NCV8403, NCV8403A. Self-Protected Low Side Driver with Temperature and Current Limit. 42 V, 14 A, Single N Channel, SOT 223
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1 Self-Protected Low Side Driver with Temperature and Current Limit 2 V, A, Single NChannel, SOT223 NCV83/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Features Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dv/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits Automotive / Industrial V DSS (Clamped) Gate Input ESD Protection Temperature Limit R DS(on) TYP Overvoltage Protection Current Limit I D MAX (Limited) 2 V 3 V A 2 3 SOT223 CASE 38E STYLE 3 Drain Current Sense Source MARKING DIAGRAM DRAIN AYW xxxxx 2 3 GATE SOURCE DRAIN 2 3 DPAK CASE 369C YWW xxxxxg A = Assembly Location Y = Year W, WW = Work Week xxxxx = V83 or 83A G or = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 6 June, 6 Rev. 7 Publication Order Number: NCV83/D
2 MAXIMUM RATINGS (T J = C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V DSS 2 Vdc GatetoSource Voltage V GS Vdc Drain Current Continuous I D Internally Limited Total Power Dissipation SOT223 T A = C (Note T A = C (Note 2) Total Power Dissipation DPAK T A = C (Note T A = C (Note 2) Thermal Resistance SOT223 Version JunctiontoSoldering Point JunctiontoAmbient (Note ) JunctiontoAmbient (Note 2) Thermal Resistance DPAK Version JunctiontoSoldering Point JunctiontoAmbient (Note ) JunctiontoAmbient (Note 2) Single Pulse Inductive Load Switching Energy (V DD = Vdc, V GS =. V, I L = 2.8 A, L = mh, R G = ) P D.3.6 R JS R JA R JA R JS R JA R JA W C/W E AS 7 mj Load Dump Voltage (V GS = and V, R I = 2., R L =., t d = ms) V LD V Operating Junction Temperature T J to C Storage Temperature T stg to C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Surface mounted onto minimum pad size (.2 square) FR PCB, oz cu. 2. Mounted onto square pad size (.27 square) FR PCB, oz cu. I D + DRAIN + I G GATE VDS VGS SOURCE Figure. Voltage and Current Convention 2
3 MOSFET ELECTRICAL CHARACTERISTICS (T J = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Clamped Breakdown Voltage (V GS = Vdc, I D = 2 Adc) (V GS = Vdc, I D = 2 Adc, T J = C to C) (Note 3) Zero Gate Voltage Drain Current (V DS = 32 Vdc, V GS = Vdc) (V DS = 32 Vdc, V GS = Vdc, T J = C) (Note 3) Gate Input Current (V GS =. Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D =.2 madc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS = Vdc, I D = 3. Adc, T C) (V GS = Vdc, I D = 3. Adc, T C) (Note 3) Static DraintoSource OnResistance (Note ) (V GS =. Vdc, I D = 3. Adc, T C) (V GS =. Vdc, I D = 3. Adc, T C) (Note 3) SourceDrain Forward On Voltage (I S = 7. A, V GS = V) V (BR)DSS 2 I DSS Vdc Vdc Adc I GSS Adc V GS(th). R DS(on) R DS(on) Vdc mv/ C m m V SD.9. V SWITCHING CHARACTERISTICS (Note 3) TurnON Time (% V IN to 9% I D ) V IN = V to V, V DD = V t ON s TurnOFF Time (9% V IN to % I D ) I D =. A, Ext R G = 2. t OFF 8 TurnON Time (% V IN to 