MJE5740, MJE5742. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS

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is a Preferred Device NPN Silicon Power Darlingon Transisors The and Darlingon ransisors are designed for highvolage power swiching in inducive circuis.

1 is a Preferred Device NPN Silicon Power Darlingon Transisors The and Darlingon ransisors are designed for highvolage power swiching in inducive circuis. Feaures PbFree Packages are Available* Applicaions Small Engine Igniion Swiching Regulaors Inverers Solenoid and Relay Drivers Moor Conrols POWER DARLINGTON TRANSISTORS 8 AMPERES 4 VOLTS 8 WATTS MAXIMUM RATINGS CollecorEmier Volage CollecorEmier Volage Raing Symbol Value Uni V CEO(sus) 4 V CEV 6 8 EmierBase Volage V EB 8 Collecor Curren Base Curren Coninuous Peak (Noe ) Coninuous Peak (Noe ) Toal Device T C = C Derae above C Toal Device T C = C Derae above C Operaing and Sorage Juncion Temperaure Range THERMAL CHARACTERISTICS I C 8 I CM 6 I B. I BM P D 6 P D 8 64 Adc Adc W W/ C W W/ C T J, T sg 6 o + C Characerisics Symbol Max Uni Thermal Resisance, JuncionoCase R JC. C/W Thermal Resisance, JuncionoAmbien R JA 6. C/W Maximum Lead Temperaure for Soldering Purposes /8 from Case for Seconds T L 7 C Maximum raings are hose values beyond which device damage can occur. Maximum raings applied o he device are individual sress limi values (no normal operaing condiions) and are no valid simulaneously. If hese limis are exceeded, device funcional operaion is no implied, damage may occur and reliabiliy may be affeced.. Pulse Tes: Pulse Widh = ms, Duy Cycle %. *For addiional informaion on our PbFree sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. TOAB CASE A9 STYLE MJE74x G A Y WW BASE COLLECTOR,4 EMITTER MARKING DIAGRAM MJE74xG AY WW = Device Code x = or = PbFree Package = Assembly Locaion = Year = Work Week ORDERING INFORMATION See deailed ordering and shipping informaion in he package dimensions secion on page of his daa shee. Preferred devices are recommended choices for fuure use and bes overall value. Semiconducor Componens Indusries, LLC, 8 Sepember, 8 Rev. 7 Publicaion Order Number: /D

2 ELECTRICAL CHARACTERISTICS (T C = C unless oherwise noed) Characerisic Symbol Min Typ Max Uni OFF CHARACTERISTICS (Noe ) CollecorEmier Susaining Volage V CEO(sus) (I C = ma, I B = ) 4 Collecor Cuoff Curren (V CEV = Raed Value, V BE(off) =. ) I (V CEV = Raed Value, V BE(off) =., T C CEV madc = C) ÎÎ Emier Cuoff Curren (V EB = 8, I C = ) I EBO 7 madc SECOND BREAKDOWN Second Breakdown Collecor Curren wih Base Forward Biased I S/b Î See Figure 6 Clamped Inducive SOA wih Base Reverse Biased RBSOA Î See Figure 7 ON CHARACTERISTICS (Noe ) DC Curren Gain (I C =. Adc, V CE = ) h FE (I C = 4 Adc, V CE = ) 4 CollecorEmier Sauraion Volage (I C = 4 Adc, I B =. Adc) V CE(sa) CollecorEmier Sauraion Volage (I C = 8 Adc, I B =.4 Adc) CollecorEmier Sauraion Volage (I C = 4 Adc, I B =. Adc, T C = C). BaseEmier Sauraion Volage (I C = 4 Adc, I B =. Adc) V BE(sa) BaseEmier Sauraion Volage (I C = 8 Adc, I B =.4 Adc) BaseEmier Sauraion Volage (I C = 4 Adc, I B =. Adc, T C.. = C).4 ÎÎ Diode Forward Volage (Noe ) (I F = Adc) V f. SWITCHING CHARACTERISTICS Typical Resisive Load (Table ) ÎÎ Delay Time Î d.4 s ÎÎ Î Rise Time (V Î CC =, I C(pk) = 6 A r. s ÎÎ I B = I B =. A, p = s, Î Sorage Time Duy Cycle %) Î s 8 s ÎÎ Î Fall Time f s Inducive Load, Clamped (Table ) Volage Sorage Time Î (I C(pk) = 6 A, V CE(pk) = sv 4 s ÎÎ Î Crossover Time I B =.6 A, V BE(off) = ). Pulse Tes: Pulse Widh s, Duy Cycle = %.. The inernal CollecoroEmier diode can eliminae he need for an exernal diode o clamp inducive loads. Tess have shown ha he Forward Recovery Volage (V f ) of his diode is comparable o ha of ypical fas recovery recifiers. c s ORDERING INFORMATION G G Device Package Shipping TO TO (PbFree) TO TO (PbFree) Unis / Rail

