NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 February 99 NS9959 ual N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes. These devices are paricularly suied for low volage applicaions such as C moor conrol and C/C conversion where fas swiching, low in-line power loss, and resisance o ransiens are needed..a, 5V. R S(ON) V = V High densiy cell design for exremely low R S(ON). High power and curren handling capabiliy in a widely used surface moun package. ual MOSFET in surface moun package. 5 7 Absolue Maximum Raings T A = 5 C unless oherwise noed Symbol Parameer NS9959 Unis V SS rain-source Volage 5 V V S Gae-Source Volage ± V I rain Curren - T A = 5 C (Noe a) ±. A - T A = 7 C (Noe a) ±. - T A = 5 C ± P Power issipaion for ual Operaion W Power issipaion for Single Operaion (Noe a). (Noe b) (Noe c).9 T,T STG Operaing and Sorage Temperaure Range -55 o 5 C THERMAL CHARACTERISTICS R θa Thermal Resisance, uncion-o-ambien (Noe a) 7 C/W R θc Thermal Resisance, uncion-o-case (Noe ) C/W 997 Fairchild Semiconducor Corporaion NS9959.SAM

2 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V = V, I = 5 µa 5 V I SS Zero Gae Volage rain Curren V S = V, V = V µa T = 55 C 5 µa I SF Gae - Body Leakage, Forward V = V, V S = V na I SR Gae - Body Leakage, Reverse V = - V, V S = V - na ON CHARACTERISTICS (Noe) V (h) Gae Threshold Volage V S = V, I = 5 µa V R S(ON) Saic rain-source On-Resisance V = V, I =.5 A. Ω V = 5 V, I =. A.5 I (on) On-Sae rain Curren V = V, V S = 5 V A g FS Forward Transconducance V S = 5 V, I =. A.7 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = 5 V, V = V, 5 5 pf C oss Oupu Capaciance f =. MHz 5 5 pf C rss Reverse Transfer Capaciance 5 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = V, I =. A, ns V = V, R L = 5 Ω, r Turn - On Rise Time 7 ns R GEN = Ω (off) Turn - Off elay Time 9 ns f Turn - Off Fall Time 7 ns Q g Toal Gae Charge V S = 5 V,. 5 nc Q gs Gae-Source Charge I =. A, V = V. nc Q gd Gae-rain Charge.5 nc NS9959.SAM

3 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Coninuos rain-source iode Forward Curren. A V S rain-source iode Forward Volage V = V, I S =.5 A (Noe ).. V rr Reverse Recovery Time V = V, I F =.5 A, di F /d = A/µs ns Noes:. R θa is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θc is guaraneed by design while R θca is deermined by he user's board design. P () = T T A = T T A = Rθ A() Rθ C+RθCA() I () R S(ON ) T Typical R θa for single device operaion using he board layous shown below on.5"x5" FR- PCB in a sill air environmen: a. 7 o C/W when mouned on a.5 in pad of oz cpper. b. 5 o C/W when mouned on a. in pad of oz cpper. c. 5 o C/W when mouned on a. in pad of oz cpper. a b c Scale : on leer size paper. Pulse Tes: Pulse Widh < µs, uy Cycle <.%. NS9959.SAM

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V =V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE... V = V 7.V.V 9.V V 5 7 V, RAIN-SOURCE VOLTAGE (V) S Figure. On-Region Characerisics.. I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih Gae Volage and rain Curren. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE (OHMS) I =.5A V =V T, UNCTION TEMPERATURE ( C) Figure. On-Resisance Variaion wih Temperaure. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE 5 T = 5 C 5 C V = V -55 C I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) V S = V T = -55 C V, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characerisics. 5 5 V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE (V)...9. V S= V I = 5µA T, UNCTION TEMPERATURE ( C) Figure. Gae Threshold Variaion wih Temperaure. NS9959.SAM

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE (V) I = 5µA T, UNCTION TEMPERATURE ( C) Figure 7. Breakdown Volage Variaion wih Temperaure. I, REVERSE RAIN CURRENT (A)..... V =V T = 5 C 5 C -55 C V, BOY IOE FORWAR VOLTAGE (V) S Figure. Body iode Forward Volage Variaion wih Curren and Temperaure CAPACITANCE (pf) 5 f = MHz V = V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) I =.A V S = V V V V, RAIN TO SOURCE VOLTAGE (V) S Figure 9. Capaciance Characerisics. 5 Q g, GATE CHARGE (nc) Figure. Gae Charge Characerisics. V IN V R L V OUT d(on) on r 9% d(off) off 9% f V V OUT % R GEN G UT % 9% INVERTE S V IN 5% 5% % PULSE WITH Figure. Swiching Tes Circui Figure. Swiching Waveforms NS9959.SAM

6 Typical Elecrical Characerisics (coninued) g FS, TRANSCONUCTANCE (SIEMENS) V S = 5V T = -55 C 5 C 5 C 5 I, RAIN CURRENT (A) I, RAIN CURRENT (A) RS(ON) LIMIT V = V SINGLE PULSE T A = 5 C ms C s V, RAIN-SOURCE VOLTAGE (V) S ms Figure. Transconducance Variaion wih rain Curren. Figure. Maximum Safe Operaing Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse....., TIME (sec) P(pk) R θa () = r() * R θa R = See Noe c θa T - T = P * R () A θa uy Cycle, = / Figure 5. Transien Thermal Response Curve. Noe: Thermal characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. NS9959.SAM

7 TRAEMARKS The following are regisered and unregisered rademarks Fairchild Semiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ISCLAIMER ACEx Boomless CoolFET CROSSVOLT E CMOS TM FACT FACT Quie Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quie Series SuperSOT - SuperSOT - SuperSOT - SyncFET TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT STATUS EFINITIONS efiniion of Terms. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc Saus efiniion Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. Specificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only. Rev. E