FDP5800 N-Channel Logic Level PowerTrench MOSFET

Size: px

Start display at page:

Download "FDP5800 N-Channel Logic Level PowerTrench MOSFET"

Kathryn Greer
5 years ago
Views:

1 FP5800 N-Channel Logic Level PowerTrench MOFET 60V,80A, 6mΩ Features R (on) = 4.6mΩ (Typ.), V G = 10V, I = 80A High performance trench technology for extermly low Rdson Low gate Charge High power and current handing capability RoHs Compliant G TO-220 FP eries Applications Motor/ Body Load Control Power Train Management Injection ystems C-AC Converters and UP G November 2006 tm MOFET Maximum Ratings T C = 25 C unless otherwise noted* ymbol Parameter Ratings Units V rain-ource Voltage 60 V V G Gate-ource Voltage ±20 V -Continuous (T C = 25 o C) 80 A I rain Curr ent -Continuous (T C = o C) 80* A -Continuous (T A = 25 o C) 14 A I M rain Current - Pulsed 320 A E A ingle Pulsed Avalanche Energy (Note 1) 652 mj P Power issipation (T C = 25 o C) - erate above 25 o C T J, T TG Operating and torage Temperature Range -55 to +175 C *rain current limited by package Thermal Characteristics R θjc Thermal Resistance, Junction to Case 0.62 C/W R θja Thermal Resistance, Junction to Ambient, 1in 2 copper pad area 43 C/W R θja Thermal Resistance, Junction to Ambient 62.5 C/W Package Marking and Ordering Information evice Marking evice Package Reel ize Tape Width Quantity FP5800 FP5800 TO W W/ C 2006 Fairchild emiconductor Corporation 1

2 Electrical Characteristics T C = 25 C unless otherwise noted ymbol Parameter Conditions Min Typ Max Units Off Characteristics B V rain-ource Breakdown Voltage I = 250µA, V G = 0V, T J =25 o C V V I Zero Gate Voltage rain Current = 48V µa V G = 0V T J = 150 C µa I G Gate-Body Leakage Current, Forward V G = ±20V, V = 0V ± na On Characteristics V G(th) Gate Threshold Voltage V G = V, I = 250µA V R (on) tatic rain-ource On Resistance ynamic Characteristics witching Characteristics (V G = 10V) V G = 10V, I = 80A mω V G =4.5V, I = 80A mω V G = 5V, I = 80A mω V G =10V, I = 80A T J = 175 o C mω C iss Input Capacitance pf V = 15V,V G = 0V C oss Output Capacitance pf f = 1MHz C rss Reverse Transfer Capacitance pf R G Gate Resistance V G = 0.5V, f = 1MHz Ω Q g(tot) Total Gate Charge at 10V V G = 0V to 10V nc Q g(th) Total Gate Charge at 5V V G = 0V to 5V nc V = 30V Q g(th) Threshold Gate Charge V G = 0V to 1V nc I = 80A Q gs Gate to ource Gate Charge I g = 1mA nc Q gs2 Gate Charge Threshold to Plateau nc Q gd Gate to rain Miller Charge nc t ON Turn-On Time ns t d(on) Turn-On elay Time ns t V = 30V, I = 80A r Turn-On Rise Time ns V G = 10V, R GEN = 1.5Ω t d(off) Turn-Off elay Time ns t f Turn-Off Fall Time ns t OFF Turn-Off Time ns rain-ource iode Characteristics V rain-ource iode Forward Voltage V G = 0V, I = 80A V V G = 0V, I = 40A V t rr Reverse Recovery Time V G = 0V, I = 60A ns Q rr Reverse Recovery Charge di F /dt = A/µs nc Notes: 1: L = 1mH, I A = 36A, V = 54V, V G = 10V, R G = 25Ω, tarting T J = 25 o C 2

3 Typical Performance Characteristics R(ON) [mω], I,rain Current[A] Figure 1. On-Region Characteristics µs Pulse Test 2. T C = 25 o C V G Top : 10.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V V,rain-ource Voltage[V] 3 Figure 2. Transfer Characteristics V G,Gate-ource Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body iode Forward Voltage rain Current and Gate Voltage Variation vs. ource Current and Temperatue rain-ource On-Resistance V G = 10V V G = 20V I,rain Current[A] I, Reverse rain Current [A] V = 6V 150 o C 0 VG = 0V o C 25 o C -55 o C 25 o C * Note : T J = 25 o C I, rain Current [A] V, Body iode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd V, rain-ource Voltage [V] * Note: 1. V G = 0V 2. f = 1MHz VG, Gate-ource Voltage [V] Figure 6. Gate Charge Characteristics V = 25V V = 35V V = 50V * Note : I = 80A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BV, [Normalized] rain-ource Breakdown Voltage V G = 0V 2. I = 250µA T J, Junction Temperature [ o C] Figure 9. Maximum afe Operating Area I, rain Current [A] µs µs Operation in This Area 1ms 10 1 is Limited by R (on) 10ms 1. T C = 25 o C C 2. T J = 175 o C 3. ingle Pulse V, rain-ource Voltage [V] r(on), [Normalized] rain-ource On-Resistance Figure 8. On-Resistance Variation vs. Temperature V G = 10V 2. I = 80A T J, Junction Temperature [ o C] Figure 10. Maximum rain Current vs. Case Temperature I, rain Current [A] CURRENT LIMITE BY PACKAGE T C, Case Temperature [ o C] 1 Figure 11. Transient Thermal Response Curve = 0.5 ZθJC(t),Thermal Response ingle pulse 1. Z θjc (t) = 0.62 o C/W Max. 2. uty Factor, =t 1 /t 2 3. T JM - T C = P M * Z θjc (t) 1E t 1, quare Wave Pulse uration [sec] P M t 1 t 2 4

5 Gate Charge Test Circuit & Waveform Resistive witching Test Circuit & Waveforms Unclamped Inductive witching Test Circuit & Waveforms 5

6 V G ( riv e r ) Peak iode Recovery dv/dt Test Circuit & Waveforms U T + I V _ L r iv e r R G a m e T y p e a s U T V G d v / d t c o n t r o lle d b y R G I c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h = G a t e P u ls e P e r io d V 1 0 V I F M, B o d y io d e F o r w a r d C u r r e n t I ( U T ) d i/ d t I R M B o d y io d e R e v e r s e C u r r e n t V ( U T ) B o d y io d e R e c o v e r y d v / d t V V B o d y io d e F o r w a r d V o lt a g e r o p 6

7 Mechanical imensions (1.70) ± ± ±0.10 (1.46) (1.00) 1.27 ± ±0.20 (8.70) ø3.60 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 TO ± ± ± MAX ± TYP [2.54 ±0.20] 0.80 ± TYP [2.54 ±0.20] ± ±0.20 7

8 TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROVOLT OME EcoPARK E 2 CMO Enigna FACT FAT FATr FP FRFET FACT Quiet eries GlobalOptoisolator GTO HieC I 2 C i-lo Impliedisconnect IntelliMAX IOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MX MXPro Across the board. Around the world. The Power Franchise Programmable Active roop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge Poweraver PowerTrench QFET Q QT Optoelectronics Quiet eries RapidConfigure RapidConnect µeres calarpump ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. ILENT WITCHER MART TART PM tealth uperfet uperot -3 uperot -6 uperot -8 yncfet TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative or In This datasheet contains the design specifications for esign product development. pecifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21 8

FDS V P-Channel PowerTrench MOSFET

FDS V P-Channel PowerTrench MOSFET F4685 4V P-Channel PowerTrench MOFET Features 8. A, 4 V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G = 4.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and