IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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1 1 4/11/8 PD A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17 C µs short circuit SOA Square RBSOA G % of the parts tested for 4X rated current (I LM ) Positive V CE (ON) Temperature co-efficient E Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution n-channel Lead Free Package V CES = 6V I C = 12A, T C = C t SC µs, T J(max) = 17 C V CE(on) typ. = 1.V Benefits High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C G CE TO-2AB G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = C Continuous Collector Current 24 I T C = C Continuous Collector Current 12 I CM Pulse Collector Current 48 I LM Clamped Inductive Load Current c 48 A I T C = C Diode Continous Forward Current 24 I T C = C Diode Continous Forward Current 12 I FM Diode Maximum Forward Current e 48 V GE Continuous Gate-to-Emitter Voltage ± V Transient Gate-to-Emitter Voltage ±3 P T C = C Maximum Power Dissipation 14 W P T C = C Maximum Power Dissipation 7 T J Operating Junction and - to +17 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 1.7 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) 3.66 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface). R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 8
2 Electrical T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = µa f CT6 V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA ( C-17 C) CT I C = 12A, V GE = V, T J = C,6,7 V CE(on) Collector-to-Emitter Saturation Voltage 1.9 V I C = 12A, V GE = V, T J = C 9,, I C = 12A, V GE = V, T J = 17 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 3µA 9,, V GE(th) / TJ Threshold Voltage temp. coefficient -18 mv/ C V CE = V GE, I C = 1.mA ( C - 17 C) 11, 12 gfe Forward Transconductance 7.7 S V CE = V, I C = 12A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 6V 47 V GE = V, V CE = 6V, T J = 17 C V FM Diode Forward Voltage Drop V I F = 12A I F = 12A, T J = 17 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 38 I C = 12A 24 Q ge Gate-to-Emitter Charge (turn-on) nc V GE = V CT1 Q gc Gate-to-Collector Charge (turn-on) V CC = 4V E on Turn-On Switching Loss I C = 12A, V CC = 4V, V GE = V CT4 E off Turn-Off Switching Loss µj R G = 22Ω, L = µh, L S = nh, T J = C E total Total Switching Loss Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 31 4 I C = 12A, V CC = 4V, V GE = V CT4 t r Rise time ns R G = 22Ω, L = µh, L S = nh, T J = C t d(off) Turn-Off delay time t f Fall time E on Turn-On Switching Loss 18 I C = 12A, V CC = 4V, V GE =V 13, E off Turn-Off Switching Loss 3 µj R G =22Ω, L=µH, L S =nh, T J = 17 C f CT4 E total Total Switching Loss 4 Energy losses include tail & diode reverse recovery WF1, WF2 t d(on) Turn-On delay time 3 I C = 12A, V CC = 4V, V GE = V 14, 16 t r Rise time 18 ns R G = 22Ω, L = µh, L S = nh CT4 t d(off) Turn-Off delay time 2 T J = 17 C WF1 t f Fall time 41 WF2 C ies Input Capacitance 76 pf V GE = V 23 C oes Output Capacitance 2 V CC = 3V C res Reverse Transfer Capacitance 23 f = 1.Mhz T J = 17 C, I C = 48A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 22Ω, V GE = +V to V SCSOA Short Circuit Safe Operating Area µs V CC = 4V, Vp =6V 22, CT3 Rg = 22Ω, V GE = +V to V Erec Reverse Recovery Energy of the Diode 28 µj T J = 17 C 17, 18, 19 t rr Diode Reverse Recovery Time 68 ns V CC = 4V, I F = 12A, 21 I rr Peak Reverse Recovery Current 19 A V GE = V, Rg = 22Ω, L =µh, L s = nh WF3 WF4 Notes: V CC = 8% (V CES ), V GE = V, L = µh, R G = 22Ω. This is only applied to TO-2AB package. ƒ Pulse width limited by max. junction temperature. Refer to AN-86 for guidelines for measuring V (BR)CES safely. 2
