Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.

Transcription

1 V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion applicaions. Produc Summary NChannel PChannel V DS = V V I D = 3.4A (V GS =4.V).A (V GS =4.V) R DS(ON) R DS(ON) < 6mΩ (V GS =4.V) < 7mΩ (V GS =4.V) < 7mΩ (V GS =.V) < 9mΩ (V GS =.V) < mω (V GS =.8V) < mω (V GS =.8V) Top View TSOP6 Boom View Top View D D Pin G S G D S D G S nchannel G S pchannel Absolue Maximum Raings T A = unless oherwise noed Parameer Symbol Max nchannel Max pchannel Unis DrainSource Volage V T A =7 C V DS GaeSource Volage ±8 ±8 V Coninuous Drain Curren Pulsed Drain Curren C Power Dissipaion B T A = T A = T A =7 C Juncion and Sorage Temperaure Range V GS I D I DM P D T J, T STG o A W C Thermal Characerisics Parameer Symbol Typ Max Maximum JuncionoAmbien A s 78 R θja Maximum JuncionoAmbien A D SeadySae 6 Maximum JuncionoLead SeadySae 64 8 R θjl Unis C/W C/W C/W Rev 4: Sep Page of 9

2 NChannel Elecrical Characerisics (T J = unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STATIC PARAMETERS BV DSS DrainSource Breakdown Volage I D =µa, V GS =V V V DS =V, V GS =V I DSS Zero Gae Volage Drain Curren µa T J = C I GSS GaeBody leakage curren V DS =V, V GS = ±8V ± na V GS(h) Gae Threshold Volage V DS =V GS I D =µa.4.7 V I D(ON) On sae drain curren V GS =4.V, V DS =V 3 A R DS(ON) Saic DrainSource OnResisance V GS =4.V, I D =3.4A V GS =.V, I D =3A V GS =.8V, I D =A 6 T J = mω 68 mω g FS Forward Transconducance V DS =V, I D =3.4A 6 S V SD Diode Forward Volage I S =A,V GS =V.7 V I S Maximum BodyDiode Coninuous Curren. A DYNAMIC PARAMETERS C iss Inpu Capaciance 6 3 pf C oss Oupu Capaciance V GS =V, V DS =V, f=mhz pf C rss Reverse Transfer Capaciance pf R g Gae resisance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (4.V) Toal Gae Charge nc Q gs Gae Source Charge V GS =4.V, V DS =V, I D =3.4A.4 nc Q gd Gae Drain Charge.6 nc D(on) TurnOn DelayTime. ns r TurnOn Rise Time V GS =V, V DS =V, R L =.9Ω, 3. ns D(off) TurnOff DelayTime R GEN =3Ω ns f TurnOff Fall Time 3 ns rr Body Diode Reverse Recovery Time I F =3.4A, di/d=a/µs 4 9 ns Q rr Body Diode Reverse Recovery Charge I F =3.4A, di/d=a/µs 3.8 nc A. The value of R θja is measured wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A =. The value in any given applicaion depends on he user's specific board design. B. The power dissipaion P D is based on T J(MAX) = C, using s juncionoambien hermal resisance. C. Repeiive raing, pulse widh limied by juncion emperaure T J(MAX) = C. Raings are based on low frequency and duy cycles o keep iniialt J =. D. The R θja is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. E. The saic characerisics in Figures o 6 are obained using <3µs pulses, duy cycle.% max. F. These curves are based on he juncionoambien hermal impedence which is measured wih he device mouned on in FR4 board wih oz. Copper, assuming a maximum juncion emperaure of T J(MAX) = C. The SOA curve provides a single pulse raing. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Sep Page of 9

3 NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 4.V 6 V DS =V.V V I D (A) 8 I D (A) 8 4 V GS =.V V DS (Vols) Fig : OnRegion Characerisics (Noe E)... V GS (Vols) Figure : Transfer Characerisics (Noe E) R DS(ON) (mω) 8 6 V GS =.8V V GS =.V Normalized OnResisance.6.4. V GS =.V I D =3A V GS =.8V I D =A 7 V GS =4.V I D =3.4A 4 V GS =4.V I D (A) Figure 3: OnResisance vs. Drain Curren and Gae Volage (Noe E) Temperaure ( C) Figure 4: OnResisance vs. Juncion Temperaure 8 (Noe E).E I D =3.4A.E 4.E R DS(ON) (mω) 8 I S (A).E.E 6.E3.E V GS (Vols) Figure : OnResisance vs. GaeSource Volage (Noe E).E V SD (Vols) Figure 6: BodyDiode Characerisics (NoeE) Rev 4: Sep Page 3 of 9

4 NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V GS (Vols) 4 3 V DS =V I D =3.4A Capaciance (pf) 4 3 C oss C iss 3 4 Q g (nc) Figure 7: GaeCharge Characerisics C rss V DS (Vols) Figure 8: Capaciance Characerisics. T A = I D (Amps).... R DS(ON) limied µs µs ms ms T J(Max) = C s T A = DC.. V DS (Vols) Figure 9: Maximum Forward Biased Safe Operaing Area (Noe F) Power (W)... Pulse Widh (s) Figure : Single Pulse Power Raing JuncionoAmbien (Noe F) Z θja Normalized Transien Thermal Resisance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.,., single pulse Single Pulse P D Pulse Widh (s) Figure : Normalized Maximum Transien Thermal Impedance (Noe F) T on T Rev 4: Sep Page 4 of 9

