PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

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1 , is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value Unit V CEO 3 4 V CBO 6 2 BASE 1 EMITTER Emitter-Base Voltage V EBO Collector Current Continuous I C 6 madc Total Device T A = 25 C Derate above 25 C Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D P D mw mw/ C W mw/ C T J, T stg 55 to +1 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case R JA 2 C/W R JC 83.3 C/W TO92 CASE 29 STYLE 1 MARKING DIAGRAM PN 222x YWW PN222 = Device Code x = 2 or A Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 25 January, 25 Rev. 1 1 Publication Order Number: /D

2 , ORDERING INFORMATION Device Package Shipping TO92 Units / Box TO92 Units / Box G TO92 (PbFree) Units / Box RLRA TO92 2 Tape & Reel RLRAG TO92 (PbFree) 2 Tape & Reel RLRM TO92 2 / Ammo Pack RLRP TO92 2 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C = Adc, I E = ) EmitterBase Breakdown Voltage (I E = Adc, I C = ) Collector Cutoff Current (V CE = 6, V EB(off) = 3. ) Collector Cutoff Current (V CB =, I E = ) (V CB = 6, I E = ) (V CB =, I E =, T A = 125 C) (V CB =, I E =, T A = 125 C) Emitter Cutoff Current (V EB = 3., I C = ) Base Cutoff Current (V CE = 6, V EB(off) = 3. ) V (BR)CEO 3 4 V (BR)CBO 6 V (BR)EBO I CEX nadc I CBO.1.1 Adc I EBO nadc I BL 2 nadc ON CHARACTERISTICS DC Current Gain (I C =.1 madc, V CE = ) (I C = 1. madc, V CE = ) (I C = madc, V CE = ) (I C = madc, V CE =, T A = 55 C) only (I C = 1 madc, V CE = ) (Note 1) (I C = 1 madc, V CE = 1. ) (Note 1) (I C = madc, V CE = ) (Note 1) h FE CollectorEmitter Saturation Voltage (Note 1) (I C = 1 madc, I B = 15 madc) (I C = madc, I B = madc) V CE(sat) BaseEmitter Saturation Voltage (Note 1) (I C = 1 madc, I B = 15 madc) (I C = madc, I B = madc) 1. Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. V BE(sat)

3 , ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) (I C = 2 madc, V CE = 2, f = MHz) f T 2 3 MHz Output Capacitance (V CB =, I E =, f = 1. MHz) C obo 8. pf Input Capacitance (V EB =.5, I C =, f = 1. MHz) C ibo 3 25 pf Input Impedance (I C = 1. madc, V CE =, f = 1. khz) (I C = madc, V CE =, f = 1. khz) h ie k Voltage Feedback Ratio (I C = 1. madc, V CE =, f = 1. khz) (I C = madc, V CE =, f = 1. khz) h re X 4 SmallSignal Current Gain (I C = 1. madc, V CE =, f = 1. khz) (I C = madc, V CE =, f = 1. khz) h fe 3 3 Output Admittance (I C = 1. madc, V CE =, f = 1. khz) (I C = madc, V CE =, f = 1. khz) h oe mhos Collector Base Time Constant (I E = 2 madc, V CB = 2, f = 31.8 MHz) Noise Figure (I C = Adc, V CE =, R S = 1. k, f = 1. khz) rb C c 1 ps NF 4. db SWITCHING CHARACTERISTICS ( only) Delay Time (V CC = 3, V BE(off) =.5, t d ns Rise Time I C = 1 madc, I B1 = 15 madc) (Figure 1) t r 25 ns Storage Time (V CC = 3, I C = 1 madc, t s 225 ns Fall Time I B1 = I B2 = 15 madc) (Figure 2) t f 6 ns 2. f T is defined as the frequency at which h fe extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 3 V + 3 V +16 V 1. to s, DUTY CYCLE 2.% V 1. to s, DUTY CYCLE 2.% 2 2 V < 2 ns 1 k C S * < pf 14 V < 2 ns 1 k 1N914 C S * < pf Scope rise time < 4 ns 4 V *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. TurnOn Time Figure 2. TurnOff Time 3

4 , hfe, DC CURRENT GAIN T J = 125 C 25 C 55 C V CE = 1. V V CE = V k Figure 3. DC Current Gain VCE, COLLECTOREMITTER VOLTAGE (VOLTS) I C = 1. ma ma 1 ma ma I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region t, TIME (ns) t V CC = 3 V t V EB(off) = 2. V t V EB(off) = Figure 5. TurnOn Time I C /I B = 3 t, TIME (ns) t s = t s 1/8 t f t f Figure 6. TurnOff Time V CC = 3 V I C /I B = I B1 = I B2 4

5 , NF, NOISE FIGURE (db) I C = 1. ma, R S = 1 A, R S = 2 A, R S = 2. k A, R S = 4. k R S = OPTIMUM R S = SOURCE R S = RESISTANCE NF, NOISE FIGURE (db) f = 1. khz I C = A A A 1. ma f, FREQUENCY (khz) 2 1. k 2. k 5. k k 2 k k k R S, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects CAPACITANCE (pf) C eb C cb REVERSE VOLTAGE (VOLTS) ft, CURRENTGAIN BANDWIDTH PRODUCT (MHz) V CE = 2 V Figure 9. Capacitances Figure. CurrentGain Bandwidth Product R VC for V CE(sat) V, VOLTAGE (VOLTS).6.4 V I C /I B = V V CE = V 1. V COEFFICIENT (mv/ C) V I C /I B = k Figure 11. On Voltages R VB for V BE Figure 12. Temperature Coefficients 5

6 , PACKAGE DIMENSIONS TO92 TO226AA CASE 2911 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. /D

7 This datasheet has been download from: Datasheets for electronics components.

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