Features. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. T A=25 o C unless otherwise noted

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F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been

1 F77A N-Channel Logic Level PowerTrench MOFET January F77A General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications C/C converter Load switch Motor drives Features 5 A, 3 V. R (ON) = 5.5 V G = V R (ON) = V G = 4.5 V. Low gate charge (37nC typical) Fast switching speed. High performance trench technology for extremely low R (ON). High power and current handling capability O- G 7 Absolute Maximum Ratings T A=5 o C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 3 V V G Gate-ource Voltage ± V I rain Current Continuous (Note a) 5 A P Pulsed Power issipation for ingle Operation (Note a).5 (Note b). (Note c) T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note c) 5 ( sec) C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 3 C/W Package Outlines and Ordering Information evice Marking evice Reel ize Tape Width Quantity F77A F77A 3 mm 5 units W Fairchild emiconductor Corporation F77A Rev (W)

2 MO Electrical Characteristics T A = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units rain-ource Avalanche Ratings (Note ) W I AR ingle Pulse rain-ource Avalanche Energy Maximum rain-ource Avalanche Current V = 5 V, I = 5 A 3 mj 5 A Off Characteristics BV rain ource Breakdown Voltage V G = V, I = 5 µa 3 V BV T J Breakdown Voltage Temperature Coefficient I = 5 µa, Referenced to 5 C 4 mv/ C I Zero Gate Voltage rain Current V = 4 V, V G = V µa I GF Gate Body Leakage, Forward V G = V, V = V na I GR Gate Body Leakage, Reverse V G = V V = V na F77A On Characteristics (Note ) V G(th) Gate Threshold Voltage V = V G, I = 5 µa. 3 V VG(th) T J R (on) Gate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 5 µa, Referenced to 5 C -5 mv/ C V G = V, I = 5 A V G = V, I = 5 A, T J = 5 C V G = 4.5 V, I = 3 A I (on) On tate rain Current V G = V, V = 5 V 5 A g F Forward Transconductance V = V, I = 5 A 5 ynamic Characteristics C iss Input Capacitance V = 5 V, V G = V, 354 pf C oss Output Capacitance f =. MHz 3 pf C rss Reverse Transfer Capacitance witching Characteristics (Note ) mω 37 pf t d(on) Turn On elay Time V = 5 V, I = A, 3 ns t r Turn On Rise Time V G = V, R GEN = Ω 9 ns t d(off) Turn Off elay Time 7 5 ns t f Turn Off Fall Time 3 5 ns Q g Total Gate Charge V = 5 V, I = 5 A, nc Q gs Gate ource Charge V G = 5 V nc Q gd Gate rain Charge nc rain ource iode Characteristics and Maximum Ratings I Maximum Continuous rain ource iode Forward Current. A V Notes: rain ource iode Forward Voltage V G = V, I =. A (Note ).7. V. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 /W when mounted on a in pad of oz copper b) 5 /W when mounted on a.4 in pad of oz copper c) 5 /W when mounted on a minimum pad.. Test: Pulse Width < 3µs, uty Cycle <.% F77A Rev (W)

3 Typical Characteristics I, RAIN CURRENT (A) V G = V 4.V V 4 3.V 3.5V R (ON), NORMALIZE RAIN-OURCE ON-REITANCE...4. V G = 4.V 4.5V 5.V.V 7.V V F77A.5.5 V, RAIN-OURCE VOLTAGE (V) I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R (ON), NORMALIZE RAIN-OURCE ON-REITANCE..4.. I = 9A V G = V R (ON), ON-REITANCE (OHM) T A = 5 o C T A = 5 o C I = 7.5 A TJ, JUNCTION TEMPERATURE ( o C) 4 VG, GATE TO OURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-ource Voltage. I, RAIN CURRENT (A) V = 5V T A = -55 o C 7 5 o C 5 o C VG, GATE TO OURCE VOLTAGE (V) I, REVERE RAIN CURRENT (A) V G = V T A = 5 o C 5 o C. -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure. Body iode Forward Voltage Variation with ource Current and Temperature. F77A Rev (W)

4 Typical Characteristics V G, GATE-OURCE VOLTAGE (V) I = 7.5A 4 V = 5V 5V V CAPACITANCE (pf) C I C O C R f = MHz V G = V F77A Qg, GATE CHARGE (nc) V, RAIN TO OURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. I, RAIN CURRENT (A). R (ON) LIMIT V G = V R θja = 5 o C/W TA = 5 o C... C ms ms s s V, RAIN-OURCE VOLTAGE (V) ms µs P(pk), PEAK TRANIENT POWER (W) t, TIME (sec) RθJA = 5 C/W TA = 5 C Figure 9. Maximum afe Operating Area. Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE... = t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. R θja(t) = r(t) + R θja R θja = 5 C/W P(pk) t t T J - T A = P * R θja(t) uty Cycle, = t / t F77A Rev (W)

5 TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROVOLT ensetrench OME EcoPARK E CMO TM Enigna TM FACT FACT Quiet eries TAR*POWER is used under license ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT TATU EFINITION efinition of Terms FAT FATr FRFET GlobalOptoisolator GTO HieC IOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerTrench QFET Q QT Optoelectronics Quiet eries ILENT WITCHER MART TART TAR*POWER tealth uperot -3 uperot - uperot - yncfet TinyLogic TruTranslation UHC UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product tatus efinition VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units F94 ingle N-Channel Enhancement Mode Field Effect Transistor April F94 General escription This N-Channel Logic Level MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has