MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
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- Dinah Harmon
- 5 years ago
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1 4, 4, 41, 42, 44, and 46 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features Ultrafast 2 ns, ns and 7 ns Recovery Times 17 C Operating Junction Temperature ow Forward Voltage ow eakage Current High Temperature Glass Passivated Junction Reverse Voltage to 6 V Shipped in Plastic Bags, per Bag Available in Tape and Reel, 1 per Reel, by Adding a R Suffix to the Part Number Pb Free Packages are Available* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 26 C Max. for Seconds Polarity: Cathode indicated by Polarity Band UTRAFAST RECTIFIERS 4. AMPERES, 6 VOTS AXIA EAD CASE 267 STYE 1 MARKING DIAGRAM A 4xx YYWW A = Assembly ocation 4xx = Device Number x =,, 1, 2, 4, 6 YY = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C, 26 July, 26 Rev Publication Order Number: 42/D
2 4, 4, 41, 42, 44, 46 MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Average Rectified Forward Current (Square Wave) (Mounting Method # Per Note 2) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase, 6 Hz) Symbol V RRM V RWM V R Unit V I F(AV) T A = 8 C T A = 4 C I FSM 12 1 A A Operating Junction Temperature & Storage Temperature T J, T stg 6 to +17 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMA CHARACTERISTICS Rating Symbol Maximum Thermal Resistance, Junction to Ambient R JA See Note 2 C/W Unit EECTRICA CHARACTERISTICS Rating Maximum Instantaneous Forward Voltage (Note 1) (i F =. A, T J = 1 C) (i F =. A, T J = 2 C) (i F = 4. A, T J = 2 C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, T J = 1 C) (Rated dc Voltage, T J = 2 C) Maximum Reverse Recovery Time (I F = 1. A, di/dt = A/ s) (I F =. A, i R = 1. A, I REC =.2 A) Maximum Forward Recovery Time (I F = 1. A, di/dt = A/ s, Recovery to 1. V) Symbol v F i R 1 t rr Unit t fr 2 ns V A ns Controlled Avalanche Energy (Maximum) W aval mj 1. Pulse Test: Pulse Width = s, Duty Cycle 2.%. 2
3 4, 4, 41, 42, 44, 46 ORDERING INFORMATION 4 4G 4 4G 4R 4RG 41 41G 41R 41RG 42 42G 42R 42RG 44 44G 44R 44RG 46 46G 46FF 46FFG Device Package Shipping 1 / Tape & Reel 1 / Tape & Reel 1 / Tape & Reel 1 / Tape & Reel 46R 1 / Tape & Reel 46RG For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. *These packages are inherently Pb Free.
4 , INSTANTANEOUS FORWARD CURRENT (AMPS) F T J = 17 C 4, 4, 41, 42, 44, v F, INSTANTANEOUS VOTAGE (V) Figure 1. Typical Forward Voltage 4, 4, 41, 42 2 C C , REVERSE CURRENT ( A) i I R I F(AV), AVERAGE FORWARD CURRENT (A) DC V R, REVERSE VOTAGE (V) Figure 2. Typical Reverse Current T A, AMBIENT TEMPERATURE ( C) Figure. Current Derating (Mounting Method # Per Note 2) T J = 17 C C 2 C Rated V R R JA = 28 C/W , AVERAGE POWER DISSIPATION (WATTS) P F(AV) (Capacitive oad) I PK I AV = dc C, CAPACITANCE (pf) T J = 2 C 2 4 I F(AV), AVERAGE FORWARD CURRENT (A) Figure 4. Power Dissipation V R, REVERSE VOTAGE (V) Figure. Typical Capacitance 4
5 , INSTANTANEOUS FORWARD CURRENT (AMPS) i F T J = 17 C 4, 4, 41, 42, 44, 46 2 C C v F, INSTANTANEOUS VOTAGE (VOTS) Figure 6. Typical Forward Voltage 44, , REVERSE CURRENT ( A) I R I F(AV), AVERAGE FORWARD CURRENT (A) C C DC V R, REVERSE VOTAGE (VOTS) Figure 7. Typical Reverse Current T A, AMBIENT TEMPERATURE ( C) Figure 8. Current Derating (Mounting Method # Per Note 2) T J = 17 C Rated V R R JA = 28 C/W , AVERAGE POWER DISSIPATION (WATTS) P F(AV) (Capacitive oad) I PK I AV = I F(AV), AVERAGE FORWARD CURRENT (A) Figure 9. Power Dissipation dc 9. C, CAPACITANCE (pf) T J = 2 C 2 4 V R, REVERSE VOTAGE (VOTS) Figure. Typical Capacitance
6 4, 4, 41, 42, 44, 46 NOTE 2 AMBIENT MOUNTING DATA Data shown for thermal resistance junction to ambient (R JA ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICA VAUES FOR R JA IN STI AIR Mounting ead ength, (IN) Method 1/8 1/4 1/2 /4 Units 1 1 C/W 2 R JA C/W 28 C/W MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. É MOUNTING METHOD 2 Vector Push In Terminals T 28 É MOUNTING METHOD P.C. Board with 1 1/2 x 1 1/2 Copper Surface = 1/2 Board Ground Plane 6
7 4, 4, 41, 42, 44, 46 PACKAGE DIMENSIONS AXIA EAD CASE 267 (DO 21AD) ISSUE G D K A 1 2 NOTES: 1. DIMENSIONING AND TOERANCING PER ANSI Y14.M, CONTROING DIMENSION: INCH. B K INCHES MIIMETERS DIM MIN MAX MIN MAX A B D K STYE 1: PIN 1. CATHODE (POARITY BAND) 2. ANODE SWITCHMODE is a trademark of Semiconductor Components Industries, C. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INFORMATION ITERATURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 16, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative 42/D
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FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
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B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector - Emitter oltage CEO 65 45 dc 3 EMITTER Collector
More informationFFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A
Silicon Carbide Schottky Diode 12 V, 3 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to
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More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.oemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba
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