NTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V
|
|
- Dwayne Emil Hensley
- 5 years ago
- Views:
Transcription
1 Power MOSFET.9 Amps, Volts NChannel TSSOP Features New Low Profile TSSOP Package Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified I DSS and V DS(on) Specified at Elevated Temperatures PbFree Package is Available Applications Power Management in Portable and BatteryPowered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Phones Battery Applications NoteBook PC MAXIMUM RATINGS (T C = C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Vdc DraintoGate Voltage (R GS =. M ) V DGR Vdc GatetoSource Voltage Continuous V GS Vdc Thermal Resistance Single Die JunctiontoAmbient (Note ) Total Power T A = C Continuous Drain T A = C Pulsed Drain Current (Note ) Thermal Resistance Single Die JunctiontoAmbient (Note ) Total Power T A = C Continuous Drain T A = C Continuous Drain T A = 7 C Pulsed Drain Current (Note ) Thermal Resistance Single Die JunctiontoAmbient (Note 3) Total Power T A = C Continuous Drain T A = C Continuous Drain T A = 7 C Pulsed Drain Current (Note ) R JA P D ID I DM R JA P D ID I D I DM R JA P D ID I D I DM Operating and Storage Temperature Range T J, T stg to + Single Pulse DraintoSource Avalanche Energy Starting (V DD = Vdc, V GS =. Vdc, Peak I L =. Apk, L = mh, R G = ) Maximum Lead Temperature for Soldering Purposes for seconds E AS C/W W C/W W C/W W C mj T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Mounted onto a square FR board ( in sq, oz Cu. thick singlesided), t < seconds.. Mounted onto a square FR board ( in sq, oz Cu. thick singlesided), t = ss. 3. Minimum FR or G PCB, t = steady state.. Pulse Test: Pulse Width = 3 s, Duty Cycle = %. G.9 AMPERES VOLTS 3 V GS =. V NChannel D S TSSOP CASE 9S PLASTIC G NChannel D MARKING DIAGRAM & PIN ASSIGNMENT = Specific Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package ORDERING INFORMATION S Device Package Shipping NTQDR TSSOP /Tape & Reel NTQDRG TSSOP (PbFree) D D D D YWW A S G S G /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D Semiconductor Components Industries, LLC, March, Rev. 3 Publication Order Number: NTQDR/D
2 ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (V GS = Vdc, I D = ) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V GS = Vdc, V DS = Vdc, ) (V GS = Vdc, V DS = Vdc, T J = C) GateBody Leakage Current (V GS = ± Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D = ) Temperature Coefficient (Negative) Static DraintoSource OnState Resistance (V GS =. Vdc, I D =.9 ) (V GS =. Vdc, I D =. ) (V GS =. Vdc, I D = 3. ) (V GS =. Vdc, I D =.9 ) Forward Transconductance (V DS = Vdc, I D =. ) DYNAMIC CHARACTERISTICS V (BR)DSS I DSS.. I GSS ± V GS(th). R DS(on) g FS Vdc mv/ C n Vdc mv/ C Mhos Input Capacitance C iss 7 pf Output Capacitance (V DS = Vdc, V GS = Vdc, f =. MHz) C oss 3 Reverse Transfer Capacitance C rss 7 SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time t d(on) ns Rise Time (V DD = Vdc, I D =., t r TurnOff Delay Time V GS =. Vdc, R G =. ) t d(off) 7 Fall Time t f 9 TurnOn Delay Time t d(on). Rise Time (V DD = Vdc, I D =., t r TurnOff Delay Time V GS =. Vdc, R G = 3. ) t d(off) 3 Fall Time t f 7 Gate Charge BODYDRAIN DIODE RATINGS Forward OnVoltage Reverse Recovery Time (V DS = Vdc, V GS =. Vdc, I D =. ) (I S =., V GS = Vdc) (I S =., V GS = Vdc, T J = C) (I S =., V GS = Vdc, V DS = Vdc di S /dt = A/ s) Q tot 3 nc Q gs. Q gd. V SD..7. Vdc t rr 3 ns t b t a Reverse Recovery Stored Charge Q RR.3 C. Switching characteristics are independent of operating junction temperature.
