2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

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1 N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase Voltage V EBO Collector Current Continuous I C madc Total Device T A = 5 C Derate above 5 C Total Device T C = 5 C Derate above 5 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 65 P D mw mw/ C W mw/ C T J, T stg 55 to +1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO9 CASE 9 STYLE 1 BASE COLLECTOR 3 1 EMITTER STRAIGHT LEAD BULK PACK MARKING DIAGRAM N 41x AYWW BENT LEAD TAPE & REEL AMMO PACK x = 3 or 4 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping N413RLRM TO9 / Tape & Ammo *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. G TO9 (PbFree) Units / Bulk For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 8 November, 8 Rev. 4 1 Publication Order Number: N413/D

2 N413, ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) V Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = madc, I E = ) N413 (BR)CEO 5 CollectorBase Breakdown Voltage (I C = Adc, I E = ) N413 EmitterBase Breakdown Voltage (I E = Adc, I C = ) V (BR)CBO 4 V (BR)EBO Collector Cutoff Current (V CB =, I E = ) Emitter Cutoff Current (V EB = 3., I C = ) ON CHARACTERISTICS I CBO I EBO nadc nadc DC Current Gain (Note 1) (I C =. madc, V CE = ) N413 h FE (I C = madc, V CE = ) N CollectorEmitter Saturation Voltage (Note 1) (I C = madc, I B = madc) BaseEmitter Saturation Voltage (Note 1) (I C = madc, I B = madc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE =, f = MHz) N413 Input Capacitance (V EB =.5, I C =, f = MHz) CollectorBase Capacitance (I E =, V CB = V, f = MHz) V CE(sat).3 V BE(sat).95 f T C ibo 8. C cb 4. MHz pf pf SmallSignal Current Gain (I C =. madc, V CE =, R S = k, f = khz) N413 h fe 1 48 Current Gain High Frequency (I C = madc, V CE =, f = MHz) N413 h fe.5 3. (I C =. madc, V CE = V, f = khz) N413 (I C =. madc, V CE = V, f = khz) 1 48 Noise Figure (I C = Adc, V CE =, R S = k, f = khz) N413 NF 6. db 1. Pulse Test: Pulse Width = s, Duty Cycle =.%.

3 N413, 7. t s CAPACITANCE (pf) C ibo C obo REVERSE BIAS VOLTAGE (VOLTS) TIME (ns) t f V CC = 3 V I C /I B = V EB(off) =.5 V t r t d Figure 1. Capacitance Figure. Switching Times AUDIO SMALLSIGNAL CHARACTERISTICS NOISE FIGURE (V CE = 5, T A = 5 C) Bandwidth = Hz 1 SOURCE RESISTANCE = I C = 1 ma 14 1 f = 1 khz I C = 1 ma NF, NOISE FIGURE (db) SOURCE RESISTANCE = I C =.5 ma SOURCE RESISTANCE = 1 k I C = A NF, NOISE FIGURE (db) I C =.5 ma I C = A I C = A.1 SOURCE RESISTANCE = I C = A f, FREQUENCY (khz) Figure 3. Frequency Variations R S, SOURCE RESISTANCE (k ) Figure 4. Source Resistance 3

4 N413, h PARAMETERS (V CE = V, f = 1 khz, T A = 5 C) hfe, CURRENT GAIN 7 h oe, OUTPUT ADMITTANCE ( mhos) Figure 5. Current Gain Figure 6. Output Admittance, INPUT IMPEDANCE (k Ω ) h ie Figure 7. Input Impedance h, VOLTAGE FEEDBACK RATIO (X -4 re ) Figure 8. Voltage Feedback Ratio STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) T J = +15 C V CE = 1 V +5 C - 55 C Figure 9. DC Current Gain 4

5 N413, V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C = 1 ma T J = 5 C ma ma ma I B, BASE CURRENT (ma) Figure. Collector Saturation Region V, VOLTAGE (VOLTS) T J = 5 C V I C /I B = V I C /I B =. V V CE = 1 V V, TEMPERATURE COEFFICIENTS (mv/ C) θ VC for V CE(sat) VB for V BE(sat) C to +15 C - 55 C to +5 C - 55 C to +5 C +5 C to +15 C Figure 11. On Voltages Figure 1. Temperature Coefficients 5

6 N413, PACKAGE DIMENSIONS TO9 (TO6) CASE 911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A B C D X X D G H G J H J K V C L N SECTION XX R N V P R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A B C D.4.54 G.4.8 J.39. K N.4.66 P R V STYLE 1: PIN 1. EMITTER. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 817 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your loca Sales Representative N413/D

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