IXFK120N65X2 IXFX120N65X2

Transcription

1 X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes Condiions Maximum Raings V SS = 25 C o 5 C 65 V V GR = 25 C o 5 C, R GS = M 65 V S Coninuous 3 V M Transien 4 V I 25 = 25 C 2 A I M = 25 C, Pulse Widh Limied by M 24 A I A = 25 C 5 A E AS = 25 C 3.5 J P = 25 C 25 W dv/d I S I M, V V SS, 5 C 5 V/ns C M 5 C T sg C T L Maximum Lead Temperaure for Soldering 3 C T SOL.6 mm (.62in.) from Case for s 26 C M d Mouning Torque (TO-264).3/ Nm/lb.in F C Mouning Force (PLUS247) 2..2 / N/lb Weigh TO-264 g PLUS247 6 g Symbol Tes Condiions Characerisic Values ( = 25 C Unless Oherwise Specified) Min. Typ. Max. BV SS = V, I = 3mA 65 V (h) V S =, I = 8mA V I GSS = 3V, V S = V na I SS V S = V SS, = V 5 A = 25 C 5 ma R S(on) = V, I =.5 I 25, Noe 24 m G S PLUS247 (IXFX) G S G = Gae = rain S = Source Tab = rain Feaures Inernaional Sandard Packages Low Q G Avalanche Raed Low Package Inducance Advanages High Power ensiy Easy o Moun Space Savings Applicaions Swich-Mode and Resonan-Mode Power Supplies C-C Converers PFC Circuis Tab Tab AC and C Moor rives Roboics and Servo Conrols 26 IXYS CORPORATION, All Righs Reserved S685C(2/6)

2 Symbol Tes Condiions Characerisic Values ( = 25 C, Unless Oherwise Specified) Min. Typ. Max g fs V S = V, I =.5 I 25, Noe S R Gi Gae Inpu Resisance.74 C iss 4 nf C oss = V, V S = 2, f = MHz 87 pf C rss 5.5 pf Effecive Oupu Capaciance C o(er) Energy relaed V 455 pf GS = V C o(r) Time relaed V 93 pf S =.8 V SS d(on) 39 ns Resisive Swiching Times r 26 ns = V, V S =.5 V SS, I =.5 I 25 d(off) 82 ns R G = (Exernal) f 2 ns Q g(on) 24 nc Q gs = V, V S =.5 V SS, I =.5 I nc Q gd 65 nc R hjc. C/W R hcs.5 C/W TO-264 Ouline R R L b x2 e Terminals: = Gae 2,4 = rain 3 = Source IXFK2N65X2 IXFX2N65X2 E 2 3 b b2 Q S Q L c A A 4 P BACK SIE Source-rain iode Symbol Tes Condiions Characerisic Values ( = 25 C, Unless Oherwise Specified) Min. Typ. Max. I S = V 2 A I SM Repeiive, Pulse Widh Limied by M 48 A V S I F = I S, = V, Noe.4 V rr 22 ns I F = 6A, -di/d = A/ s Q RM 2.3 μc V I R = V, = V RM 2. A PLUS 247 TM Ouline A A2 L R L E 2 3 A b e C 3 PLCS b2 2 PLCS 2 PLCS b4 Terminals: - Gae 2,4 - rain 3 - Source Q 2 E 4 Noe. Pulse es, 3 s, duy cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The produc presened herein is under developmen. The Technical Specificaions offered are derived from a subjecive evaluaion of he design, based upon prior knowledge and experience, and consiue a "considered reflecion" of he anicipaed resul. IXYS reserves he righ o change limis, es condiions, and dimensions wihou noice. IXYS Reserves he Righ o Change Limis, Tes Condiions, and imensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or more of he following U.S. paens: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,45 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537

3 IXFK2N65X2 IXFX2N65X2 Fig.. Oupu = 25ºC Fig. 2. Exended Oupu = 25ºC 2 = V 28 = V 24 9V Fig. 3. Oupu = 25ºC = V Fig. 4. R S(on) Normalized o I = 6A Value vs. Juncion Temperaure = V V RS(on) - Normalized I = 2A I = 6A egrees Cenigrade 3.5 Fig. 5. R S(on) Normalized o I = 6A Value vs. rain Curren.3 Fig. 6. Normalized Breakdown & Threshold Volages vs. Juncion Temperaure RS(on) - Normalized = V = 25ºC = 25ºC BVSS / VGS(h) - Normalized BV SS (h) I A - Amperes egrees Cenigrade 26 IXYS CORPORATION, All Righs Reserved

4 IXFK2N65X2 IXFX2N65X2 Fig. 7. Maximum rain Curren vs. Case Temperaure 8 Fig. 8. Inpu Admiance I - Amperes I - Amperes = 25ºC 25ºC - 4ºC egrees Cenigrade Vols 6 Fig. 9. Transconducance 3 Fig.. Forward Volage rop of Inrinsic iode 4 = - 4ºC 25 2 g f s - Siemens ºC 25ºC I S - Amperes 2 5 = 25ºC 2 5 = 25ºC I - Amperes V S - Vols Fig.. Gae Charge Fig. 2. Capaciance, 9 V S = 32 VGS - Vols I = 6A I G = ma Capaciance - PicoFarads,, f = MHz C iss Coss Crss Q G - NanoCoulombs IXYS Reserves he Righ o Change Limis, Tes Condiions, and imensions.

5 IXFK2N65X2 IXFX2N65X2 Fig. 3. Oupu Capaciance Sored Energy Fig. 4. Forward-Bias Safe Operaing Area 9 R S(on) Limi EOSS - MicroJoules Fig. 5. Maximum Transien. ms Thermal Impedance ,.3 Fig. 5. Maximum Transien Thermal Impedance aaaaa. Z(h)JC - K / W = 5ºC = 25ºC Single Pulse 25µs µs ms Pulse Widh - Seconds 26 IXYS CORPORATION, All Righs Reserved IXYS REF: F_2N65X2(X9-S62) 2-4-5