NCV8401A, NCV8401B. Self-Protected Low Side Driver with Temperature and Current Limit
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1 Self-Protected Low Side Driver with Temperature and Current Limit NCV8A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Features Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dv/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free and are RoHS Compliant Typical Applications Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits Automotive / Industrial V DSS (Clamped) Gate Input ESD Protection Temperature Limit R DS(ON) TYP Overvoltage Protection Current Limit I D MAX (Limited) 42 V 23 V 33 A* *Max current may be limited below this value depending on input conditions. Drain Current Sense Source MARKING DIAGRAM Y WW xxxxx G DPAK CASE 369C STYLE 2 = Year = Work Week = 8A or 8B = Pb Free Package 3 2 YWW NCV xxxxxg = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device Package Shipping NCV8ADTRKG NCV8BDTRKG DPAK (Pb Free) DPAK (Pb Free) /Tape & Reel /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 6 July, 7 Rev. 3 Publication Order Number: NCV8/D
2 MAXIMUM RATINGS (T J = C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage Internally Clamped V DSS 42 V Drain to Gate Voltage Internally Clamped (R GS =. M ) V DGR 42 V Gate to Source Voltage V GS 4 V Drain Current Continuous I D Internally Limited Total Power T A = C (Note T A = C (Note 2) Thermal Resistance, Junction to Case Junction to Ambient (Note ) Junction to Ambient (Note 2) Single Pulse Drain to Source Avalanche Energy (V DD = Vdc, V GS =. Vdc, I L = 3.6 Apk, L = mh, R G =, T Jstart = C) (Note 3) P D. 2. R JC R JA R JA.6 6 W C/W E AS 8 mj Load Dump Voltage (V GS = and V, R I = 2., R L = 3., t d = ms) V LD 6 V Operating Junction Temperature T J to C Storage Temperature T stg to C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Minimum FR4 PCB, steady state. 2. Mounted onto a 2 square FR4 board ( square, 2 oz. Cu.6 thick single sided, t = steady state). 3. Not subject to production testing. I D + DRAIN + I G GATE VDS VGS SOURCE Figure. Voltage and Current Convention 2
3 MOSFET ELECTRICAL CHARACTERISTICS (T J = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Clamped Breakdown Voltage (V GS = Vdc, I D = 2 Adc) (V GS = Vdc, I D = 2 Adc, T J = C) (Note 4) Zero Gate Voltage Drain Current (V DS = 32 Vdc, V GS = Vdc) (V DS = 32 Vdc, V GS = Vdc, T J = C) (Note 4) Gate Input Current (V GS =. Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D =.2 madc) Threshold Temperature Coefficient Static Drain to Source On Resistance (Note ) (V GS = Vdc, I D =. Adc, T C) (V GS = Vdc, I D =. Adc, T C) (Note 4) Static Drain to Source On Resistance (Note ) (V GS =. Vdc, I D =. Adc, T C) (V GS =. Vdc, I D =. Adc, T C) (Note 4) Source Drain Forward On Voltage (I S = A, V GS = V) V (BR)DSS I DSS. 6.. Vdc Adc I GSSF Adc GS(th)..8. R DS(on) R DS(on) Vdc mv/ C m m V SD.8. V SWITCHING CHARACTERISTICS (Note 4) Turn ON Time (% V IN to 9% I D ) V IN = V to V, V DD = V t ON 4 s Turn OFF Time (9% V IN to % I D ) I D =. A, Ext R G = 2. t OFF 29 Turn ON Time (% V IN to 9% I D ) V IN = V to V, V DD = V, t ON 6 Turn OFF Time (9% V IN to % I D ) I D =. A, Ext R G = 2. t OFF 64 8 Slew Rate ON (8% V DS to % V DS ) V in = to V, V DD = 2 V, dv DS /dt ON V s Slew Rate OFF (% V DS to 8% V DS ) R L = 4.7 dv DS /dt OFF.36.7 SELF PROTECTION CHARACTERISTICS (T J = C unless otherwise noted) Current Limit V GS =. V, V DS = V V GS =. V, T J = C (Note 4) V GS = V, V DS = V V GS = V, T J = C (Note 4) I LIM Temperature Limit (Turn off) V GS =. V (Note 4) T LIM(off) 7 C Thermal Hysteresis V GS =. V T LIM(on) C Temperature Limit (Turn off) V GS = V (Note 4) T LIM(off) 6 8 C Thermal Hysteresis V GS = V T LIM(on) C GATE INPUT CHARACTERISTICS (Note 4) Device ON Gate Input Current V GS = V I D =. A I GON A V GS = V I D =. A 7 Current Limit Gate Input Current V GS = V, V DS = V I GCL.. ma V GS = V, V DS = V.7. Thermal Limit Fault Gate Input Current V GS = V, V DS = V I GTL.6. ma V GS = V, V DS = V Adc ESD ELECTRICAL CHARACTERISTICS (T J = C unless otherwise noted) (Note 4) Electro Static Discharge Capability ESD Human Body Model (HBM) Machine Model (MM) 4. Not subject to production testing.. Pulse Test: Pulse Width s, Duty Cycle 2%. V 3
