BUH100 SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific state of art die designed for use in 100 Watts Halogen el

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1 SWTCHMODE NPN Silicon Planar Power Traistor The has an application specific state of art die designed for use in Watts Halogen electronic traformers. This power traistor is specifically designed to sustain the large inrush current during either the startup conditio or under a short circuit across the load. Features mproved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributio Pb Free Package is Available* POWER TRANSSTORS AMPERES OLTS WATTS MAXMUM RATNGS Rating Symbol alue Unit Collector Emitter Sustaining oltage CEO dc Collector Base Breakdown oltage CBO dc TO AB Collector Emitter Breakdown oltage CES dc CASE A 9 STYLE Emitter Base oltage EBO dc 3 Collector Current Continuous C Adc Peak (Note ) CM Base Current Continuous Peak (Note ) B BM Adc MARKNG DAGRAM Total Device Dissipation C = 5 C Derate above 5 C P D. W W/ C Operating and Storage Temperature T J, T stg to 5 C THERMAL CHARACTERSTCS Characteristics Symbol Max Unit Thermal Resistance, Junction to Case R JC.5 C/W Thermal Resistance, Junction to Ambient R JA.5 C/W Maximum Lead Temperature for Soldering Purposes/ from Case for 5 Seconds T L C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditio) and are not valid simultaneously. f these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Pulse Test: Pulse Width = 5 ms, Duty Cycle %. G AY WW A = Assembly Location Y = Year WW = Work Week G = Pb Free Package ORDERNG NFORMATON Device Package Shipping TO AB 5 Units / Rail G TO AB 5 Units / Rail (Pb Free) om/on/ Publication Order Number: /D *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components ndustries, LLC, January, Rev.

2 ELECTRCAL CHARACTERSTCS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Î Typ Max Î Unit Î OFF CHARACTERSTCS Collector Emitter Sustaining oltage CEO(sus) Î Î dc ( C = ma, L = 5 mh) Î Collector Base Breakdown oltage ( CBO = ma) CBO dc Î Emitter Base Breakdown oltage EBO Î ( EBO = ma) ÎÎ.5 Î dc Î Collector Cutoff Current CEO Î Adc ( CE = Rated CEO, B = ) Î Collector Cutoff Current ( CE = Rated CES, EB = ) C = 5 C C = 5 C CES Î Adc Î Collector Base Current C = 5 C CBO Î ( CB = Rated CBO, EB = ) C = 5 CÎÎ Adc Î Emitter Cutoff Current ( EB = 9 dc, C EBO Adc = ) Î ON CHARACTERSTCS Base Emitter Saturation oltage C = 5 C BE(sat) Î Î ( C = 5 Adc, B = Adc) ÎÎ. dc Î Collector Emitter Saturation oltage C = 5 C CE(sat) Î.3 ( C = 5 Adc, B = Adc) C = 5 C.Î dc.3. ( C = Adc, B =.5 Adc) C = 5 C C = 5 CÎÎ Î Î.5 Î..5 dc.5î DC Current Gain( C = Adc, CE = 5 dc) C = 5 C h FE Î C = 5 CÎÎ 5 Î Î ( C = 5 Adc, CE = 5 dc) C = 5 CÎÎ C = 5 C Î 5.5 Î Î Î ( C = Adc, CE = 5 dc) C = 5 CÎÎ C = 5 C ÎÎ Î.5 Î Î Î ( C = Adc, CE = 5 dc) C = 5 CÎÎ C = 5 C ÎÎ Î 9.5 Î Î Î Î DYNAMC SATURATON OLTAGE Dynamic Saturation C = 5 Adc, B = Adc C = 5 C CE(dsat). Î Î oltage: Determined 3 after rising B reaches CC = 3 C = 5 C. 9% of final B C =.5 Adc, B =.5 Adc C = 5 C. (See Figure 9) CC = 3 C = 5 C 5 DYNAMC CHARACTERSTCS Î Current Gain Bandwidth f ( C = Adc, CE = dc, f = MHz) T Î Î 3 Î Î MHz Output Capacitance C ob Î Î ( CB = dc, E =, f = MHz) ÎÎ 5 Î pf nput Capacitance C ib Î 3 5 Î pf ( EB = dc, f = MHz) om/on/

