FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

Transcription

1 F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low r (on) High power and current handling capability Termination is Lead-free and RoH compliant April 9 General escription This P-Channel MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. F35BZ P-Channel PowerTrench MOFET 5 3 G Pin G 7 8 O-8 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage - V V G Gate to ource Voltage ±5 V rain Current -Continuous T I A = 5 C (Note a) Pulsed -5 A Power issipation T A = 5 C (Note a).5 P Power issipation T A = 5 C (Note b). W E A ingle Pulse Avalanche Energy (Note ) mj T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R JC Thermal Resistance, Junction to Case 5 R JA Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity F35BZ F35BZ O-8 3 mm 5units 9 Fairchild emiconductor Corporation F35BZ Rev.C

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = -5 A, V G = V - V BV Breakdown Voltage Temperature T J Coefficient I = -5 A, referenced to 5 C - mv/ C I Zero Gate Voltage rain Current V = -V, V G = V A I G Gate to ource Leakage Current V G = ±5V, V = V ± A On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = -5 A V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = -5 A, referenced to 5 C mv/ C V G = -V, I = -8.8A r (on) tatic rain to ource On Resistance V G = -.5V, I = -.7A 35 m V G = -V, I = -8.8A, T J = 5 C 8 g F Forward Transconductance V = -5V, I = -8.8A ynamic Characteristics C iss Input Capacitance pf V = -5V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 35 pf R g Gate Resistance f = MHz.5 F35BZ P-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time ns V = -5V, I = -8.8A, t r Rise Time ns V G = -V, R GEN = t d(off) Turn-Off elay Time 8 ns t f Fall Time ns Q g Total Gate Charge V G = V to -V 8 nc V = -5V, Q g Total Gate Charge V G = V to -5V 3 nc I = -8.8A Q gs Gate to ource Charge 5. nc Q gd Gate to rain Miller Charge 7. nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I = -8.8A (Note ) V t rr Reverse Recovery Time 9 ns I F = -8.8A, di/dt = A/ s Q rr Reverse Recovery Charge 3 35 nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < s, uty cycle <.%. 3. The diode connected between the gate and source serves only as protection against E. No gate overvoltage rating is implied.. tarting T J = 5 C, L = mh, I A = -7A, V = -V, V G = -V 9 Fairchild emiconductor Corporation F35BZ Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 5 PULE URATION = 8 s UTY CYCLE =.5%MAX 3 Figure V G = -V V G = -5V V G = -.5V V G = -V V G = -3.5V -V, RAIN TO OURCE VOLTAGE (V) I = -8.8A V G = -V.5 5 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) NORMALIZE RAIN TO OURCE ON-REITANCE r(on), RAIN TO OURCE ON-REITANCE (m ) V G = -3.5V V G = -V V G = -V PULE URATION = 8 s UTY CYCLE =.5%MAX -I, RAIN CURRENT(A) I = -8.8A V G = -.5V V G = -5V PULE URATION = 8 s UTY CYCLE =.5%MAX 8 -V G, GATE TO OURCE VOLTAGE (V) F35BZ P-Channel PowerTrench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage -I, RAIN CURRENT (A) 5 PULE URATION = 8 s UTY CYCLE =.5%MAX V = -5V T J = 5 o C T J =-55 o C 3 5 -V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics -I, REVERE RAIN CURRENT (A)... V G = V T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure. ource to rain iode Forward Voltage vs ource Current 9 Fairchild emiconductor Corporation F35BZ Rev.C 3

4 Typical Characteristics T J = 5 C unless otherwise noted -VG, GATE TO OURCE VOLTAGE(V) -IA, AVALANCHE CURRENT(A) 8 I = -8.8A Figure 7. V = -5V V = -V Q g, GATE CHARGE(nC) V = -V f = MHz V G = V. -V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -Ig, GATE LEAKAGE CURRENT(A) V = V C iss C oss C rss V G, GATE TO OURCE VOLTAGE(V) F35BZ P-Channel PowerTrench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Gate Leakage Current vs Gate to ource Voltage -I, RAIN CURRENT (A) 8 V G = -V V G = -.5V R JA = 5 o C/W I, RAIN CURRENT (A). THI AREA I LIMITE BY r (on) INGLE PULE T J = MAX RATE R JA = 5 o C/W T A =5 o C.. us ms ms ms s s C 8 T A, AMBIENT TEMPERATURE ( o C) -V, RAIN to OURCE VOLTAGE (V) Figure. Maximum Continuous rain Current vs Ambient Temperature Figure. Forward Bias afe Operating Area 9 Fairchild emiconductor Corporation F35BZ Rev.C

5 Typical Characteristics T J = 5 C unless otherwise noted P (PK), PEAK TRANIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z JA V G = - V t, PULE WITH (s) Figure 3. ingle Pulse Maximum Power issipation UTY CYCLE-ECENING ORER = INGLE PULE R JA = 5 o C/W T A = 5 o C. INGLE PULE t t R JA = 5 o NOTE: C/W UTY FACTOR: = t /t PEAK T J = P M x Z JA x R JA + T A t, RECTANGULAR PULE URATION (sec) P M F35BZ P-Channel PowerTrench MOFET Figure. Transient Thermal Response Curve 9 Fairchild emiconductor Corporation F35BZ Rev.C 5