3 V.. V V DS V V GS = V 3 V. V. V. V. V T J = C. V T J = C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ) I D =. A..3.. V GS, GATETOSOURCE VOLTAGE (VOLTS) R DS(on), DRAINTOSOURCE RESISTANCE ( ) V GS =. V V GS =. V R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED). I D =.9 A V GS =. V Figure 3. OnResistance versus GatetoSource Voltage. 7 T J, JUNCTION TEMPERATURE ( C) Figure. OnResistance Variation with Temperature I DSS, LEAKAGE (na) Figure. OnResistance versus Drain Current and Gate Voltage V GS = V T J = C T J = C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. DraintoSource Leakage Current versus Voltage 3
4 C, CAPACITANCE (pf) t, TIME (ns) C iss C rss GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V DD = V I D =. A V GS =. V t r t f t d(off) t d(on) V GS V DS = V V GS = V V DS C iss C oss C rss R G, GATE RESISTANCE ( ) V GS, GATETOSOURCE VOLTAGE (VOLTS) I S, SOURCE CURRENT (AMPS) Q g, TOTAL GATE CHARGE (nc) Q V GS = V Q Q T V GS Figure. GatetoSource Voltage versus Total Charge I D =. A V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure. Diode Forward Voltage versus Current. V GS = V SINGLE PULSE T C = C R DS(on) Limit Thermal Limit Package Limit s ms ms dc I S t p di/dt t a t rr t b. I S TIME.. V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. Maximum Rated Forward Biased Safe Operating Area Figure. Diode Reverse Recovery Waveform I S
5 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)... D = Single Pulse t, TIME (s) Figure 3. Thermal Response.
6 PACKAGE DIMENSIONS TSSOP CASE 9S ISSUE A. (.) T. (.) T L U U.7 (.3) T SEATING PLANE S PIN IDENT S D X L/ C x A V P K REF. (.) M T U S V S G B U J N ÏÏÏÏ ÎÎÎÎ ÏÏÏÏ ÎÎÎÎ DETAIL E N J K K SECTION NN. (.) M W NOTES: М. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9. М. CONTROLLING DIMENSION: MILLIMETER. М 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED. (.) PER SIDE. М. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED. (.) PER SIDE. М. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. М. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C..3 D.... F..7.. G. BSC. BSC J.9... J.9... K K L. BSC. BSC M P..7 P 3.. P F DETAIL E SOLDERING FOOTPRINT* inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mm
7 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Phoenix, Arizona 3 USA Phone: 977 or 33 Toll Free USA/Canada Fax: 9779 or 337 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 3 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NTQDR/D
NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationNTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
NTP5N6L, NTB5N6L Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More informationNTB45N06L, NTBV45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationMMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
More informationNTD32N06L. Power MOSFET 32 Amps, 60 Volts. Logic Level, N-Channel DPAK
NTDN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More informationNTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More informationNTGS3446. Power MOSFET 20 V, 5.1 A Single N Channel, TSOP6 Features
Power MOSFET V,. Single NChannel, TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified SS
More informationMTD6N15T4G. Power Field Effect Transistor DPAK for Surface Mount. N Channel Enhancement Mode Silicon Gate
Power Field Effect Transistor DPAK for Surface Mount NChannel EnhancementMode Silicon Gate This Power FET is designed for high speed, low loss power switching applications such as switching regulators,
More informationNTB60N06, NVB60N06. Power MOSFET. 60 V, 60 A, N Channel D 2 PAK. 60 VOLTS, 60 AMPERES R DS(on) = 14 m
NTB6N6, NVB6N6 Power MOSFET 6 V, 6 A, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AECQ11
More informationMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More informationBAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More information1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS
PMT90B Series. Watt Plastic Surface Mount POWERMITE Package This complete new line of. Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationMJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
More informationNGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
More informationNGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
More informationNE522 High Speed Dual Differential Comparator/Sense Amp
HighSpeed DualDifferential Comparator/Sense Amp Features 5 ns Maximum Guaranteed Propagation Delay 0 A Maximum Input Bias Current TTL-Compatible Strobes and Outputs Large Common-Mode Input oltage Range
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More information2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
More informationonlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationNGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More information2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationT95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
More informationMUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More information2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140
More informationV N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationNTF5P03T3. P Channel SOT AMPERES, 30 VOLTS R DS(on) = 100 m
NTF5PT Preferred Device Power MOSFET 5. mps, Volts PChannel SOT Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT Surface Mount Package valanche
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationPN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Rating Symbol Value
More informationNGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationBC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO CBO
More informationNLSV2T Bit Dual-Supply Inverting Level Translator
2-Bit Dual-Supply Inverting Level Translator The NLSV2T240 is a 2 bit configurable dual supply voltage level translator. The input A n and output B n ports are designed to track two different power supply
More informationBC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter
More informationMMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general
More informationNTMS5P02R2G. Power MOSFET 5.4 Amps, 20 Volts. P Channel Enhancement Mode Single SOIC 8 Package
NTMS5PR Power MOSFET 5. mps, Volts PChannel EnhancementMode Single SOIC Package Features High Density Power MOSFET with Ultra Low R DS(on) Providing Higher Efficiency Miniature SOIC Surface Mount Package
More informationBC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
More informationBC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
More informationMUR405, MUR410, MUR415, MUR420, MUR440, MUR460
4, 4, 41, 42, 44, 46 42 and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling
More information2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector
More informationNUD3160, SZNUD3160. Industrial Inductive Load Driver
Industrial Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
More informationBC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
High Current Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 60 dc Collector Base oltage CBO 60 dc Emitter
More informationMC74HC132A. Quad 2 Input NAND Gate with Schmitt Trigger Inputs. High Performance Silicon Gate CMOS
Quad 2 Input NAND Gate with Schmitt Trigger Inputs High Performance Silicon Gate CMOS The is identical in pinout to the LS32. The device inputs are compatible with standard CMOS outputs; with pull up resistors,
More information2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
N443 Preferred Device General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE Collector Emitter Voltage V CEO 4 Vdc Collector
More informationBC846ALT1 Series. General Purpose Transistors. NPN Silicon
BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 ESD Rating Machine Model: >400 PbFree Packages
More informationNGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V
NGTBN6SEG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
More informationFGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More informationNTMD6P02R2SG. Power MOSFET 6 Amps, 20 Volts. P Channel SOIC 8, Dual Features 6 AMPERES, 20 VOLTS
NTMD6P2R2 Preferred Device Power MOSFET 6 mps, 2 Volts PChannel SOIC, Dual Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC Surface Mount
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationMC14049B, MC14050B. Hex Buffer
MC4049B, MC4050B Hex Buffer The MC4049B Hex Inverter/Buffer and MC4050B Noninverting Hex Buffer are constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure.
