V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

Size: px

Start display at page:

Download "V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor"

Emory Underwood
6 years ago
Views:

1 P C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify esign, (See App. Note AN0) l Fully Characterized Avalanche Voltage and Current S S S G Top View A SO-8 Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 0 V V GS Gate-to-Source Voltage ± 20 T A = 25 C Continuous rain Current, V V 7.3 A T A = 0 C Continuous rain Current, V V 4.6 I M Pulsed rain Current c 58 A = 25 C Maximum Power issipation 2.5 W Linear erating Factor 0.02 W/ C dv/dt Peak iode Recovery dv/dt h 7.3 V/ns T J Operating Junction and -55 to + 50 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 C/W R θja Junction-to-Ambient (PCB Mount) e 50 Notes through are on page /2/06

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)SS rain-to-source Breakdown Voltage 0 V V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0. V/ C R S(on) Static rain-to-source On-Resistance 8 22 mω V GS(th) Gate Threshold Voltage V I SS rain-to-source Leakage Current 20 µa 250 I GSS Gate-to-Source Forward Leakage 200 na Gate-to-Source Reverse Leakage -200 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance S V S = 25V, I = 4.4A Q g Total Gate Charge 34 5 I = 4.4A Q gs Gate-to-Source Charge 6.3 nc V S = 50V Q gd Gate-to-rain ("Miller") Charge.7 V GS = V f t d(on) Turn-On elay Time 8.7 V = 50V t r Rise Time 3 I = 4.4A t d(off) Turn-Off elay Time ns R G = 6.2Ω t f Fall Time 36 V GS = V f C iss Input Capacitance 530 V GS = 0V C oss Output Capacitance 250 V S = 25V C rss Reverse Transfer Capacitance pf ƒ =.0MHz C oss Output Capacitance 980 V GS = 0V, V S =.0V, ƒ =.0MHz C oss Output Capacitance 60 V GS = 0V, V S = 80V, ƒ =.0MHz C oss eff. Effective Output Capacitance 240 V GS = 0V, V S = 0V to 80V g Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energyd 80 mj I AR Avalanche Currentc 4.4 A iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 2.3 Conditions V GS = 0V, I = 250µA Reference to 25 C, I = ma V GS = V, I = 4.4A f V S = V GS, I = 250µA V S = 0V, V GS = 0V V S = 80V, V GS = 0V, T J = 25 C V GS = 20V V GS = -20V Conditions MOSFET symbol (Body iode) A showing the G I SM Pulsed Source Current 58 integral reverse S (Body iode)c p-n junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 4.4A, V GS = 0V f t rr Reverse Recovery Time 42 ns T J = 25 C, I F = 4.4A, V = 25V Q rr Reverse Recovery Charge 73 nc di/dt = 0A/µs f t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+L) 2

3 I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) 0 4.5V VGS TOP 5V V 8.0V 5.0V BOTTOM 4.5V 0 4.5V VGS TOP 5V V 8.0V 5.0V BOTTOM 4.5V 20µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 50 C I = 7.3A V GS = V.5 T J = 25 C.0 0. V S = 50V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 I S, Reverse rain Current (A) I, rain-to-source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd I = 4.4A V S = 80V V S = 50V V S = 20V 00 C iss 6.0 C oss C rss V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S (on).00 T J = 50 C µsec T J = 25 C 0. V GS = 0V V S, Source-to-rain Voltage (V) 0. T A = 25 C Tj = 50 C Single Pulse msec msec V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

I, rain Current (A) Thermal Response ( Z thja ) 8 7 V S R 6 R G V GS.U.T. 5 + - V 4 3 V Pulse Width µs uty Factor 0. % 2 Fig a.

5 I, rain Current (A) Thermal Response ( Z thja ) 8 7 V S R 6 R G V GS.U.T V 4 3 V Pulse Width µs uty Factor 0. % 2 Fig a. Switching Time Test Circuit T A, Ambient Temperature ( C) Fig 9. Maximum rain Current vs. Ambient Temperature V S 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 = SINGLE PULSE ( THERMAL RESPONSE ) E-006 E t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 E AS, Single Pulse Avalanche Energy (mj) R S (on), rain-to-source On Resistance (mω) R S(on), rain-to -Source On Resistance (m Ω) I = 4.4A V GS = V T J = 25 C I, rain Current (A) V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. rain Current Fig 3. On-Resistance vs. Gate Voltage 0 K UT Q G L V GS VCC Q GS Q G V G Charge I TOP 2.0A 3.5A BOTTOM 4.4A Fig 4a&b. Basic Gate Charge Test Circuit and Waveform V tp V(BR)SS V S L RIVER 0 I AS R G 20V tp.u.t I AS 0.0Ω + - V A Starting T J, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum Avalanche Energy and Waveforms vs. rain Current 6

7 SO-8 Package Outline imensions are shown in milimeters (inches) ' % ',0,&+(6 0, 0; 0,//,0(7(56 0, 0; ( + >@ E F ' ( H %6,& %6,& H %6,& %6,& + ; H. / \ ƒ ƒ ƒ ƒ H.[ƒ & \ ;E >@ ;/ ;F >@ & % )22735,7 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,265(6+2:,,//,0(7(56>,&+(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67+(/(*7+2)/(')2562/'(5,*72 68%6757( >@ ;>@ ;>@ ;>@ SO-8 Part Marking Information (;03/(7+,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 ',6*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7+(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 7

8 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 9mH R G = 25Ω, I AS = 4.4A. ƒ When mounted on inch square copper board, t sec (.566 ) 2.40 (.488 ) Pulse width 400µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V S is rising from 0 to 80% V SS. I S 5.8A, di/dt 250A/µs, V V (BR)SS, T J 50 C. ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.04/06 8

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized