MJE18006G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS

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SWITCHMODE NPN Bipolar Power Transisor For Swiching Power Supply Applicaions The has an applicaions specific saeofhear die designed for use in V lineoperaed SWITCHMODE Power supplies and elecronic

1 SWITCHMODE NPN Bipolar Power Transisor For Swiching Power Supply Applicaions The has an applicaions specific saeofhear die designed for use in V lineoperaed SWITCHMODE Power supplies and elecronic ligh ballass. Feaures Improved Efficiency Due o Low Base Drive Requiremens: High and Fla DC Curren Gain h FE Fas Swiching No Coil Required in Base Circui for TurnOff (No Curren Tail) Tigh Parameric Disribuions are Consisen LooLo Sandard TO These Devices are PbFree and are RoHS Complian* MAXIMUM RATINGS Raing Symbol Value Uni CollecorEmier Susaining Volage V CEO 5 Vdc CollecorEmier Breakdown Volage V CES Vdc EmierBase Volage V EBO 9. Vdc Collecor Curren Base Curren Coninuous Peak (Noe ) Coninuous Peak (Noe ) Toal Device T C = 5 C Derae above 5 C I C 6. I CM 5 I B. I BM 8. P D.8 Adc Adc W W/ C Operaing and Sorage Temperaure T J, T sg 65 o 5 C THERMAL CHARACTERISTICS Characerisics Symbol Max Uni Thermal Resisance, JuncionoCase R JC.5 C/W Thermal Resisance, JuncionoAmbien R JA 6.5 C/W Maximum Lead Temperaure for Soldering Purposes /8 from Case for 5 Seconds T L 6 C Sresses exceeding Maximum Raings may damage he device. Maximum Raings are sress raings only. Funcional operaion above he Recommended Operaing Condiions is no implied. Exended exposure o sresses above he Recommended Operaing Condiions may affec device reliabiliy.. Pulse Tes: Pulse Widh = 5 ms, Duy Cycle %. POWER TRANSISTOR 6. AMPERES VOLTS WATTS TOAB CASE A9 STYLE MARKING DIAGRAM AY WW A = Assembly Locaion Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping TO (PbFree) 5 Unis / Rail *For addiional informaion on our PbFree sraegy and soldering deails, please download he ON Semiconducor Soldering and Mouning Techniques Reference Manual, SOLDERRM/D. Semiconducor Componens Indusries, LLC, April, Rev. 7 Publicaion Order Number: MJE86/D

2 ELECTRICAL CHARACTERISTICS (T C = 5 C unless oherwise specified) Characerisic Symbol Min Typ Max Uni OFF CHARACTERISTICS CollecorEmier Susaining Volage C = ma, L = 5 mh) V CEO(sus) 5 Vdc Collecor Cuoff Curren (V CE = Raed V CEO, I B = ) I CEO Adc Collecor Cuoff Curren (V CE = Raed V CES, V EB = ) I (T C = 5 C) CES Adc 5 Collecor Cuoff Curren (V CE = 8 V, V EB = ) (T C = 5 C) Emier Cuoff Curren (V EB = 9. Vdc, I C = ) I EBO Adc ON CHARACTERISTICS BaseEmier Sauraion Volage C =. Adc, I B =. Adc) V BaseEmier Sauraion Volage C =. Adc, I B =.6 Adc) BE(sa) Vdc CollecorEmier Sauraion Volage V CE(sa) Vdc C =. Adc, I B =. Adc).5.6 (T C = 5 C).7.65 C =. Adc, I B =.6 Adc) (T C.5.7 ÎÎ = 5 C)..8 DC Curren Gain C =.5 Adc, V CE = 5. Vdc) h FE (T C = 5 C) DC Curren Gain C =. Adc, V CE =. Vdc) 6. (T C = 5 C) DC Curren Gain C =. Adc, V CE =. Vdc) (T C = 5 o 5 C) 7 DC Curren Gain C = madc, V CE = 5. Vdc) DYNAMIC CHARACTERISTICS Curren Gain Bandwidh C =.5 Adc, V CE = Vdc, f =. MHz) MHz Oupu Capaciance (V CB = Vdc, I E =, f =. MHz) C ob 75 pf Inpu Capaciance (V EB = 8. V) C ib 5 pf Î Dynamic Sauraion Volage: Î C =. Adc. s Î (T C V CE(dsa) 5.5 = 5 C) Î Deermined. s and Î I B = madc V. s respecively afer V Î rising I B reaches 9% of Î CC = V). s (T C = 5 C). 7. final I Î B Î (see Figure 8) C =. Adc. s Î (T C 9.5 Î I B =.6 Adc = 5 C).5 V Î CC = V) ÎÎ. s (T C = 5 C). 7.5 SWITCHING CHARACTERISTICS: Resisive Load (D.C. %, Pulse Widh = s) TurnOn Time C =. Adc, I B =.6 Adc, I B =.5 Adc, V CC = V) Î (T C = 5 C) on 9 8 ns TurnOff Time off ÎÎ (T C = 5 C) ÎÎ.7.5. ÎÎ s TurnOn Time C =. Adc, I B =. Adc, I B =.65 Adc, V CC = V) Î (T C = 5 C) on ns TurnOff Time off ÎÎ (T C = 5 C)..5.5 s SWITCHING CHARACTERISTICS: Inducive Load (V clamp = V, V CC = 5 V, L = H) Fall Time C =.5 Adc, I B =. Adc, I B =.65 Adc) Î (T C = 5 C) fi 8 ns Sorage Time si.5.5 s (T Î C = 5 C).9 ÎÎ Crossover Time (T C = 5 C) c 5 ns Fall Time Î C =. Adc, I B =.6 Adc, fi 85 5 ns I Î B =.5 Adc) (T C = 5 C) ÎÎ Sorage Time (T C = 5 C) si s Crossover Time ns. Proper srike and creepage disance mus be provided. (T C = 5 C) f T c

