NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
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1 NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low onstate voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are PbFree Devices 2 A, 2 V V CEsat = 2. V E off =.4 mj C Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS G E Rating Symbol Value Unit Collectoremitter T J = 2 C V CES 2 V Collector TC = 2 TC = C Pulsed collector current, T pulse limited by T Jmax, s Pulse, V GE = V I C 4 2 A I CM 2 A G C E TO247 CASE 34AL Diode forward TC = 2 TC = C I F 4 2 A MARKING DIAGRAM Diode pulsed current, T pulse limited by T Jmax, s Pulse, V GE = V I FM 2 A Gateemitter voltage Transient Gateemitter voltage (T pulse = s, D <.) Power TC = 2 TC = C V GE 2 2 P D V W 2N2IHR AYWWG Operating junction temperature range T J 4 to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, /8 T SLD 26 C from case for seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORMATION Device Package Shipping NGTB2N2IHRWG TO247 (PbFree) 3 Units / Rail Semiconductor Components Industries, LLC, 23 October, 23 Rev. Publication Order Number: NGTB2N2IHR/D
2 NGTB2N2IHRWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R JC.39 C/W Thermal resistance junctiontoambient R JA 4 C/W ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V (BR)CES 2 V Collectoremitter saturation voltage, I C = 2 A, I C = 2 A, T J = 7 C V CEsat V Gateemitter threshold voltage V GE = V CE, I C = 2 A V GE(th) V Collectoremitter cutoff current, gate emitter shortcircuited V GE = V, V CE = 2 V V GE = V, V CE = 2 V, T J = 7 C I CES ma Gate leakage current, collectoremitter shortcircuited V GE = 2 V, V CE = V I GES na DYNAMIC CHARACTERISTIC Input capacitance C ies 32 pf Output capacitance V CE = 2 V, V GE = V, f = MHz C oes 24 Reverse transfer capacitance C res Gate charge total Q g 22 nc Gate to emitter charge V CE = 6 V, I C = 2 A, Q ge 36 Gate to collector charge Q gc 98 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time T J = 2 C t d(off) 23 ns Fall time V CC = 6 V, I C = 2 A R g = t f Turnoff switching loss V GE = V/ V E off.4 mj Turnoff delay time T J = C t d(off) 2 ns Fall time V CC = 6 V, I C = 2 A R g = t f 2 Turnoff switching loss V GE = V/ V E off. mj DIODE CHARACTERISTIC Forward voltage V GE = V, I F = 2 A V GE = V, I F = 2 A, T J = 7 C V F V 2
3 NGTB2N2IHRWG TYPICAL CHARACTERISTICS 2 T J = 2 C 2 V GE = 2 to V V V V 9 V 8 V 7 V T J = C 2 3 V GE = 2 to V 4 3 V V V 9 V 8 V 7 V Figure. Output Characteristics Figure 2. Output Characteristics 2 V GE = 2 to 3 V T J = 4 C 2 V V 9 V 7 V 8 V V CE = 2 V T J = 2 C T J = C V GE, GATEEMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics I C = 4 A I C = 2 A I C = A T J, JUNCTION TEMPERATURE ( C) C, CAPACITANCE (pf), C ies C oes C res T J = 2 C Figure. V CE(sat) vs. T J Figure 6. Typical Capacitance 3
4 NGTB2N2IHRWG TYPICAL CHARACTERISTICS 7 6 I F, FORWARD CURRENT (A) T J = 2 C. 2. T J = C V GE, GATEEMITTER VOLTAGE (V) V CE = 6 V I C = 2 A 2 2 V F, FORWARD VOLTAGE (V) Q G, GATE CHARGE (nc) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge SWITCHING LOSS (mj) V CE = 6 V I C = 2 A Rg = E off SWITCHING TIME (ns) 2 t d(off) t f V CE = 6 V I C = 2 A Rg = T J, JUNCTION TEMPERATURE ( C) Figure 9. Switching Loss vs. Temperature T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature SWITCHING LOSS (mj) V CE = 6 V T J = C Rg = E off Figure. Switching Loss vs. I C SWITCHING TIME (ns) V CE = 6 V T J = C Rg = t d(off) Figure 2. Switching Time vs. I C t f 4
5 NGTB2N2IHRWG TYPICAL CHARACTERISTICS.6 SWITCHING LOSS (mj) E off 6 V CE = 6 V T J = C I C = 2 A 7 8 SWITCHING TIME (ns) V CE = 6 V T J = C I C = 2 A t d(off) t f R g, GATE RESISTOR ( ) R g, GATE RESISTOR ( ) Figure 3. Switching Loss vs. R g Figure 4. Switching Time vs. R g.6.4 SWITCHING LOSS (mj) E off I C = 2 A T J = C Rg = SWITCHING TIME (ns) t d(off) I C = 2 A T J = C Rg = t f Figure. Switching Loss vs. V CE Figure 6. Switching Time vs. V CE.. dc operation Single Nonrepetitive Pulse T C = 2 C Curves must be derated linearly with increase in temperature ms s s Figure 7. Safe Operating Area, T C = 2 C Figure 8. Reverse Bias Safe Operating Area
6 NGTB2N2IHRWG TYPICAL CHARACTERISTICS Ipk (A) T C = C T C = 8 C 2 V CE = 6 V, T J 7 C, R gate =, V GE = / V, T case = 8 C or C (as noted), D =... FREQUENCY (khz) Figure 9. Collector Current vs. Switching Frequency V (BR)CES (V) T J, JUNCTION TEMPERATURE ( C) Figure 2. Typical V (BR)CES vs. Temperature R JC =.392 R(t) ( C/W) % Duty Cycle. 2% R i ( C/W) i (sec) % Junction R R 2 R n Case % C i = i /R i % C C 2 C n Duty Factor = t /t Single Pulse Peak T J = P DM x Z JC + T C PULSE TIME (sec) Figure 2. IGBT Transient Thermal Impedance 6
7 NGTB2N2IHRWG Figure 22. Test Circuit for Switching Characteristics 7
8 NGTB2N2IHRWG Figure 23. Definition of Turn On Waveform 8
9 NGTB2N2IHRWG Figure 24. Definition of Turn Off Waveform 9
10 NGTB2N2IHRWG PACKAGE DIMENSIONS E2/2 NOTE 4 D L 2X b2 NOTE 4 E 2 3 e A Q E2 NOTE 3 L NOTE c b4 3X b.2 M B A M A B A NOTE 7 SEATING PLANE TO247 CASE 34AL ISSUE A S P.63 M B A M 4 NOTE 6 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.M, CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED.3 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L. 6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF. TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF DIMENSION A TO BE MEASURED IN THE REGION DEFINED BY L. MILLIMETERS DIM MIN MAX A A b..4 b b c.4.8 D E. 6.2 E e.4 BSC L L P Q S 6. BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: 8387 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NGTB2N2IHR/D
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