3 ELECTRCAL CHARACTERSTCS (T C = 5 C unless otherwise noted) Characteristic ÎÎ Symbol Min Î Î Typ Max Unit Î SWTCHNG CHARACTERSTCS: Resistive Load (D.C. %, Pulse Width = ) Turn on Time ÎÎ C = 5 C t on Î 3 Î C = Adc, B =. Adc B C = 5 C Î =. Adc Turn off Time CC = 3 dc C = 5 C t off Î. Î C = 5 C.5 Turn on Time C = Adc, B =. Adc C = 5 C t C = 5 C on Î Î 5 Î Î B =. Adc Turn off Time CC = 3 dc C = 5 C t off Î 3. Î ÎÎ C = 5 C.3 ÎÎ Î Turn on Time C = 5 Adc, B = Adc C = 5 C t on 5 C Î 5 Î = 5 C B = Adc Turn off Time CC = 3 dc C = 5 C t off.9 C = 5 C Î Î Turn on Time ÎÎ C = 5 C t on Î 5 Î C =.5 Adc, B =.5 Adc C = 5 C 9 B =.5 Adc ÎÎ Turn off Time CC = 3 dc C = t C = 5 C off Î Î Î..5.5 Î Î SWTCHNG CHARACTERSTCS: nductive Load ( clamp = 3, CC = 5, L = H) Fall Time ÎÎ C = 5 C 5 Î 5 ÎÎ C = 5 C Storage Time C = Adc B =. Adc C = 5 C t si 5. B =. Adc C Î = 5 C 5. Crossover Time C = 5 C t c ÎÎ C = 5 CÎÎ Î 3 Î 3 35Î Î Fall Time ÎÎ C = 5 C t fi Î 5 5Î C = 5 C C Storage Time = Adc B =. Adc C = t B =.5 Adc C = 5 C si.5 Î. 3 Î Crossover Time C = 5 C t c Î Î ÎÎ C = 5 C 3 35 Î Fall Time ÎÎ C = 5 C t fi Î 5 Î C = 5 C C = 5 Adc ÎÎ Storage Time B = Adc B C = 5 C t = Adc C = 5 C si Î Î Î Î Crossover Time ÎÎ C = 5 C t c ÎÎ C = 5 CÎÎ Î Î 5 Î 3 Î Fall Time ÎÎ C = 5 C t fi C 5 Î = 5 C 5 C =.5 Adc Storage Time B =.5 Adc C = 5 C t si B =.5 Adc C = 5 CÎÎ Î Î.5.5Î Î Crossover Time ÎÎ C = 5 C t c Î 5 35Î C = 5 C t fi 5 om/on/ 3

4 TYPCAL STATC CHARACTERSTCS CE = CE = 3 h FE, DC CURRENT GAN T J = 5 C T J = C T J = 5 C h FE, DC CURRENT GAN T J = 5 C T J = C T J = 5 C C, COLLECTOR CURRENT (AMPS) C, COLLECTOR CURRENT (AMPS) Figure. DC Current olt Figure. DC Current 3 olt hfe, DC CURRENT GAN CE = 5 C / B = 5 T J = 5 C T J = C T J = 5 C T J = 5 C T J = C. T J = 5 C CE, OLTAGE (OLTS).. C, COLLECTOR CURRENT (AMPS).... C, COLLECTOR CURRENT (AMPS) Figure 3. DC Current 5 olt Figure. Collector Emitter Saturation oltage.5 C / B = C / B = 5 CE, OLTAGE (OLTS). T J = 5 C T J = C T J = 5 C BE, OLTAGE (OLTS).5 T J = C T J = 5 C T J = 5 C.... C, COLLECTOR CURRENT (AMPS)... C, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation oltage Figure. Base Emitter Saturation Region om/on/

5 TYPCAL STATC CHARACTERSTCS.5 BE, OLTAGE (OLTS).5 C / B = T J = C T J = 5 C T J = 5 C CE, OLTAGE (OLTS).5.5 T J = 5 C CE(sat) ( C = A) A 5 A 3 A A A 5 A... C, COLLECTOR CURRENT (AMPS).. B, BASE CURRENT (A) Figure. Base Emitter Saturation Region Figure. Collector Saturation Region C, CAPACTANCE (pf) C ib R, REERSE OLTAGE (OLTS) T J = 5 C f (test) = MHz C ob BCER (OLTS) 9 5 ma 5 ma, 5 mh R BE ( ) T J = 5 C Figure 9. Capacitance Figure. Resistive Breakdown om/on/ 5

6 TYPCAL SWTCHNG CHARACTERSTCS 5 B = B CC = 3 PW = T J = 5 C T J = 5 C B = B CC = 3 PW = t, TME () 5 T J = 5 C T J = 5 C C / B = 5 C t, TME ( ) μ C / B = C C / B = 5 C, COLLECTOR CURRENT (AMPS) C / B = C, COLLECTOR CURRENT (AMPS) Figure. Resistive Switching Time, t on Figure. Resistive Switch Time, t off t, TME ( ) μ 5 3 C / B = 5 B = B CC = 5 Z = 3 L C = H t, TME ( ) μ 5 3 C / B = B = B CC = 5 Z = 3 L C = H T J = 5 C T J = 5 C C, COLLECTOR CURRENT (AMPS) T J = 5 C T J = 5 C C, COLLECTOR CURRENT (AMPS) Figure 3. nductive Storage Time, t si Figure 3 Bis. nductive Storage Time, t si B = B CC = 5 Z = 3 L C = H T J = 5 C T J = 5 C t c T J = 5 C T J = 5 C t c B = B CC = 5 Z = 3 L C = H t, TME () t fi t, TME () t fi C, COLLECTOR CURRENT (AMPS) C, COLLECTOR CURRENT (AMPS) Figure. nductive Storage Time, t c & t C / B = 5 om/on/ Figure 5. nductive Storage Time, t c & t C / B =