9% I D ) V IN = V to V, V DD = V, t ON TurnOFF Time (9% V IN to % I D ) I D =. A, Ext R G = 2. t OFF 6 SlewRate ON (% V DS to % V DS ) V in = to V, V DD = 2 V, dv DS /dt ON 2.3 V s SlewRate OFF (8% V DS to % V DS ) R L =.7 dv DS /dt OFF.83 SELF PROTECTION CHARACTERISTICS (T J = C unless otherwise noted) (Note ) Current Limit V GS =. V, V DS = V V GS =. V, T J = C (Note 3) Current Limit V GS = V, V DS = V V GS = V, T J = C (Note 3) I LIM. I LIM 2 8. Temperature Limit (Turnoff) V GS =. Vdc (Note 3) T LIM(off) 7 C Thermal Hysteresis V GS =. Vdc T LIM(on) C Temperature Limit (Turnoff) V GS = Vdc (Note 3) T LIM(off) 6 8 C Thermal Hysteresis V GS = Vdc T LIM(on) C GATE INPUT CHARACTERISTICS (Note 3) Device ON Gate Input Current V GS = V I D =. A I GON A 7 3 V GS = V I D =. A Current Limit Gate Input Current V GS = V, V DS = V I GCL. ma V GS = V, V DS = V.6 Thermal Limit Fault Gate Input Current V GS = V, V DS = V I GTL. ma V GS = V, V DS = V. ESD ELECTRICAL CHARACTERISTICS (T J = C unless otherwise noted) (Note 3) ElectroStatic Discharge Capability Human Body Model (HBM) ESD V ElectroStatic Discharge Capability Machine Model (MM) ESD V 3. Not subject to production testing.. Pulse Test: Pulse Width = 3 s, Duty Cycle = 2%.. Fault conditions are viewed as beyond the normal operating range of the part Adc Adc 3
4 TYPICAL PERFORMANCE CURVES ILmax (A) T Jstart = C T Jstart = C Emax (mj) T Jstart = C T Jstart = C L (mh) Figure 2. Single Pulse Maximum Switchoff Current vs. Load Inductance L (mh) Figure 3. SinglePulse Maximum Switching Energy vs. Load Inductance ILmax (A) T Jstart = C Emax (mj) T Jstart = C T Jstart = C T Jstart = C TIME IN CLAMP (ms) TIME IN CLAMP (ms) Figure. Single Pulse Maximum Inductive Switchoff Current vs. Time in Clamp Figure. SinglePulse Maximum Inductive Switching Energy vs. Time in Clamp 6 V 7 V 8 V 9 V V V DS = V C C I D (A) T a = C V V 3 V I D (A) C C V GS = 2. V V DS (V) V GS (V) Figure 6. Onstate Output Characteristics Figure 7. Transfer Characteristics
5 TYPICAL PERFORMANCE CURVES C I D = 3 A 9 8 C, V GS = V C, V GS = V R DS(on) (m ) C 7 C C R DS(on) (m ) 7 6 C, V GS = V C, V GS = V C, V GS = V C, V GS = V 3 C, V GS = V C, V GS = V V GS (V) I D (A) Figure 8. R DS(on) vs. GateSource Voltage Figure 9. R DS(on) vs. Drain Current NORMALIZED R DS(on) I D = A V GS = V V GS = V T ( C) Figure. Normalized R DS(on) vs. Temperature 6 8 I LIM (A) C C C C V DS = V V GS (V) Figure. Current Limit vs. GateSource Voltage V GS = V V DS = V C V GS = V I LIM (A) V GS = V I DSS ( A).... C C C 6 8 T J ( C) Figure 2. Current Limit vs. Junction Temperature. V DS (V) Figure 3. DraintoSource Leakage Current 3 3
