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1 Is Now Par of To learn more abou ON Semiconducor, please visi our websie a ON Semiconducor and he ON Semiconducor logo are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor or is subsidiaries in he Unied Saes and/or oher counries. ON Semiconducor owns he righs o a number of paens, rademarks, copyrighs, rade secres, and oher inellecual propery. A lising of ON Semiconducor s produc/paen coverage may be accessed a ON Semiconducor reserves he righ o make changes wihou furher noice o any producs herein. ON Semiconducor makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does ON Semiconducor assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Buyer is responsible for is producs and applicaions using ON Semiconducor producs, including compliance wih all laws, regulaions and safey requiremens or sandards, regardless of any suppor or applicaions informaion provided by ON Semiconducor. Typical parameers which may be provided in ON Semiconducor daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. ON Semiconducor does no convey any license under is paen righs nor he righs of ohers. ON Semiconducor producs are no designed, inended, or auhorized for use as a criical componen in life suppor sysems or any FA Class 3 medical devices or medical devices wih a same or similar classificaion in a foreign jurisdicion or any devices inended for implanaion in he human body. Should Buyer purchase or use ON Semiconducor producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold ON Semiconducor and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha ON Semiconducor was negligen regarding he design or manufacure of he par. ON Semiconducor is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner.
2 Sepember 997 NP62P / NB62P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process has been especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes. These devices are paricularly suied for low volage applicaions such as auomoive, C/C converers, PWM moor conrols, and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed. -24 A, -2 V. =.5 V GS = -4.5 V. V GS = -2.7 V. =.75 V GS = -2.5 V. Criical C elecrical parameers specified a elevaed emperaure. Rugged inernal source-drain diode can eliminae he need for an exernal Zener diode ransien suppressor. 75 C maximum juncion emperaure raing. High densiy cell design for exremely low. TO-22 and TO-263 ( 2 PAK) package for boh hrough hole and surface moun applicaions. S G Absolue Maximum Raings T C = 25 C unless oherwise noed Symbol Parameer NP62P NB62P Unis V SS rain-source Volage -2 V V GSS Gae-Source Volage - Coninuous ±8 V I rain Curren - Coninuous -24 A - Pulsed -7 P Toal Power T C = 25 C 6 W erae above 25 C.4 W/ C T J,T STG Operaing and Sorage Temperaure Range -65 o 75 C 997 Fairchild Semiconducor Corporaion NP62P Rev.C
3 Elecrical Characerisics (T C = 25 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = -25 µa -2 V I SS Zero Gae Volage rain Curren V S = -6 V, V GS = V - µa T J = 55 C µa I GSSF Gae - Body Leakage, Forward V GS = 8 V, V S = V na I GSSR Gae - Body Leakage, Reverse V GS = -8 V, V S = V na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = -25 µa V T J = 25 C Saic rain-source On-Resisance V GS = -4.5 V, I = -2 A.4.5 Ω T J = 25 C.6.8 Saic rain-source On-Resisance V GS = -2.7 V, I = A.59.7 Saic rain-source On-Resisance V GS = -2.5 V, I = A I (on) On-Sae rain Curren V GS = -4.5 V, V S = -5 V -24 A g FS Forward Transconducance V S = -5 V, I = -2 A 4 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = V, V GS = V, 59 pf C oss Oupu Capaciance f =. MHz 725 pf C rss Reverse Transfer Capaciance 25 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = -2 V, I = -3 A, 5 3 ns r Turn - On Rise Time V GS = -5 V, R GEN = 6 Ω 27 6 ns (off) Turn - Off elay Time 2 25 ns f Turn - Off Fall Time 7 5 ns Q g Toal Gae Charge V S = V, nc Q gs Gae-Source Charge I = -24 A, V GS = -5 V 5 nc Q gd Gae-rain Charge nc NP62P Rev.C
4 Elecrical Characerisics (T C = 25 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS I S Maximum Coninuous rain-source iode Forward Curren -24 A I SM Maximum Pulsed rain-source iode Forward Curren -8 A V S rain-source iode Forward Volage V GS = V, I S = -2 A (Noe ) V Reverse Recovery Time V GS = V, I F = -24 A, 6 ns rr di F /d = A/µs I Reverse Recovery Curren -.7 A rr THERMAL CHARACTERISTICS R θjc Thermal Resisance, Juncion-o-Case 2.5 C/W R θja Thermal Resisance, Juncion-o-Ambien 62.5 C/W Noe:. Pulse Tes: Pulse Widh < 3 µs, uy Cycle < 2.%. NP62P Rev.C
