (ON) tatic rainource OnResistance T J = C 8 mω V =.V, I =6A 67 8 mω g F Forward Transconductance V =V, I =A V iode Forward Voltage I =A,V =V.7 V I Maximum Bodyiode Continuous Current A YNAMIC PARAMETER C iss Input Capacitance 36 pf C oss Output Capacitance V =V, V =3V, f=mhz 6 8 pf C rss Reverse Transfer Capacitance 6 7 pf R g ate resistance V =V, V =V, f=mhz.6.. Ω WITCHIN PARAMETER Q g (V) Total ate Charge 7. nc Q g (.V) Total ate Charge 3.8 nc V =V, V =3V, I =A Q gs ate ource Charge. nc Q gd ate rain Charge.9 nc t (on) TurnOn elaytime. ns t r TurnOn Rise Time V =V, V =3V, R L =.Ω, 3. ns t (off) TurnOff elaytime R EN =3Ω 6 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =A, di/dt=a/µs 7 3 ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=a/µs 3 nc A. The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. The Power dissipation P M is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of 7 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =7 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =7 C. Ratings are based on low frequency and duty cycles to keep initial T J = C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =7 C. The OA curve provides a single pulse rating.. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev : Aug 9 Page of 6
3 AO/AOI TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 3 7V 6V 6 V =V I (A) V V.V V V =3.V I (A) 8 C C R (ON) (mω) 3 V (Volts) Fig : OnRegion Characteristics (Note E) V =.V V =V I (A) Figure 3: OnResistance vs. rain Current and ate Voltage (Note E) Normalized OnResistance 3 6 V (Volts) Figure : Transfer Characteristics (Note E) V =V I =A 7 V =.V I =6A Temperature ( C) Figure : OnResistance vs. Junction Temperature 8 (Note E) 3.E R (ON) (mω) 9 7 C I =A I (A).E.E.E.E3 C C C V (Volts) Figure : OnResistance vs. ateource Voltage (Note E).E.E V (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev : Aug 9 Page 3 of 6
4 AO/AOI TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 7 V (Volts) 8 6 V =3V I =A Capacitance (pf) 6 3 C oss C rss C iss 6 8 Q g (nc) Figure 7: atecharge Characteristics 3 V (Volts) Figure 8: Capacitance Characteristics. I (Amps)... R (ON) limited T J(Max) =7 C T C = C C µs µs µs ms ms Power (W) 6 8 T J(Max) =7 C T C = C 7... V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F).... Figure : ingle Pulse Power Rating Junctionto 8 Case (Note F) Z θjc Normalized Transient Thermal Resistance. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =7. C/W In descending order =.,.3,.,.,.,., single pulse ingle Pulse T Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on Rev : Aug 9 Page of 6
5 AO/AOI TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC I AR (A) Peak Avalanche Current 6 T A = C T A = C T A = C T A = C Time in avalanche, t A (µs) Figure : ingle Pulse Avalanche capability (Note C) Power issipation (W) 7 7 T CAE ( C) Figure 3: Power erating (Note F) Current rating I (A) 8 6 Power (W) T A = C T CAE ( C) Figure : Current erating (Note F)... 8 Figure : ingle Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance.. =T on /T T J,PK =T A P M.Z θja.r θja R θja =6 C/W ingle Pulse In descending order =.,.3,.,.,.,., single pulse T Figure 6: Normalized Maximum Transient Thermal Impedance (Note H) P T on Rev : Aug 9 Page of 6
6 AO/AOI AO/AOI ate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Rg Id VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev : Aug 9 Page 6 of 6
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FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
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