5 Gae Charge Tes Circui & Waveform Qg V Qgs Qgd Ig RL Resisive Swiching Tes Circui & Waveforms Charge Rg 9% % d(on) r d(off) f on off Unclamped Inducive Swiching (UIS) Tes Circui & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Diode Recovery Tes Circui & Waveforms Q = Id rr Ig Isd L Isd I F di/d I RM rr Rev 4: Sep Page of 9

6 PChannel Elecrical Characerisics (T J = unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis STATIC PARAMETERS BV DSS DrainSource Breakdown Volage I D =µa, V GS =V V I DSS Zero Gae Volage Drain Curren V DS =V, V GS =V T J = C µa I GSS GaeBody leakage curren V DS =V, V GS = ±8V ± na V GS(h) Gae Threshold Volage V DS =V GS I D =µa.4.6 V I D(ON) On sae drain curren V GS =4.V, V DS =V 3 A V GS =4.V, I D =.A 6 7 mω T J = 8 R DS(ON) Saic DrainSource OnResisance V GS =.V, I D =A 7 9 mω V GS =.8V, I D =A 8 mω g FS Forward Transconducance V DS =V, I D =.A 3 S V SD Diode Forward Volage I S =A,V GS =V.7 V I S Maximum BodyDiode Coninuous Curren. A DYNAMIC PARAMETERS C iss Inpu Capaciance 6 74 pf C oss Oupu Capaciance V GS =V, V DS =V, f=mhz 8 pf C rss Reverse Transfer Capaciance 7 pf R g Gae resisance V GS =V, V DS =V, f=mhz 3 Ω SWITCHING PARAMETERS Q g (4.V) Toal Gae Charge 8. nc Q gs Gae Source Charge V GS =4.V, V DS =V, I D =.A. nc Q gd Gae Drain Charge. nc D(on) TurnOn DelayTime 7. ns r TurnOn Rise Time V GS =4.V, V DS =V, R L =4Ω, 36 ns D(off) TurnOff DelayTime R GEN =6Ω 3 ns f TurnOff Fall Time 6 ns rr Body Diode Reverse Recovery Time I F =.A, di/d=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =.A, di/d=a/µs 7 nc A. The value of R θja is measured wih he device mouned on in FR4 board wih oz. Copper, in a sill air environmen wih T A =. The value in any given applicaion depends on he user's specific board design. B. The power dissipaion P D is based on T J(MAX) = C, using s juncionoambien hermal resisance. C. Repeiive raing, pulse widh limied by juncion emperaure T J(MAX) = C. Raings are based on low frequency and duy cycles o keep iniialt J =. D. The R θja is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. E. The saic characerisics in Figures o 6 are obained using <3µs pulses, duy cycle.% max. F. These curves are based on he juncionoambien hermal impedence which is measured wih he device mouned on in FR4 board wih oz. Copper, assuming a maximum juncion emperaure of T J(MAX) = C. The SOA curve provides a single pulse raing. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Sep Page 6 of 9

7 PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4V 4.V 3.V 3V V DS =V.V I D (A) V I D (A) V GS =.V 3 4 V DS (Vols) Fig : OnRegion Characerisics (Noe E)... 3 V GS (Vols) Figure : Transfer Characerisics (Noe E).6 R DS(ON) (mω) V GS =.8V V GS =.V V GS =4.V Normalized OnResisance.4. V GS =.V I D =A V GS =.8V I D =A 7 V GS =4.V I D =.A I D (A) Figure 3: OnResisance vs. Drain Curren and Gae Volage (Noe E) Temperaure ( C) Figure 4: OnResisance vs. Juncion Temperaure (Noe E) I D =.A.E.E 4.E R DS(ON) (mω) 8 I S (A).E.E.E3 6.E V GS (Vols) Figure : OnResisance vs. GaeSource Volage (Noe E).E V SD (Vols) Figure 6: BodyDiode Characerisics (Noe E) Rev 4: Sep Page 7 of 9

8 PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V GS (Vols) 4 3 V DS =V I D =.A Capaciance (pf) C iss C oss Q g (nc) Figure 7: GaeCharge Characerisics C rss V DS (Vols) Figure 8: Capaciance Characerisics. T A = I D (Amps)... R DS(ON) limied T J(Max) = C T A = µs µs ms ms s DC Power (W)... V DS (Vols) Figure 9: Maximum Forward Biased Safe Operaing Area (Noe F)... Pulse Widh (s) Figure : Single Pulse Power Raing JuncionoAmbien (Noe F) Z θja Normalized Transien Thermal Resisance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.,., single pulse Single Pulse..... Pulse Widh (s) Figure : Normalized Maximum Transien Thermal Impedance (Noe F) P D T on T Rev 4: Sep Page 8 of 9

9 Gae Charge Tes Circui & Waveform Qg V Qgs Qgd Ig Charge RL Resisive Swiching Tes Circui & Waveforms on off d(on) r d(off) f Rg 9% % Id L Unclamped Inducive Swiching (UIS) Tes Circui & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Tes Circui & Waveforms Q = Id rr Ig Isd L Isd I F di/d I RM rr Rev 4: Sep Page 9 of 9