3 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN T J = 5 C T J = 5 C T J = - C V CE = V T J = 5 C h FE, DC CURRENT GAIN T J = 5 C T J = - C V CE = 5 V.. Figure. DC Curren Vol.. Figure. DC Curren 5 Vols T J = 5 C V CE, VOLTAGE (VOLTS).5.5 I C = A A A 5 A 6 A V CE, VOLTAGE (VOLTS). I C /I B =.. I B, BASE CURRENT (AMPS).. T J = 5 C T J = 5 C. I C COLLECTOR CURRENT (AMPS) Figure. Collecor Sauraion Region Figure. CollecorEmier Sauraion Volage V BE, VOLTAGE (VOLTS) T J = 5 C T J = 5 C I C /I B =. C, CAPACITANCE (pf) C ib V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) C ob T J = 5 C f = MHz Figure 5. BaseEmier Sauraion Region Figure 6. Capaciance

4 TYPICAL SWITCHING CHARACTERISTICS B = I C / for all swiching) 5 I B(off) = I C / V CC = V PW = s T J = 5 C 5 T J = 5 C T J = 5 C I B(off) = I C / V CC = V PW = s, TIME (ns) I C /I B = T J = 5 C, TIME (ns) 5 5 I C /I B = Figure 7. Resisive Swiching, on Figure 8. Resisive Swiching, off, TIME (ns) T J = 5 C T I C /I B = J = 5 C 5 6 I C COLLECTOR CURRENT (AMPS) I B(off) = I C / V CC = 5 V V Z = V L C = H si, STORAGE TIME (ns) T J = 5 C T J = 5 C I C = A I B(off) = I C / V CC = 5 V V Z = V L C = H I C =. A h FE, FORCED GAIN Figure 9. Inducive Sorage Time, si Figure. Inducive Sorage Time, si (h FE ) 5 5 c, TIME (ns) 5 5 fi c, TIME (ns) 5 I B(off) = I C / V CC = 5 V V Z = V L C = H fi I B(off) = I C / V CC = 5 V 5 V Z = V T J = 5 C T J = 5 C L C = H T J = 5 C T J = 5 C Figure. Inducive Swiching, c and fi Figure. Inducive Swiching, c and fi I C /I B =

