NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor

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Colin McCoy
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NS99A ual N & P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These dual N- and P-channel enhancemen mode power field effec ransisors are produced using ON Semiconducors

This very high densiy process is especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes.

1 NS99A ual N & P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These dual N- and P-channel enhancemen mode power field effec ransisors are produced using ON Semiconducors proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed. N-Channel.7A, V, R S(ON) =V. P-Channel -.9A, -V, R S(ON) =-V. High densiy cell design or exremely low R S(ON). High power and curren handling capabiliy in a widely used surface moun package. ual (N & P-Channel) MOSFET in surface moun package. 7 Absolue Maximum Raings T A = C unless oherwise noed Symbol Parameer N-Channel P-Channel Unis S rain-source Volage - V S Gae-Source Volage ± ± V I rain Curren - Coninuous (Noe a) ±.7 ±.9 A - Pulsed ± ± P Power issipaion for ual Operaion W Power issipaion for Single Operaion (Noe a). (Noe b) (Noe c).9,t STG Operaing and Sorage Temperaure Range - o C THERMAL CHARACTERISTICS R Thermal Resisance, Juncion-o-Ambien (Noe a) 7 C/W R Thermal Resisance, Juncion-o-Case (Noe ) C/W θjc 997 Semiconducor Componens Indusries, LLC. Sepember-7, Rev. Publicaion Order Number: NS99A/

2 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Type Min Typ Max Unis OFF CHARACTERISTICS BS rain-source Breakdown Volage = V, I = µa N-Ch V = V, I = - µa P-Ch - V I SS Zero Gae Volage rain Curren = V, = V N-Ch µa = C µa = - V, = V P-Ch - µa = C - µa I SF Gae - Body Leakage, Forward = V, = V All na I SR Gae - Body Leakage, Reverse = - V, = V All - na ON CHARACTERISTICS (Noe ) (h) Gae Threshold Volage =, I = µa N-Ch.7. V = C.7.. =, I = - µa P-Ch = C R S(ON) Saic rain-source On-Resisance = V, I =. A N-Ch.. Ω = C.. =. V, I =. A.. = C.. = - V, I = -. A P-Ch.. = C.. = -. V, I = -. A.7. = C.. I (on) On-Sae rain Curren = V, = V N-Ch A = - V, = - V P-Ch - g FS Forward Transconducance = V, I =.7 A N-Ch S YNAMIC CHARACTERISTICS = - V, I = -.9 A P-Ch C iss Inpu Capaciance N-Channel N-Ch pf = V, = V, f =. MHz P-Ch C oss Oupu Capaciance N-Ch pf P-Channel P-Ch = - V, = V, C rss Reverse Transfer Capaciance f =. MHz N-Ch pf P-Ch

3 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Type Min Typ Max Unis SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time N-Channel N-Ch ns V = V, I = A, P-Ch 9 V GEN = V, R GEN = Ω r Turn - On Rise Time N-Ch ns P-Channel P-Ch (off) Turn - Off elay Time V = - V, I = - A, V GEN = - V, R GEN = Ω N-Ch ns P-Ch 9 f Turn - Off Fall Time N-Ch ns P-Ch Q g Toal Gae Charge N-Channel N-Ch 9. 7 nc = V, I =.7 A, = V P-Ch Q gs Gae-Source Charge N-Ch. nc P-Channel P-Ch. = - V, Q gd Gae-rain Charge I = -.9 A, = - V N-Ch. nc P-Ch. RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Coninuous rain-source iode Forward Curren N-Ch. A V S rain-source iode Forward Volage P-Ch -. = V, I S =. A (Noe ) N-Ch.. V = V, I S = -. A (Noe ) P-Ch rr Reverse Recovery Time = V, I F =. A, di F /d = A/µs N-Ch 7 ns Noes: = V, I F = -. A, di F /d = A/µs P-Ch. R is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = T A = T A = RθJ A() I R θj C +R () R S(ON ) TJ θca() Typical R for single device operaion using he board layous shown below on."x" FR- PCB in a sill air environmen: a. 7 o C/W when mouned on a. in pad of oz cpper. b. o C/W when mouned on a. in pad of oz cpper. c. o C/W when mouned on a. in pad of oz cpper. a b c Scale : on leer size paper. Pulse Tes: Pulse Widh < µs, uy Cycle <.%.

4 Typical Elecrical Characerisics: N-Channel I, RAIN-SOURCE CURRENT (A) V =V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V =.V....., RAIN-SOURCE VOLTAGE (V) Figure. N-Channel On-Region Characerisics.. 9 I, RAIN CURRENT (A) Figure. N-Channel On-Resisance Variaion wih Gae Volage and rain Curren.. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE... I =.7A = V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. = V T = C J C - C , JUNCTION TEMPERATURE ( C). 9 I, RAIN CURRENT (A) Figure. N-Channel On-Resisance Variaion wih Temperaure. Figure. N-Channel On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) = V T = - C J C C V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE = I = µa, GATE TO SOURCE VOLTAGE (V) Figure. N-Channel Transfer Characerisics , JUNCTION TEMPERATURE ( C) Figure. N-Channel Gae Threshold Variaion wih Temperaure.

