IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.
|
|
- Piers Singleton
- 6 years ago
- Views:
Transcription
1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. G IRGR3BKDPbF C E n-channel V CES = V PD - 93 I C =.A, T C = C t sc > µs, T J = C V CE(on) typ. =.9V D-Pak Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage V I T C = C Continuous Collector Current 7.8 A I T C = C Continuous Collector Current. I CM Pulse Collector Current (Ref.Fig.C.T.). I LM Clamped Inductive Load current c. I Tc = C Diode Continous Forward Current. I Tc = C Diode Continuous Forward Current 3. I FM Diode Maximum Forward Current. V GE Gate-to-Emitter Voltage ± V P T C = C Maximum Power Dissipation W P T C = C Maximum Power Dissipation T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature Range, for sec. 3 (.3 in. (.mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT. C/W R θjc Junction-to-Case- Diode 8.8 R θja Junction-to-Ambient, (PCB Mount) d Wt Weight.3 g /3/
2 IRGR3BKDPbF Electrical T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage V V GE = V, I C = µa V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = ma ( C- C) V CE(on) Collector-to-Emitter Voltage.9. I C = 3.A, V GE = V,,7.. V I C = 3.A, V GE = V, T J = C 9,, V GE(th) Gate Threshold Voltage 3... V CE = V GE, I C = µa 9,, V GE(th) / T J Threshold Voltage temp. coefficient -8. mv/ C V CE = V GE, I C = ma ( C- C) gfe Forward Transconductance.9 S V CE = V, I C = 3.A, PW = 8µs I CES Zero Gate Voltage Collector Current. µa V GE = V, V CE = V V GE = V, V CE = V, T J = C V FM Diode Forward Voltage Drop..8 V I F = 3.A, V GE = V 8..8 I F = 3.A, V GE = V, T J = C I GES Gate-to-Emitter Leakage Current ± na V GE = ±V, V CE = V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge (turn-on) 3 I C = 3.A 3 Q ge Gate-to-Emitter Charge (turn-on)..3 nc V CC = V CT Q gc Gate-to-Collector Charge (turn-on). 9.9 V GE = V E on Turn-On Switching Loss 7 I C = 3.A, V CC = V CT E off Turn-Off Switching Loss 39 µj V GE = V, R G = Ω, L =.mh E tot Total Switching Loss T J = C e t d(on) Turn-On delay time 8 I C = 3.A, V CC = V t r Rise time ns V GE = V, R G = Ω, L =.mh CT t d(off) Turn-Off delay time T J = C t f Fall time 8 8 E on Turn-On Switching Loss 9 I C = 3.A, V CC = V CT E off Turn-Off Switching Loss 98 µj V GE = V, R G = Ω, L =.mh 3, E tot Total Switching Loss 9 3 T J = C e WF,WF t d(on) Turn-On delay time 8 I C = 3.A, V CC = V, t r Rise time 7 ns V GE = V, R G = Ω, L =.mh CT t d(off) Turn-Off delay time T J = C WF t f Fall time 9 WF C ies Input Capacitance 9 V GE = V C oes Output Capacitance 3 pf V CC = 3V C res Reverse Transfer Capacitance. f =.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = C, I C =.A, Vp = V V CC =V,V GE =+V to V,R G = Ω SCSOA Short Circuit Safe Operating Area µs T J = C, Vp = V, R G = Ω CT3 V CC =3V,V GE = +V to V Erec Reverse Recovery Energy of the Diode 38 µj T J = C 7,8,9 t rr Diode Reverse Recovery Time 77 8 ns V CC = V, I F = 3.A, L =.mh, I rr Diode Peak Reverse Recovery Current.8.3 A V GE = V, R G = Ω CT,WF3 V CC = 8% (V CES ), V GE = V, L = µh, R G = Ω. ƒ Energy losses include "tail" and diode reverse recovery. When mounted on " square PCB (FR- or G- Material ). For recommended footprint and soldering techniques refer to application note #AN CT WF
3 I C (A) I C A) I C (A) P tot (W) IRGR3BKDPbF T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. - Power Dissipation vs. Case Temperature µs µs. ms ms DC. Fig. 3 - Forward SOA T C = C; T J C Fig. - Reverse Bias SOA T J = C; V GE =V 3
4 I CE (A) I F (A) I CE (A) I CE (A) IRGR3BKDPbF V GE = 8V VGE = V VGE = V VGE = V VGE = 8.V V GE = 8V VGE = V VGE = V VGE = V VGE = 8.V 8 8 Fig. - Typ. IGBT Output Characteristics T J = - C; tp = 8µs Fig. - Typ. IGBT Output Characteristics T J = C; tp = 8µs V GE = 8V VGE = V VGE = V VGE = V VGE = 8.V - C C C V F (V) Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics T J = C; tp = 8µs tp = 8µs
5 I D, Drain-to-Source Current (Α) IRGR3BKDPbF I CE =.A I CE = 3.A I CE =.A 8 I CE =.A I CE = 3.A I CE =.A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = C 8 T J = C 8 I CE =.A I CE = 3.A I CE =.A T J = C V GE (V) V GS, Gate-to-Source Voltage (V) Fig. - Typical V CE vs. V GE T J = C Fig. - Typ. Transfer Characteristics V CE = V; tp = µs
6 Energy (µj) Swiching Time (ns) Swiching Time (ns) IRGR3BKDPbF E ON Energy (µj) E OFF td OFF t F t R td ON 3 7 I C (A) I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = C; L=.mH; V CE = V R G = Ω; V GE = V Fig. - Typ. Switching Time vs. I C T J = C; L=.mH; V CE = V R G = Ω; V GE = V E ON E OFF td OFF t F t R td ON 3 3 R G (Ω) R G (Ω) Fig. - Typ. Energy Loss vs. R G Fig. - Typ. Switching Time vs. R G T J = C; L=.mH; V CE = V T J = C; L=.mH; V CE = V I CE = 3.A; V GE = V I CE = 3.A; V GE = V