5 TYPICAL SWITCHING CHARACTERISTICS B = I C / for all swiching) fi, FALL TIME (ns) I C = A I B(off) = I C / V CC = 5 V V Z = V L C = H T J = 5 C T J = 5 C I C =. A h FE, FORCED GAIN Figure. Inducive Fall Time T C, CROSSOVER TIME (ns) I C =. A I C = A I B(off) = I C / V CC = 5 V V Z = V L C = H T J = 5 C T J = 5 C h FE, FORCED GAIN Figure. Inducive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION I C, COLLECTOR CURRENT (AMPS). DC (MJE86) 5 ms ms s s EXTENDED SOA POWER DERATING FACTOR,,8,6,, THERMAL DERATING SECOND BREAKDOWN DERATING. V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Forward Bias Safe Operaing Area, T C, CASE TEMPERATURE ( C) Figure 7. Forward Bias Power Deraing V BE(off) = V -, 5 V T C 5 C I C /I B L C = 5 H - 5 V 6 8 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Reverse Bias Swiching Safe Operaing Area There are wo limiaions on he power handling abiliy of a ransisor: average juncion emperaure and second breakdown. Safe operaing area curves indicae I C V CE limis of he ransisor ha mus be observed for reliable operaion; i.e., he ransisor mus no be subjeced o greaer dissipaion han he curves indicae. The daa of Figure 5 is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limis are valid for duy cycles o % bu mus be deraed when T C 5 C. Second breakdown limiaions do no derae he same as hermal limiaions. Allowable curren a he volages shown in Figure 5 may be found a any case emperaure by using he appropriae curve on Figure 7. T J(pk) may be calculaed from he daa in Figure. A any case emperaures, hermal limiaions will reduce he power ha can be handled o values less han he limiaions imposed by second breakdown. For inducive loads, high volage and curren mus be susained simulaneously during urnoff wih he baseoemier juncion reversebiased. The safe level is specified as a reversebiased safe operaing area (Figure 6). This raing is verified under clamped condiions so ha he device is never subjeced o an avalanche mode. 5

6 VOLTS 5 V CE dyn s dyn s - - 9% I B - s - s I B -5 TIME Figure 8. Dynamic Sauraion Volage Measuremens I C 9% I C fi si 6 c % I C 5 V CLAMP I B % V CLAMP 9% I B TIME Figure 9. Inducive Swiching Measuremens +5 V F 5 W W MTP8P F V CE PEAK I C PEAK + V COMMON -V off MPF9 5 MPF9 5 F 5 W MUR5 MJE MTP8P MTPN R B I ou A R B F V CE I B I B V(BR)CEO(sus) L = mh RB = V CC = VOLTS I C (pk) = ma I B INDUCTIVE SWITCHING L = H RB = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B RBSOA L = 5 H RB = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B Table. Inducive Load Swiching Drive Circui TYPICAL THERMAL RESPONSE r(), TRANSIENT THERMAL RESISTANCE (NORMALIZED). D = SINGLE PULSE R JC () = r() R JC R JC =.5 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T J(pk) - T C = P (pk) R JC ()..., TIME (ms) P (pk) DUTY CYCLE, D = / Figure. Typical Thermal Response (Z JC ()) for MJE86 6

7 PACKAGE DIMENSIONS TOAB CASE A9 ISSUE AF H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q...5. R S T U V Z STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR SWITCHMODE is a rademark of Semiconducor Componens Indusries, LLC. ON Semiconducor and are regisered rademarks of Semiconducor Componens Indusries, LLC (SCILLC). SCILLC reserves he righ o make changes wihou furher noice o any producs herein. SCILLC makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does SCILLC assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Typical parameers which may be provided in SCILLC daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. SCILLC does no convey any license under is paen righs nor he righs of ohers. SCILLC producs are no designed, inended, or auhorized for use as componens in sysems inended for surgical implan ino he body, or oher applicaions inended o suppor or susain life, or for any oher applicaion in which he failure of he SCILLC produc could creae a siuaion where personal injury or deah may occur. Should Buyer purchase or use SCILLC producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold SCILLC and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha SCILLC was negligen regarding he design or manufacure of he par. SCILLC is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Lieraure Disribuion Cener for ON Semiconducor P.O. Box 56, Denver, Colorado 87 USA Phone: or 886 Toll Free USA/Canada Fax: or 8867 Toll Free USA/Canada orderli@onsemi.com N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: 79 9 Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive MJE86/D

8 Mouser Elecronics Auhorized Disribuor Click o View Pricing, Invenory, Delivery & Lifecycle Informaion: ON Semiconducor: MJE86

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W DH (NPN), D5H (PNP) Complemenary Silicon Power Transisors These complemenary silicon power ransisors are designed for highspeed swiching applicaions, such as swiching regulaors and high frequency inverers.