7 TYPCAL SWTCHNG CHARACTERSTCS C =.5 A tsi, STORAGE TME ( μs) 3 C =.5 A T J = 5 C T J = 5 C h FE, FORCED GAN C = 5 A B = B CC = 5 Z = 3 L C = H t fi, FALL TME () Boff = B CC = 5 Z = 3 L C = H C = 5 A 5 9 h FE, FORCED GAN T J = 5 C T J = 5 C Figure. nductive Storage Time Figure. nductive Fall Time t c, CROSSOER TME () 5 B = B CC = 5 Z = 3 L C = H C =.5 A 3 T J = 5 C C = 5 A T J = 5 C h FE, FORCED GAN Figure. nductive Crossover Time, t c B CE 9% B dyn 3 dyn 3 TME Figure 9. Dynamic Saturation oltage Measurements 9 C 9% C t fi t si 5 clamp % % C clamp t c 3 B 9% B 3 5 TME Figure. nductive Switching Measurements om/on/

8 Table. nductive Load Switching Drive Circuit +5 F 5 3 W 3 W MTPP F CE PEAK C PEAK + MPF93 MPF93 MUR5 MTPP R B out A CE B B COMMON off 5 5 F 5 3 W MJE MTPN R B F (BR)CEO(sus) L = mh R B = CC = C(pk) = ma B nductive Switching L = H R B = CC = 5 R B selected for desired B RBSOA L = 5 H R B = CC = 5 R B selected for desired B TYPCAL THERMAL RESPONSE POWER DERATNG FACTOR.... T J(pk) may be calculated from the data in Figure. At any SECOND BREAKDOWN case temperatures, thermal limitatio will reduce the power DERATNG that can be handled to values less than the limitatio imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The THERMAL DERATNG safe level is specified as a reverse biased safe operating area (Figure 3). This rating is verified under clamped conditio so that the device is never subjected to an avalanche mode. T C, CASE TEMPERATURE ( C) Figure. Forward Bias Power Derating There are two limitatio on the power handling ability of a traistor: average junction temperature and second breakdown. Safe operating area curves indicate C CE limits of the traistor that must be observed for reliable operation; i.e., the traistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when T C > 5 C. Second breakdown limitatio do not derate the same as thermal limitatio. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure. C, COLLECTOR CURRENT (AMPS). DC 5 ms ms EXTENDED SOA. CE, COLLECTOR EMTTER OLTAGE (OLTS) Figure. Forward Bias Safe Operating Area om/on/

9 C, COLLECTOR CURRENT (AMPS) GAN CE, COLLECTOR EMTTER OLTAGE (OLTS) T C 5 C L C = mh Figure 3. Reverse Bias Safe Operating Area r(t), TRANSENT THERMAL RESSTANCE (NORMALZED) P (pk) R JC (t) = r(t) R JC.5 R JC =.5 C/W MAX D CURES APPLY FOR POWER t PULSE TRAN SHOWN. t READ TME AT t DUTY CYCLE, D = t T J(pk) T C = P (pk) R JC (t) SNGLE PULSE /t. t, TME (ms) Figure. Typical Thermal Respoe (Z JC (t)) for om/on/ 9

10 PACKAGE DMENSONS TO AB CASE A 9 SSUE AA H Q Z L G B 3 N D A K F T U R J S C T SEATNG PLANE NOTES:. DMENSONNG AND TOLERANCNG PER ANS Y.5M, 9.. CONTROLLNG DMENSON: NCH. 3. DMENSON Z DEFNES A ZONE WHERE ALL BODY AND LEAD RREGULARTES ARE ALLOWED. NCHES MLLMETERS DM MN MAX MN MAX A B C..9.. D F G H J..5.. K L N Q R....9 S T U Z.. STYLE : PN. BASE. COLLECTOR 3. EMTTER. COLLECTOR SWTCHMODE is a trademark of Semiconductor Components ndustries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components ndustries, LLC (SCLLC). SCLLC reserves the right to make changes without further notice to any products herein. SCLLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCLLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCLLC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCLLC does not convey any licee under its patent rights nor the rights of others. SCLLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCLLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCLLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCLLC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCLLC was negligent regarding the design or manufacture of the part. SCLLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLCATON ORDERNG NFORMATON LTERATURE FULFLLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Phoenix, Arizona 5 3 USA Phone: 9 or 3 3 Toll Free USA/Canada Fax: 9 9 or 3 3 Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: 955 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: om/on/ ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. /D