6 TYPICAL PERFORMANCE CURVES.2. NORMALIZED V GS(th) (V) T ( C) Figure. Normalized Threshold Voltage vs. Temperature 6 I D =.2 ma V DS = V GS V SD (V) C C C C V GS = V I S (A) Figure. SourceDrain Diode Forward Characteristics TIME ( s) 2 3 t d(on) V DD = V I D = A R G = t d(off) t f t r DRAINSOURCE VOLTAGE SLOPE (V/ s) V DD = V I D = A R G = 6 7 dv DS /d t(on) dv DS /d t(off) 8 9 V GS (V) V GS (V) Figure 6. Resistive Load Switching Time vs. GateSource Voltage Figure 7. Resistive Load Switching DrainSource Voltage Slope vs. GateSource Voltage TIME ( s) 7 t f, V GS = V t d(on), V GS = V V DD = V I D = A t d(on), V GS = V R G ( ) t d(off), V GS = V t d(off), V GS = V t f, V GS = V t r, V GS = V t r, V GS = V Figure 8. Resistive Load Switching Time vs. Gate Resistance DRAINSOURCE VOLTAGE SLOPE (V/ s) V DD = V I D = A dv DS /d t(off), V GS = V dv DS /d t(on), V GS = V R G ( ) dv DS /d t(off), V GS = V dv DS /d t(on), V GS = V Figure 9. DrainSource Voltage Slope during Turn On and Turn Off vs. Gate Resistance 6
7 TYPICAL PERFORMANCE CURVES R JA ( C/W) 7 PCB Cu thickness,. oz R JA ( C/W) 7 PCB Cu thickness, 2. oz PCB Cu thickness,. oz PCB Cu thickness, 2. oz COPPER HEAT SPREADER AREA (mm 2 ) Figure. R JA vs. Copper Area SOT223 COPPER HEAT SPREADER AREA (mm 2 ) Figure 2. R JA vs. Copper Area DPAK R(t) C/W % Duty Cycle % % % 2% %. Single Pulse PULSE TIME (sec) Figure 22. Transient Thermal Resistance SOT223 Version R(t) C/W % Duty Cycle % % % 2% %. Single Pulse PULSE TIME (sec) Figure 23. Transient Thermal Resistance DPAK Version 7
8 TEST CIRCUITS AND WAVEFORMS RL VIN RG G D DUT VDD + S IDS Figure 2. Resistive Load Switching Test Circuit 9% VIN td(on) tr td(off) % tf 9% IDS % Figure. Resistive Load Switching Waveforms 8
9 TEST CIRCUITS AND WAVEFORMS L VIN VDS RG G D DUT + VDD tp S IDS Figure 26. Inductive Load Switching Test Circuit V VIN V T av T p V (BR)DSS I pk VDS VDD IDS V DS(on) Figure 27. Inductive Load Switching Waveforms 9
10 ORDERING INFORMATION NCV83STTG Device Package Shipping SOT223 (PbFree) / Tape & Reel NCV83STT3G NCV83DTRKG NCV83ASTTG NCV83ASTT3G NCV83ADTRKG SOT223 (PbFree) DPAK (PbFree) SOT223 (PbFree) SOT223 (PbFree) DPAK (PbFree) / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel NCV83AMNT2G (In Development) DFN6 (PbFree) 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
11 PACKAGE DIMENSIONS SOT223 (TO26) CASE 38E ISSUE N D b NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, CONTROLLING DIMENSION: INCH..8 (3) H E e A e 2 3 A b E L L C SOLDERING FOOTPRINT MILLIMETERS DIM MIN NOM MAX MIN A A b b c D E e INCHES NOM MAX e L..8 L H E STYLE 3: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN SCALE 6: mm inches
12 PACKAGE DIMENSIONS L3 E b3 2 3 A D B A DETAIL A L b2 NOTE 7 c e b SIDE VIEW TOP VIEW. (.3) M C L2 GAUGE PLANE L L DETAIL A ROTATED 9 CW H C SEATING PLANE A DPAK (SINGLE GAUGE) CASE 369C ISSUE F C c2 H Z BOTTOM VIEW ALTERNATE CONSTRUCTIONS BOTTOM VIEW SOLDERING FOOTPRINT* Z Z NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A....3 b b b c c D E e.9 BSC 2.29 BSC H L L. REF 2.9 REF L2. BSC. BSC L L.. Z SCALE 3: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCV83/D
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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