5 S SS Typical Elecrical Characerisics: N-Channel (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE....9 I = µa I, REVERSE RAIN CURRENT (A)... = V T = C J C - C , JUNCTION TEMPERATURE ( C) Figure 7. N-Channel Breakdown Volage Variaion wih Temperaure V S, BOY IOE FORWAR VOLTAGE (V) Figure. N-Channel Body iode Forward Volage Variaion wih Curren and Temperaure. CAPACITANCE (pf) f = MHz = V C iss C oss C rss, GATE-SOURCE VOLTAGE (V) I =.7A = V V V... V S, RAIN TO SOURCE VOLTAGE (V) Figure 9. N-Channel Capaciance Characerisics. Q g, GATE CHARGE (nc) Figure. N-Channel Gae Charge Characerisics. g, TRANSCONUCTANCE (SIEMENS) FS V =V S T = - C J C C I, RAIN CURRENT (A) Figure. N-Channel Transconducance Variaion wih rain Curren and Temperaure.

6 Typical Elecrical Characerisics: P-Channel (coninued) I, RAIN-SOURCE CURRENT (A) V = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V = -.V V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) - - Figure. P-Channel On-Region Characerisics. Figure. P-Channel On-Resisance Variaion wih Gae Volage and rain Curren.. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE... I = -.9A = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. V = -V T = C J C - C , JUNCTION TEMPERATURE ( C) I, RAIN CURRENT (A) - - Figure. P-Channel On-Resisance Variaion wih Temperaure. Figure. P-Channel On-Resisance Variaion wih rain Curren and Temperaure. -. I, RAIN CURRENT (A) V = -V S T = - C J C C V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE..9. V = V S I = -µa V, GATE TO SOURCE VOLTAGE (V) T, JUNCTION TEMPERATURE ( C) J Figure. P-Channel Transfer Characerisics. Figure 7. P-Channel Gae Threshold Variaion wih Temperaure.

7 FS S SS Typical Elecrical Characerisics: P-Channel (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -µa T J, JUNCTION TEMPERATURE ( C) Figure. P-Channel Breakdown Volage Variaion wih Temperaure. -I, REVERSE RAIN CURRENT (A)... = V T = C J C - C V S, BOY IOE FORWAR VOLTAGE (V) Figure 9. P-Channel Body iode Forward Volage Variaion wih Curren and Temperaure. CAPACITANCE (pf) f = MHz = V C iss C oss C rss -, GATE-SOURCE VOLTAGE (V) I = -.9A V = -V S -V -V... -V S, RAIN TO SOURCE VOLTAGE (V) Figure. P-Channel Capaciance Characerisics. Q g, GATE CHARGE (nc) Figure. P-Channel Gae Charge Characerisics. g, TRANSCONUCTANCE (SIEMENS) V = -V S - I T = - C J C - -, RAIN CURRENT (A) C Figure. P-Channel Transconducance Variaion wih rain Curren and Temperaure

8 Typical Thermal Characerisics: N & P-Channel. STEAY-STATE POWER ISSIPATION (W). b c Toal Power for ual Operaion a Power for Single Operaion."x" FR- Board o T A = C Sill Air..... oz COPPER MOUNTING PA AREA (in ) I, STEAY-STATE RAIN CURRENT (A) a b c."x" FR- Board o T A = C Sill Air = V..... oz COPPER MOUNTING PA AREA (in ) Figure. SO- ual Package Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. Figure. N-Ch Maximum Seady- Sae rain Curren versus Copper Mouning Pad Area. I, STEAY-STATE RAIN CURRENT (A) c b."x" FR- Board o T A = C Sill Air = -V..... oz COPPER MOUNTING PA AREA (in ) Figure. P-Ch Maximum Seady- Sae rain Curren versus Copper Mouning Pad Area. a I, RAIN CURRENT (A)... RS(ON) LIMIT V = V SINGLE PULSE R = See Noe c T = C A s s C...., RAIN-SOURCE VOLTAGE (V) ms ms us ms Figure. N-Channel Maximum Safe Operaing Area. -I, RAIN CURRENT (A)... RS(ON) LIMIT V = -V SINGLE PULSE R = See Noe c T = C A s C ms.... -, RAIN-SOURCE VOLTAGE (V) s ms ms us Figure 7. P-Channel Maximum Safe Operaing Area.

9 Typical Thermal Characerisics: N & P-Channel. =. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse....., TIME (sec) P(pk) R () = r() * R R = See Noe c T J - T = P * R () A uy Cycle, = / Figure. Transien Thermal Response Curve. Noe: Thermal characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. V IN V R L d(on) on r 9% d(off) off 9% f OUT V OUT % R GEN G UT V % 9% S V IN % % % PULSE WITH Figure 9. N or P-Channel Swiching Tes Circui. Figure. N or P-Channel Swiching Waveforms. 9

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1.3 A, 20 V. R DS(ON) = 25 C unless otherwise noted. Symbol Parameter NDS331N Units V DSS. Drain-Source Voltage 20 V V GSS

1.3 A, 20 V. R DS(ON) = 25 C unless otherwise noted. Symbol Parameter NDS331N Units V DSS. Drain-Source Voltage 20 V V GSS NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel logic level enhancemen mode power field effec ransisors are produced using ON Semiconducor's proprieary,