3 TYPICAL CHARACTERISTICS I C(pk) V CE(pk) POWER DERATING FACTOR (%) THERMAL DERATING SECOND BREAKDOWN DERATING I C V CE IB 9% I B sv 9% V CE(pk) 9% I C rv fi c % V CE(pk) % I C(pk) i % I C T C, CASE TEMPERATURE ( C) Figure. Power Deraing TIME Figure. Inducive Swiching Measuremens.4 hfe, DC CURRENT GAIN. C V CE = V + C - C Figure. DC Curren Gain VBE, BASE-EMITTER VOLTAGE (VOLTS) h FE = - C + C + C.. Figure 4. BaseEmier Volage

4 Table. Tes Condiions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS P W DUTY CYCLE % r, f ns 68. F k N49 NOTE:. F 7 PW and V CC Adjused for Desired I C R B Adjused for Desired I B + Vk N49 N k N49 N9 47 / W + V MJE R B I B MJE -V BE(off) T.U.T. V CC L I C MR86 * V clamp. k *SELECTED FOR kv V CE R B D TUT - 4 V +V CC R C SCOPE CIRCUIT VALUES COIL DATA: FERROXCUBE CORE #666 FULL BOBBIN (~6 TURNS) #6 GAP FOR H/ A L coil = H V CC = V V CE(pk) = I C(pk) = 6 A V CC = V D = N8 OR EQUIV. TEST WAVEFORMS I C V CE I C(pk) TIM E f V CE OR V clamp OUTPUT WAVEFORMS f CLAMPED ADJUSTED TO OBTAIN I C L coil (I C pk ) V CC L coil (I C pk ) V clamp TEST EQUIPMENT SCOPE-TEKTRONICS 47 OR EQUIVALENT + V s - 9. V r, f < ns DUTY CYCLE = % R B AND R C ADJUSTED FOR DESIRED I B AND I C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) h FE = - C + C + C.. Figure. Inducive Swiching Measuremens 4

5 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are wo limiaions on he power handling abiliy of a ransisor: average juncion emperaure and second breakdown. Safe operaing area curves indicae I C V CE limis of he ransisor ha mus be observed for reliable operaion; i.e., he ransisor mus no be subjeced o greaer dissipaion han he curves indicae. The daa of Figure 6 is based on T C = C; T J(pk) is variable depending on power level. Second breakdown pulse limis are valid for duy cycles o % bu mus be deraed when T C C. Second breakdown limiaions do no derae he same as hermal limiaions. Allowable curren a he volages shown on Figure 6 may be found a any case emperaure by using he appropriae curve on Figure. REVERSE BIAS For inducive loads, high volage and high curren mus be susained simulaneously during urnoff, in mos cases, wih he base o emier juncion reverse biased. Under hese condiions he collecor volage mus be held o a safe level a or below a specific value of collecor curren. This can be accomplished by several means such as acive clamping, RC snubbing, load line shaping, ec. The safe level for hese devices is specified as Reverse Bias Safe Operaing Area and represens he volagecurren condiion allowable during reverse biased urnoff. This raing is verified under clamped condiions so ha he device is never subjeced o an avalanche mode. Figure 7 gives he complee RBSOA characerisics. The Safe Operaing Area figures shown in Figures 6 and 7 are specified raings for hese devices under he es condiions shown ms s BONDING WIRE LIMIT THERMAL LIMIT dc (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED V CEO s ms IC, COLLECTOR CURRENT (AMPS) V BE(off) V T J = C. 4 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 4 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Forward Bias Safe Operaing Area Figure 7. Reverse Bias Safe Operaing Area RESISTIVE SWITCHING PERFORMANCE, TIME ( s) μ d r Figure 8. TurnOn Time V CC = V I B = I B I C /I B =, TIME ( s) μ s f Figure 9. TurnOff Time VCC = V I B = I B I C /I B =

6 PACKAGE DIMENSIONS TOAB CASE A9 ISSUE AA H Q Z L V G B 4 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U....7 V Z STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR ON Semiconducor and are regisered rademarks of Semiconducor Componens Indusries, LLC (SCILLC). SCILLC reserves he righ o make changes wihou furher noice o any producs herein. SCILLC makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does SCILLC assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Typical parameers which may be provided in SCILLC daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. SCILLC does no convey any license under is paen righs nor he righs of ohers. SCILLC producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he SCILLC produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use SCILLC producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold SCILLC and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha SCILLC was negligen regarding he design or manufacure of he par. SCILLC is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor P.O. Box 6, Denver, Colorado 87 USA Phone: 677 or Toll Free USA/Canada Fax: 6776 or Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: 8898 Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive /D

MJE5740G, MJE5742G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS

MJE5740G, MJE5742G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS MJE74G, MJE74G NPN Silicon Power Darlingon Transisors The MJE74G and MJE74G Darlingon ransisors are designed for highvolage power swiching in inducive circuis. Feaures These Devices are PbFree and are