4 TYPICAL PERFORMANCE CURVES, I L(max) (A) T Jstart = C T Jstart = C E max (mj), T Jstart = C T Jstart = C L (mh) Figure 2. Single Pulse Maximum Switch off Current vs. Load Inductance, L (mh) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance T Jstart = C I L(max) (A) T Jstart = C E max (mj), T Jstart = C T Jstart = C Time in Clamp (ms) Time in Clamp (ms) Figure 4. Single Pulse Maximum Inductive Switch off Current vs. Time in Clamp Figure. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp I D (A) V 7 V 8 V 9 V 3 V GS = 2. V 4 V V 4 V 3 V I D (A) C 3. C C C 4. V DS (V) V GS (V) Figure 6. On state Output Characteristics at C Figure 7. Transfer Characteristics (V DS = V) 4
5 TYPICAL PERFORMANCE CURVES R DS(on) (m ) C C C I D = 3 A R DS(on) (m ) 4 C, V GS = V C, V GS = V C, V GS = V C, V GS = V C, V GS = V C, V GS = V C V GS (V) Figure 8. R DS(on) vs. Gate Source Voltage 2..7 C, V GS = V C, V GS = V I D (A) Figure 9. R DS(on) vs. Drain Current 4 C NORMALIZED R DS(on)....7 V GS = V V GS = V I LIM (A) C C C. 4 T ( C) Figure. Normalized R DS(on) vs. Temperature (I D = A) V GS (V) Figure. Current Limit vs. Gate Source Voltage (V DS = V) V GS = V C I LIM (A) V GS = V I DSS ( A).. C C 6 8 T J ( C) Figure 2. Current Limit vs. Junction Temperature (V DS = V). C. V DS (V) Figure 3. Drain to Source Leakage Current (V GS = V)
6 TYPICAL PERFORMANCE CURVES.2. NORMALIZED V GS(th) (V) V SD (V) C C C C TIME ( s) TIME ( s) T ( C) Figure 4. Normalized Threshold Voltage vs. Temperature (I D =.2 ma, V DS = V GS ) t d(on) V GS (V) Figure 6. Resistive Load Switching Time vs. Gate Source Voltage (V DD = V, I D = A, R G = ) t d(on), V GS = V 7 t d(on), V GS = V R G ( ) t d(off) Figure 8. Resistive Load Switching Time vs. Gate Resistance (V DD = V, I D = A) t f t r t d(off), V GS = V t d(off), V GS = V t f, V GS = V t r, V GS = V t r, V GS = V DRAIN SOURCE VOLTAGE SLOPE (V/ s) DRAIN SOURCE VOLTAGE SLOPE (V/ s) t f, V GS = V I S (A) Figure. Source Drain Diode Forward Characteristics (V GS = V) 4 6 V GS (V) Figure 7. Resistive Load Switching Drain Source Voltage Slope vs. Gate Source Voltage (V DD = V, I D = A, R G = ) dv DS /d t(off), V GS = V R G ( ) Figure 9. Drain Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance (V DD = V, I D = A) 7 dv DS /d t(on) dv DS /d t(off) 8 9 dv DS /d t(on), V GS = V dv DS /d t(on), V GS = V dv DS /d t(off), V GS = V 6
7 TYPICAL PERFORMANCE CURVES 2 2 R JA ( C/W) 7 7 PCB Cu thickness,. oz PCB Cu thickness, 2. oz COPPER HEAT SPREADER AREA (mm 2 ) Figure. R JA vs. Copper Area R JA 788 mm 2 C /W, 2 oz. Copper. % Duty Cycle % % % 2% %. Single Pulse Psi Tab A. E PULSE WIDTH (sec) Figure 2. Transient Thermal Resistance 7
8 TEST CIRCUITS AND WAVEFORMS RL VIN RG G D DUT VDD + S IDS Figure 22. Resistive Load Switching Test Circuit 9% VIN % t ON t OFF 9% IDS % Figure 23. Resistive Load Switching Waveforms 8
9 TEST CIRCUITS AND WAVEFORMS L VIN VDS RG G D DUT + VDD tp S IDS Figure 24. Inductive Load Switching Test Circuit V VIN V T av T p V (BR)DSS I pk VDS VDD V DS(on) IDS Figure. Inductive Load Switching Waveforms 9
10 PACKAGE DIMENSIONS DPAK CASE 369C ISSUE F L3 E b A D B A DETAIL A L4 b2 NOTE 7 c e b SIDE VIEW TOP VIEW. (.3) M C L2 GAUGE PLANE L L DETAIL A ROTATED 9 CW H C SEATING PLANE A C c2 H SOLDERING FOOTPRINT* Z BOTTOM VIEW ALTERNATE CONSTRUCTIONS BOTTOM VIEW 3..8 Z Z NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.M, CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A....3 b b b c c D E e.9 BSC 2.29 BSC H L L.4 REF 2.9 REF L2. BSC. BSC L L4.. Z STYLE 2: PIN. GATE 2. DRAIN 3. SOURCE 4. DRAIN SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCV8/D
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