NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor

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June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using

These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen, porable elecronics, and oher baery powered circuis where fas high-side swiching, and low

1 June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen, porable elecronics, and oher baery powered circuis where fas high-side swiching, and low in-line power loss are needed in a very small ouline surface moun package. - A, - V, R S(ON) =.4 V GS = -.7 V R S(ON) =.3 V GS = -4.5 V. Very low level gae drive requiremens allowing direc operaion in 3V circuis. V GS(h) <.V. Proprieary package design using copper lead frame for superior hermal and elecrical capabiliies. High densiy cell design for exremely low R S(ON). Excepional on-resisance and maximum C curren capabiliy. Compac indusry sandard SOT-3 surface Moun package. G S A solue Maximum Raings T A = 5 C unless oherwise noed Symbol Parameer NS33P Unis V SS rain-source Volage - V V GSS Gae-Source Volage - Coninuous ±8 V I rain Curren - Coninuous (Noe a) - A - Pulsed - P Maximum Power issipaion (Noe a).5 W (Noe b).46 T J,T STG Operaing and Sorage Temperaure Range -55 o 5 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a) 5 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) 75 C/W 997 Fairchild Semiconducor Corporaion NS33P Rev. E

2 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = -5 µa - V I SS Zero Gae Volage rain Curren V S = -6 V, V GS = V - µa T J = 55 C - µa I GSS Gae - Body Leakage Curren V GS = 8 V, V S = V na I GSS Gae - Body Leakage Curren V GS = -8 V, V S = V - na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = -5 µa V T J =5 C R S(ON) Saic rain-source On-Resisance V GS = -.7 V, I = - A.35.4 Ω T J =5 C.5.74 V GS = -4.5 V, I = -. A.6.3 I (ON) On-Sae rain Curren V GS = -.7 V, V S = -5 V -.5 A V GS = -4.5 V, V S = -5 V g FS Forward Transconducance V S = -5 V, I = - A. S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = - V, V GS = V, 95 pf C oss Oupu Capaciance f =. MHz 5 pf C rss Reverse Transfer Capaciance 4 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = -6 V, I = - A, 8 5 ns r Turn - On Rise Time V GS = -4.5 V, R GEN = 6 Ω 3 45 ns (off) Turn - Off elay Time 5 45 ns f Turn - Off Fall Time 7 45 ns Q g Toal Gae Charge V S = -5 V, I = - A, nc Q gs Gae-Source Charge V GS = -4.5 V.5 nc Q gd Gae-rain Charge.9 nc NS33P Rev. E

3 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous Source Curren -.4 A V S rain-source iode Forward Volage V GS = V, I S = -.4 A (Noe ) V Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = T J T A = T J T A = I R θja () R θjc +R θca () () R S(ON)@TJ Typical R θja using he board layous shown below on 4.5"x5" FR-4 PCB in a sill air environmen: a. 5 o C/W when mouned on a. in pad of oz copper. b. 7 o C/W when mouned on a. in pad of oz copper. a b Scale : on leer size paper. Pulse Tes: Pulse Widh < 3µs, uy Cycle <.%. NS33P Rev. E

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V GS = -4.5V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =-.V V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) -3 Figure. On-Region Characerisics. Figure. On-Resisance Variaion wih rain Curren and Gae Volage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -A V GS = -.7 R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -.7 V T J= 5 C 5 C -55 C T, JUNCTION TEMPERATURE ( C) J I, RAIN CURRENT (A) -3 Figure 3. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) V S = - 3V T = -55 C J -.5 V, GATE TO SOURCE VOLTAGE (V) GS 5 C C - V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE (V) V S = VGS I = -5µA T J, JUNCTION TEMPERATURE ( C) Figure 5. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NS33P Rev.E

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -5µA T J, JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Volage Variaion wih Temperaure. -I, REVERSE RAIN CURRENT (A)..5.. V =V GS T = 5 C J 5 C -55 C...4 -V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. Body iode ForwardVolageVariaion wih Source Curren and Temperaure. CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss -V GS, GATE-SOURCE VOLTAGE (V) I = -A V = -5V S -5V -V V, RAIN TO SOURCE VOLTAGE (V) S Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. V IN V R L d(on) on r 9% d(off) off 9% f V GS V OUT V OUT % % R GEN G UT 9% S V IN % 5% 5% PULSE WITH INVERTE Figure. Swiching Tes Circui. Figure. Swiching Waveforms. NS33PRev. E

6 Typical Elecrical Characerisics (coninued) g, TRANSCONUCTANCE (SIEMENS) FS 4 V S =- 5V T = -55 C J 5 C 5 C I, RAIN CURRENT (A) -3 -I, RAIN CURRENT (A) RS(ON) LIMIT V GS = -.7V SINGLE PULSE R θja = See Noe b T A = 5 C s C ms V S, RAIN-SOURCE VOLTAGE (V) s ms ms Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. Maximum Safe Operaing Area. STEAY-STATE POWER ISSIPATION (W).4 b a. 4.5"x5" FR-4 Board o T A = 5 C Sill Air oz COPPER MOUNTING PA AREA (in ) -I, STEAY-STATE RAIN CURRENT (A).4. b a 4.5"x5" FR-4 Board o T A = 5 C Sill Air V = -.7V GS oz COPPER MOUNTING PA AREA (in ) Figue 5. SuperSOT TM _ 3 Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. Figure 6. Maximum Seady-Sae rain Curren versus Copper Mouning Pad Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse R θja () = r() * R θja R θja = See Noe b T J - T A = P * R θja () uy Cycle, = / , TIME (sec) P(pk) Figure 7. Transien Thermal Response Curve. Noe : Characerizaion performed using he condiions described in noe b. Transien hermal response will change depending on he circui board design. NS33PRev. E

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NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's