3 I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µsec 1.1 Tc = C Tj = 17 C Single Pulse µsec 1msec DC 1 1 Fig. 3 - Forward SOA T C = C, T J 17 C; V GE =V Fig. 4 - Reverse Bias SOA T J = 17 C; V GE =V V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V 3 3 V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V Fig. - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = C; tp = 8µs 3
4 I CE (A) I CE (A) I F (A) V GE = 18V VGE = V VGE = 12V VGE = V VGE = 8.V c C 17 C Fig. 7 - Typ. IGBT Output Characteristics T J = 17 C; tp = 8µs V F (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs I CE = 6.A I CE = 12A I CE = 24A 12 8 I CE = 6.A I CE = 12A I CE = 24A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = C T J = C T J = 17 C I CE = 6.A I CE = 12A I CE = 24A V GE (V) V GE (V) Fig Typical V CE vs. V GE T J = 17 C Fig Typ. Transfer Characteristics V CE = V; tp = µs 4
5 I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) td OFF E OFF t F 4 3 E ON td ON t R 3 1 I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 17 C; L = µh; V CE = 4V, R G = 22Ω; V GE = V Fig Typ. Switching Time vs. I C T J = 17 C; L = µh; V CE = 4V, R G = 22Ω; V GE = V 4 4 E OFF 3 3 E ON td OFF t F 7 1 Rg (Ω) Fig. - Typ. Energy Loss vs. R G T J = 17 C; L = µh; V CE = 4V, I CE = 12A; V GE = V td ON t R 7 1 R G (Ω) Fig Typ. Switching Time vs. R G T J = 17 C; L = µh; V CE = 4V, I CE = 12A; V GE = V R G = Ω R G = 22Ω R G = 47Ω R G = Ω I F (A) R G (Ω) Fig Typ. Diode I RR vs. I F T J = 17 C Fig Typ. Diode I RR vs. R G T J = 17 C
6 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) Ω 24A 22Ω Ω 6 4 Ω 12A 6.A di F /dt (A/µs) Fig Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = V; I F = 12A; T J = 17 C di F /dt (A/µs) Fig. - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = V; T J = 17 C R G = Ω R G = 22Ω R G = 47Ω R G = Ω Current (A) I F (A) V GE (V) Fig Typ. Diode E RR vs. I F T J = 17 C Fig V GE vs. Short Circuit Time V CC = 4V; T C = C 16 Cies V CES = 3V V CES = 4V 8 Coes 6 4 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 12A; L = 6µH 6
7 1 D =. Thermal Response ( Z thjc ) τ 1 τ 2 τ 3 τ Ci= τi/ri SINGLE PULSE Ci i/ri ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ J τ J R 1 R 2 R 3 R 1 R 2 R 3 τ 1 τ 2 τ C τ Ri ( C/W) τi (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ) 1.1 D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ri ( C/W) τi (sec) SINGLE PULSE Ci= τi/ri Ci i/ri ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ C τ Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7
8 L 1K L VC C 8 V Rg 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / L 4x DC 36V - V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4µH D1 K C sense Rg VCC G force.7µ E sense E force Fig.C.T. - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8
9 4 4 4 tr 3 tf 3 3 VCE (V) 9% I CE VCE (V) 9% test TEST % I CE % test % V CE % V CE E OFF Loss Time(µs) E ON Time (µs) Fig. WF1 - Typ. Turn-off Loss T J = 17 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss T J = 17 C using Fig. CT.4 Q RR 4 t RR 3 V CE IRR(A) - - Peak I RR % Peak I RR VCE (V) I CE ICE (A) time (µs) Fig. WF3 - Typ. Diode Recovery T J = 17 C using Fig. CT time (µs) Fig. WF4 - Typ. S.C. T J = C using Fig. CT
10 TO-2AB Package Outline Dimensions are shown in millimeters (inches) TO-2AB Part Marking Information (;$3/( 7+,6,6$1,) /27&2'( $66(%/('21::,17+($66(%/</,1(&,17(1$7,21$/ (&7,),( /2*2 3$718%( '$7(&2'( 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH $66(%/< /27&2'( <($ :((. /,1(& TO-2AB package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 924, USA Tel: (3) 2-7 TAC Fax: (3) Visit us at for sales contact information. 4/8
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IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
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