5 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V GS = -5.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -2.5 V V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) -4-5 Figure. On-Region Characerisics. Figure 2. On-Resisance Variaion wih Gae Volage and rain Curren. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -2A V GS =-4.5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE 2.5 V GS = -4.5V T = 25 C J 25 C -55 C T, JUNCTION TEMPERATURE ( C) J I, RAIN CURRENT (A) -4-5 Figure 3. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) V = -5V S T = -55 C J 25 C 25 C V GS(h), NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S = V GS I = -25µA V, GATE TO SOURCE VOLTAGE (V) GS T, JUNCTION TEMPERATURE ( C) J Figure 5. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NP62P Rev.C
6 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -25µA T J, JUNCTION TEMPERATURE ( C) -I, REVERSE RAIN CURRENT (A) V GS = V T = 25 C J 25 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure. Figure 8. Body iode Forward Volage Variaion wih Curren and Temperaure. CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss V, RAIN TO SOURCE VOLTAGE (V) S -V, GATE-SOURCE VOLTAGE (V) GS I = -24A V = -5V S -5V V Q, GATE CHARGE (nc) g Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. -V d(on) on r d(off) off f V IN R L 9% 9% V GS V OUT V OUT % % R GEN G UT 9% V IN 5% 5% S % PULSE WITH INVERTE Figure. Swiching Tes Circui. Figure 2. Swiching Waveforms. NP62P Rev.C
7 Typical Elecrical Characerisics (coninued) g FS, TRANSCONUCTANCE (SIEMENS) V S = - 5V -5-5 I, RAIN CURRENT (A) T = -55 C J 25 C 25 C I, RAIN CURRENT (A) 6 3 RS(ON) LIMIT ms ms ms 5 V GS = -4.5V 3 SINGLE PULSE 2 R θjc = 2.5 C/W AT C = 25 C C - V, RAIN-SOURCE VOLTAGE (V) S µs Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. Maximum Safe Operaing Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse P(pk) R θjc () = r() * R θjc R θjc = 2.5 C/W 2 T J - T = P * R () C θjc uy Cycle, = / 2...,TIME (ms) Figure 5. Transien Thermal Response Curve. NP62P Rev.C
8 ON Semiconducor and are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor or is subsidiaries in he Unied Saes and/or oher counries. ON Semiconducor owns he righs o a number of paens, rademarks, copyrighs, rade secres, and oher inellecual propery. A lising of ON Semiconducor s produc/paen coverage may be accessed a Marking.pdf. ON Semiconducor reserves he righ o make changes wihou furher noice o any producs herein. ON Semiconducor makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does ON Semiconducor assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Buyer is responsible for is producs and applicaions using ON Semiconducor producs, including compliance wih all laws, regulaions and safey requiremens or sandards, regardless of any suppor or applicaions informaion provided by ON Semiconducor. Typical parameers which may be provided in ON Semiconducor daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. ON Semiconducor does no convey any license under is paen righs nor he righs of ohers. ON Semiconducor producs are no designed, inended, or auhorized for use as a criical componen in life suppor sysems or any FA Class 3 medical devices or medical devices wih a same or similar classificaion in a foreign jurisdicion or any devices inended for implanaion in he human body. Should Buyer purchase or use ON Semiconducor producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold ON Semiconducor and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha ON Semiconducor was negligen regarding he design or manufacure of he par. ON Semiconducor is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Lieraure isribuion Cener for ON Semiconducor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com Semiconducor Componens Indusries, LLC N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:// For addiional informaion, please conac your local Sales Represenaive
9 Mouser Elecronics Auhorized isribuor Click o View Pricing, Invenory, elivery & Lifecycle Informaion: Fairchild Semiconducor: NP62P
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