7 I RR (A) Q RR (µc) I RR (A) I RR (A) IRGR3BKDPbF R G = Ω R G = Ω 3 3 R G = 33Ω R G = 7Ω I F (A) R G (Ω) Fig. 7 - Typical Diode I RR vs. I F T J = C Fig. 8 - Typical Diode I RR vs. R G T J = C; I F = 3.A Ω 33Ω 7 Ω Ω.A 3.A.A 3 di F /dt (A/µs) 3 3 di F /dt (A/µs) Fig. 9- Typical Diode I RR vs. di F /dt V CC = V; V GE = V; I F = 3.A; T J = C Fig. - Typical Diode Q RR V CC = V; V GE = V;T J = C 7
8 Capacitance (pf) V GE (V) Energy (µj) IRGR3BKDPbF 7 Ω Ω 33Ω 7Ω I F (A) Fig. - Typical Diode E RR vs. I F T J = C Cies 3V V Coes 8 Cres 8 8 Q G, Total Gate Charge (nc) Fig. - Typ. Capacitance vs. V CE Fig. 3 - Typical Gate Charge vs. V GE V GE = V; f = MHz I CE = 3.A; L = µh 8
9 Thermal Response ( Z thjc ) Thermal Response ( Z thjc ) IRGR3BKDPbF. D = SINGLE PULSE ( THERMAL RESPONSE ) R R R R τ J τ J τ τ τ τ Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D = SINGLE PULSE ( THERMAL RESPONSE ) R R R R R 3 R 3 τ J τ J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 9
10 IRGR3BKDPbF L K DUT L VCC 8 V + - Rg DUT 8V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit Driver diode clamp / DUT L DC DUT 3V - V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T. - Resistive Load Circuit
11 IRGR3BKDPbF Vce (V) Time (us) Fig. WF- Typ. Turn-off Loss T J = C using Fig. CT. tf Eoff Loss 9% Ice % Vce % Ice Vce Ice 9 3 Ice (A) Vce (V) 3 tr Vce Ice Eon Loss Time (us) 9% Ice % Ice % Vce Ice (A) Fig. WF- Typ. Turn-on Loss T J = C using Fig. CT. Vce Vf (V) - -3 Q RR trr % Peak IRR 3 If (A) 3 Ice 3 I CE (A) - - Peak IRR Time (us) Fig. WF3- Typ. Diode Recovery T J = C using Fig. CT. Time (us) Fig. WF- Typ. S.C T C = C using Fig. CT.3
12 IRGR3BKDPbF D-Pak (TO-AA) Package Outline Dimensions are shown in millimeters (inches). (.). (.).73 (.).3 (.) - A -.7 (.).88 (.3).38 (.9).9 (.8). (.).89 (.3).8 (.3). (.8). (.). (.). (.). (.) X. (.).7 (.3) 3. (.).97 (.3) - B -.89 (.3) 3X. (.). (.) M A M B. (.) 9. (.37). (.).8 (.). (.) MIN..8 (.3). (.8) LEAD ASSIGNMENTS - GATE - DRAIN 3 - SOURCE - DRAIN.8 (.9).7 (.8) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y.M, 98. CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-AA. DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +. (.). D-Pak (TO-AA) Part Marking Information (Lead-Free) EXAMPLE: THIS IS AN IRFR WITH ASSEMBLY LOT CODE 3 AS S EMBLED ON WW, 999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFR 9A 3 PART NUMBER DATE CODE YEAR 9 = 999 WEEK LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFR P9A 3 PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK A = AS S EMBLY S IT E CODE
13 IRGR3BKDPbF D-Pak (TO-AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL.3 (. ).7 (.9 ).3 (. ).7 (.9 ). (.7 ).9 (.9 ) FEED DIRECTION 8. (.38 ) 7.9 (.3 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER.. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-8 & EIA-. 3 INCH NOTES :. OUTLINE CONFORMS TO EIA-8. mm Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 9, USA Tel: (3) -7 TAC Fax: (3) -793 Visit us at for sales contact information./ 3
14 Note: For the most current drawings please refer to the IR website at:
IRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
More informationIRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark
More informationIRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction
More informationAbsolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More informationIRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
More informationIRGB30B60K IRGS30B60K IRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature
More informationIRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. μs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
More informationParameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More informationIRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17
More informationIRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationIRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
More informationIRGB4062DPbF IRGP4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 75 C 5 µs short circuit SOA Square RBSOA
More informationIRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationIRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationSMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units
SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More information± 20 Transient Gate-to-Emitter Voltage
IRGSDPbF V CES = V INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE I C.A, T C = C C C t sc > µs, T jmax = 7 C V CE(on) typ..7v Applications Appliance Motor Drive Inverters SMPS Features
More informationIRG7PH35UDPbF IRG7PH35UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature
More informationn-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
More informationIRG7PH42UDPbF IRG7PH42UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature
More informationn-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF
IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square
More information20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.
5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED
More informationIRGP4063DPbF. n-channel
1 www.irf.com 5/11/6 现货库存 技术资料 百科信息 热点资讯, 精彩尽在鼎好! INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction
More informationECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units
Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse
More informationIRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
More information=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)
PD- 94117 IRGP2B12U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT UltraFast Non Punch Through (NPT) Technology 1 µs Short Circuit capability Square RBSOA Positive V CE (on) Temperature Coefficient
More informationECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units
IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
More informationIRGP30B120KD-E. Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93818A IRGP3B12KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features Low V CE (on) Non Punch Through (NPT) Technology Low Diode V F (1.76V Typical
More informationAUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA % of the parts tested for
More informationIRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features
PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More informationIRGP20B120UD-E. UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
PD- 93817 IRGP2B12UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast Non Punch Through (NPT) Technology Low Diode V F (1.67V Typical @ 2A
More informationAUTOMOTIVE GRADE. Standard Pack
AUTOMOTIVE GRADE AUIRGPS47D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6µs SCSOA Square RBSOA 1% of the parts
More informationCID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
More informationIR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF
IR IGBT IRGB463DPbF IRGIB463DPbF IRGP463D(-E)PbF IRGS463DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V CES = 6V I C = 3A, T C =1 C C C C t SC 5µs, T J(max) = 175 C V CE(ON)
More information225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More information50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
More informationAUIRGB4062D AUIRGP4062D AUIRGP4062D-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More informationIR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF
IR IGBT IRGB462DPbF IRGIB462DPbF IRGP462D(-E)PbF IRGS462DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V CES = 6V I C = 2A, T C =1 C C C C t SC 5µs, T J(max) = 175 C V CE(ON)
More informationAUIRGS30B60K AUIRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR Features Low V CE(on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient Maximum Junction Temperature
More information225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
More informationAUIRGP4062D AUIRGP4062D-E
PD - 96353A AUIRGP462D AUIRGP462D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V CES = 6V Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square
More informationIGBT PIM Module, 15 A
IGBT PIM Module, 1 A GB1RF1K ECONO PIM PRODUCT SUMMARY V CES 1 V V CE(on) (typical). V t sc at T J = 1 C > 1 µs I C at T C = C 1 A FEATURES Low V CE(on) non punch through IGBT technology Low diode V F
More informationAbsolute Maximum Ratings
IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
More informationBase part number Package Type Standard Pack Complete Part Number
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 1% of The Parts Tested for I LM Positive V
More informationAbsolute Maximum Ratings
IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
More informationDiode Maximum Forward Current d 480 V GE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 P D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6μs SCSOA Square RBSOA 1% of the parts tested for I LM Positive V
More informationHalf Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A
VS-4MT2UHAPbF Half Bridge IGBT MTP (Ultrafast NPT IGBT), 8 A MTP PRIMARY CHARACTERISTICS V CES 2 V V CE(on) typical at V GE = 5 V 3.36 V I C at T C = 25 C 8 A Speed 8 khz to 3 khz Package MTP Circuit configuration
More informationParameter Min. Typ. Max. Units Conditions. Parameter Min. Typ. Max. Units
AUTOMOTIVE GRADE AUIRGP466D1 AUIRGP466D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses G Maximum Junction temperature
More informationIRGB4055PbF IRGS4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
More informationIRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
More informationA I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor
Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD -95441 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
More information8ETU04 8ETU04S 8ETU04-1
8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/
More information30ETH06 30ETH06S 30ETH06-1
Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor
PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized
More informationIRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.
PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
More informationIRGPC40UD2 UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE PD - 9.88A UltraFast opack IGBT Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
More informationUltrafast, Soft Recovery Diode. Base Cathode Anode N/C
HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in
More information15ETL06PbF 15ETL06FPPbF
Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
More information60EPU02PbF 60APU02PbF
Bulletin PD-079 08/05 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
More informationHFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A
PD - 9469A HEXFRED TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount Ultrafast, Soft Recovery Diode V R = 200V I F(AV) = 20A t rr
More information) unless otherwise specified Symbol Description Values Units
IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
More informationHFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA
PD - 94223B HFB6HY20CC FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets V R = 200V I F(AV) =
More informationSMPS MOSFET. V DSS R DS(on) max (mω)
P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche
More information150EBU04. Ultrafast Soft Recovery Diode. t rr = 60ns I F(AV) = 150Amp V R = 400V. Bulletin PD rev. B 02/06
Ultrafast Soft Recovery Diode 50EBU04 Features Ultrafast Recovery 75 C Operating unction Temperature Screw Mounting Only Lead-Free Plating Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
More informationMURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline
MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More informationIXYL40N250CV1 V CES. High Voltage XPT TM IGBT w/ Diode = 2500V I C110. = 40A V CE(sat) 4.0V = 134ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
More informationSTGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.
Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged
More informationIXYX25N250CV1 IXYX25N250CV1HV
High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.
AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA
AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationIXXH80N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 80A V CE(sat) 2.1V = 52ns. t fi(typ)
XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
More informationKDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V
KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:
More informationGT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking
GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf
More informationIXXH60N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 60A V CE(sat) 2.2V = 43ns. t fi(typ)
XPT TM 65V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXH6N65BH V CES = 65V = 6A V CE(sat) 2.2V = 3ns t fi(typ) TO-27 Symbol Test Conditions Maximum Ratings V CES
More informationMMIX4B22N300 V CES. = 3000V = 22A V CE(sat) 2.7V I C90
Advance Technical Information High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) C G EC3 Symbol Test Conditions Maximum Ratings G3 C2 G2 E2C V CES = 25 C
More informationTO-220AC. 1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
More informationIXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
More informationIXBX50N360HV. = 3600V = 50A V CE(sat) 2.9V. BiMOSFET TM Monolithic Bipolar MOS Transistor High Voltage, High Frequency. Advance Technical Information
BiMOSFET TM Monolithic Bipolar MOS Transistor High Voltage, High Frequency Advance Technical Information S = 3V = A (sat) 2.9V Symbol Test Conditions Maximum Ratings S = 25 C to C 3 V V CGR = 25 C to C,
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More informationAUIRFS4115 AUIRFSL4115
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More informationIXYH10N170CV1 V CES = 1700V I C110. High Voltage XPT TM IGBT w/ Diode. = 10A V CE(sat) 3.8V = 70ns. t fi(typ) Advance Technical Information TO-247 AD
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE =
More informationIXYH16N250CV1HV. High Voltage XPT TM IGBT w/ Diode V CES I C110. = 2500V = 16A V CE(sat) 4.0V = 250ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE
More informationIXXR110N65B4H1. XPT TM 650V GenX4 TM w/ Sonic Diode V CES I C110. = 650V = 70A V CE(sat) 2.10V = 43ns. t fi(typ) (Electrically Isolated Tab)
XPT TM V GenX TM w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for -khz Switching IXXRNBH S = V = 7A (sat).v = ns t fi(typ) ISOPLUS7 TM Symbol Test Conditions Maximum Ratings
More informationMUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline
Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8
l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs
More information30V GS = 10V 6.2nC
pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
More informationIXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1
High Voltage IGBT w/ Sonic Diode IXGTN7A IXGHN7A IXGTN7AH IXGHN7AH S = 7V 9 = A (sat).v t fi(typ) = ns H Symbol Test Conditions Maximum Ratings S = C to C 7 V V CGR = C to C, R GE = M 7 V TO- (IXGT) V
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationIRLML6346TRPbF HEXFET Power MOSFET
P - 9784A EXFET Power MOSFET V S 3 V V GS Max ± 2 V * R Son) max @V GS = 4.V) 63 m R Son) max @V GS = 2.V) 8 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor V CES = V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C,
More informationPD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1
l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More information