MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

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1 NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations. Features High and Excellent Gain Linearity Fast and Very Tight Switching Times Parameters t si and t fi Very Stable Leakage Current due to the Planar Structure High Reliability PbFree Package is Available* 30 AMPERES 0 VOLTS BV CES 50 VOLTS BV CEO, 250 WATTS MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage V CEO 50 Vdc TO27 CASE 30L CollectorEmitter Breakdown Voltage V CES 0 Vdc CollectorBase Voltage V CBO 0 Vdc EmitterBase Voltage V EBO 9.0 Vdc MARKING DIAGRAM Collector Current Continuous Peak (Note 1) I C 30 5 Adc Base Current Continuous Peak (Note 1) I B 6.0 Adc MJW18020 AYWWG Total Power T C = 25 C Derate Above 25 C P D W W/ C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS T J, T stg 65 to +150 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 0.5 C/W Thermal Resistance, JunctiontoAmbient R JA 50 C/W Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds T L 275 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 s, Duty Cycle %. 1 BASE 3 EMITTER 2 COLLECTOR A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping MJW18020 TO27 30 Units/Rail MJW18020G TO27 (PbFree) 30 Units/Rail *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 Rev. 3 1 Publication Order Number: MJW18020/D

2 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = 0) V CEO(sus) 50 Vdc Collector Cutoff Current (V CE = Rated V CEO, I B = 0) Collector Cutoff Current (V CE = Rated V CES, V EB = 0) Emitter Cutoff Current (V CE = 9 Vdc, I C = 0) I CEO Adc I CES 500 Adc I EBO Adc ON CHARACTERISTICS DC Current Gain (I C = 3 Adc, V CE = 5 Vdc) (I C = Adc V CE = 2 Vdc) (I C = 20 Adc V CE = 2 Vdc) (I C = madc V CE = 5 Vdc) h FE BaseEmitter Saturation Voltage (I C = Adc, I B = 2 Adc) (I C = 20 Adc, I B = Adc) V BE(sat) Vdc CollectorEmitter Saturation Voltage (I C = Adc, I B = 2 Adc) (I C = 20 Adc, I B = Adc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (I C = 1 Adc, V CE = Vdc, f test = 1 MHz) Output Capacitance (V CB = Vdc, I E = 0, f test = 1 MHz) Input Capacitance (V EB = 8.0) V CE(sat) Vdc f T 13 MHz C ob pf C ib pf SWITCHING CHARACTERISTICS: Resistive Load (D.C. = %, Pulse Width = 70 s) TurnOn Time (I C = Adc, I B1 = I B2 = 2 Adc, Vcc = 125 V) t On ns Storage Time t s.75 6 s Fall Time t f ns TurnOff Time t Off s TurnOn Time (I C = 20 Adc, I B1 = I B2 = Adc, t On ns Storage Time Vcc = 125 V) t s s Fall Time t f ns TurnOff Time t Off 3.25 s SWITCHING CHARACTERISTICS: Inductive Load (V clamp = 300 V, Vcc = 15 V, L = 200 H) Fall Time (I C = Adc, I B1 = I B2 = 2 Adc) t fi ns Storage Time t si.75 6 s Crossover Time t c ns Fall Time (I C = 20 Adc, I B1 = I B2 = Adc) t fi ns Storage Time t si s Crossover Time t c ns 2

3 TYPICAL CHARACTERISTICS H FE, DC CURRENT GAIN T J = 125 C T J = 20 C V CE = 2.0 V H FE, DC CURRENT GAIN T J = 20 C V CE = 5.0 V Figure 1. DC Current Gain, V CE = 2.0 V Figure 2. DC Current Gain, V CE = 5.0 V.0.0 I c /I b = 5.0 I c /I b = V CE, VOLTAGE (VOLTS).0 T J = 20 C V CE, VOLTAGE (VOLTS).0 T J = 20 C Figure 3. Typical CollectorEmitter Saturation Voltage, I C /I B = Figure. Typical CollectorEmitter Saturation Voltage, I C /I B =.0.0 I c /I b = 5.0 I c /I b = V BE, VOLTAGE (VOLTS) T J = 20 C V BE, VOLTAGE (VOLTS) T J = 20 C Figure 5. Typical BaseEmitter Saturation Voltage, I C /I B = Figure 6. Typical BaseEmitter Saturation Voltage, I C /I B = 3

4 TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) C ib C ob 1 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (AMPS) DC 5 ms 1 ms s Extended SOA s V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 7. Typical Capacitance Figure 8. Forward Bias Safe Operating Area I C, COLLECTOR CURRENT (AMPS) V BE = 0 V T C 125 C I c /I b > L C = 500 H 1.5 V 5 V V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 9. Reverse Bias Safe Operating Area

5 PACKAGE DIMENSIONS TO27 CASE 30L02 ISSUE E N A K F 2 PL B U L P Y W J G D 3 PL C T E H Q 0.63 (0.025) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.5 BSC BSC H J K L N P Q U 6.15 BSC 0.22 BSC W (0.0) M Y Q S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MJW18020/D

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