More information74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demultiplexer High Performance Silicon Gate CMOS The 74HC38 is identical in pinout to the LS38. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
More informationMMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree,
More informationNCV8402D, NCV8402AD. Dual Self-Protected Low-Side Driver with Temperature and Current Limit
Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCVD/AD is a dual protected Low Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and
More informationSN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY
Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
More information2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
More informationSN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY
Quad 2 Input Multiplexer The LSTTL/ MSI is a high speed Quad 2-Input Multiplexer. Four bits of data from two sources can be selected using the common Select and Enable inputs. The four buffered outputs
More informationNLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
More informationSN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
More informationNTD14N03R, NVD14N03R. Power MOSFET 14 Amps, 25 Volts. N Channel DPAK. 14 AMPERES, 25 VOLTS R DS(on) = 70.4 m (Typ)
NTDNR, NVDNR Power MOSFET mps, 5 Volts NChannel DPK Features Planar HDe Process for Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low C iss to Minimize Driver Loss Low Gate Charge
More informationNGTB40N120FL3WG. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
NGTBNFLWG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break
FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationMMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationMC74AC138, MC74ACT of 8 Decoder/Demultiplexer
1 of 8 Decoder/Demultiplexer The MC74AC138/74ACT138 is a high speed 1 of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple
More informationNTMD3P03, NVMD3P03 Power MOSFET Amps, -30 Volts Dual P Channel SOIC 8 Features
NTMDP, NVMDP Power MOSFET -. mps, - Volts Dual PChannel SOIC Features High Efficiency Components in a Dual SOIC Package High Density Power MOSFET with Low R DS(on) Miniature SOIC Surface Mount Package
More informationFST Bit Bus Switch
FST32 4-Bit Bus Switch The ON Semiconductor FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and adds
More informationPZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for
More informationNTP30N20G. Power MOSFET 30 Amps, 200 Volts. N Channel Enhancement Mode TO AMPERES 200 VOLTS 68 V GS = 10 V (Typ)
NTP3N Preferred evice Power MOSFET 3 Amps, Volts NChannel EnhancementMode TO Features Sourcetorain iode Recovery Time Comparable to a iscrete Fast Recovery iode Avalanche Energy Specified I SS and R S(on)
More information74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS
Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs High-Performance Silicon-Gate CMOS The 74HCT245 is identical in pinout to LS245. The device has TTL-Compatible Inputs. The HCT245
More informationBC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSBC847BDW1T2G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals SOT363 CASE 419B STYLE 1 These transistors are designed for general
More informationMC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger
MC74AC32, MC74ACT32 Quad 2 Input NAND Schmitt Trigger The MC74AC/74ACT32 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free
More informationNSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
More informationMC Bit Magnitude Comparator
Bit Magnitude Comparator The MC0 is a high speed expandable bit comparator for comparing the magnitude of two binary words. Two outputs are provided: and. A = B can be obtained by NORing the two outputs
More informationBAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
More informationNCV8401A, NCV8401B. Self-Protected Low Side Driver with Temperature and Current Limit
Self-Protected Low Side Driver with Temperature and Current Limit NCV8A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD
More informationNL17SH02. Single 2-Input NOR Gate
N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET
FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r
More informationMC74VHC132. Quad 2 Input NAND Schmitt Trigger
MC74HC32 Quad 2 Input NAND Schmitt Trigger The MC74HC32 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent
More informationMC14584B. Hex Schmitt Trigger
MC4584B Hex Schmitt Trigger The MC4584B Hex Schmitt Trigger is constructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. These devices find primary use where
More information74FST Bit Bus Switch
4FST32 4 Bit Bus Switch The ON Semiconductor 4FST32 is a quad, high performance switch. The device is CMOS TTL compatible when operating between 4 and. Volts. The device exhibits extremely low R ON and
More information