P-CHANNEL MOSFET. Top View

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Lizbeth Blake
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1 Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET ery Small SOC Package Low Profile (<.mm) vailable in Tape & Reel Fast Switching escription Fifth Generation HEXFETs from nternational Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S G S2 G2 N-CHNNEL MOSFET P-CHNNEL MOSFET Top iew 7 6 P J RF7509 HEXFET Power MOSFET 2 2 N-Ch P-Ch SS R S(on) 0.Ω 0.20Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMC cards. Micro8 bsolute Maximum Ratings Parameter Max. Units N-Channel P-Channel S rain-source oltage T = 25 C Continuous rain Current, GS T = 70 C Continuous rain Current, GS M Pulsed rain Current 2-6 = 25 C Maximum Power issipation.25 W = 70 C Maximum Power issipation 0.8 W Linear erating Factor 0 mw/ C GS Gate-to-Source oltage ± 20 GSM Gate-to-Source oltage Single Pulse tp<0µs 30 dv/dt Peak iode Recovery dv/dt 5.0 /ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Soldering Temperature, for 0 seconds 240 (.6mm from case) Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbient 00 C/W 2//98

2 RF7509 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions N-Ch 30 GS = 0, = 250µ (BR)SS rain-to-source Breakdown oltage P-Ch -30 GS = 0, = -250µ N-Ch Reference to 25 C, = m (BR)SS / T J Breakdown oltage Temp. Coefficient / C P-Ch Reference to 25 C, = -m R S(ON) Static rain-to-source On-Resistance GS = 0, =.7 N-Ch GS = 4.5, = 0.85 Ω GS = -0, =-.2 P-Ch GS = -4.5, =-0.6 N-Ch.0 S = GS, = 250µ GS(th) Gate Threshold oltage P-Ch -.0 S = GS, = -250µ g N-Ch.9 S = 0, = 0.85 fs Forward Transconductance S P-Ch 0.92 S = -0, = -0.6 N-Ch.0 S = 24, GS = 0 P-Ch -.0 S = -24, GS = 0 SS rain-to-source Leakage Current µ N-Ch 25 S = 24, GS = 0, P-Ch -25 S = -24, GS = 0, GSS Gate-to-Source Forward Leakage N-P ±00 GS = ± 20 Q N-Ch g Total Gate Charge N-Channel P-Ch 7.5 N-Ch.2.8 =.7, S = 24, GS = 0 Q gs Gate-to-Source Charge nc P-Ch.3.9 P-Channel Q N-Ch gd Gate-to-rain ("Miller") Charge P-Ch = -.2, S = -24, GS = -0 t N-Ch 4.7 d(on) Turn-On elay Time P-Ch 9.7 N-Channel t N-Ch 0 = 5, =.7, R G = 6.Ω, r Rise Time R P-Ch 2 = 8.7Ω ns t N-Ch 2 d(off) Turn-Off elay Time P-Channel P-Ch 9 t N-Ch 5.3 = -5, = -.2, R G = 6.2Ω, f Fall Time R P-Ch 9.3 = 2Ω C N-Ch 20 iss nput Capacitance N-Channel P-Ch 80 GS = 0, S = 25, ƒ =.0MHz C oss C rss Output Capacitance Reverse Transfer Capacitance N-Ch 80 pf P-Ch 87 N-Ch 32 P-Ch 42 P-Channel GS = 0, S = -25, ƒ =.0MHz ƒ Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions S Continuous Source Current (Body iode) N-Ch.25 P-Ch -.25 SM Pulsed Source Current (Body iode) N-Ch 2 P-Ch -6 S iode Forward oltage N-Ch.2, S =.7, GS = 0 ƒ P-Ch -.2, S = -.8, GS = 0 ƒ t rr Reverse Recovery Time N-Ch ns N-Channel P-Ch 30 45, F =.7, di/dt = 00/µs Q rr Reverse Recovery Charge N-Ch nc P-Channel ƒ P-Ch 37 55, F = -.2, di/dt = -00/µs Notes: Repetitive rating; pulse width limited by ƒ Pulse width 300µs; duty cycle 2%. max. junction temperature. ( See fig. 2 ) N-Channel S.7, di/dt 20/µs, (BR)SS, T J 50 C P-Channel S -.2, di/dt 60/µs, (BR)SS, T J 50 C Surface mounted on FR-4 board, t 0sec. 2

3 N - Channel RF7509, rain-to-source Current () 00 0 GS TOP BOTTOM , rain-to-source Current () 00 0 GS TOP BOTTOM µs PULSE WTH S, rain-to-source oltage () Fig. Typical Output Characteristics 20µs PULSE WTH T J = 50 C S, rain-to-source oltage () Fig 2. Typical Output Characteristics 00 00, rain-to-source Current () 0 T J = 50 C S= 0 20µs PULSE W TH GS, Gate-to-Source oltage () Fig 3. Typical Transfer Characteristics S, Reverse rain Current () 0 T J = 50 C GS = S, Source-to-rain oltage () Fig 4. Typical Source-rain iode Forward oltage R S(on), rain-to-source On Resistance (Normalized) =.7 GS = T J, Junction Temperature ( C) R S (on), rain-to-source On Resistance GS = 4.5 GS = , rain Current () Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance s. rain s. Temperature Current 3

4 RF7509 R S (on), rain-to-source On Resistance = GS, Gate-to-Source oltage () Fig 7. Typical On-Resistance s. Gate oltage N - Channel, rain Current () 00 0 OPERTON N THS RE LMTE BY R S(on) 0us 00us ms 0ms TC = 25 C TJ = 50 C Single Pulse S, rain-to-source oltage () Fig 8. Maximum Safe Operating rea C, Capacitance (pf) GS = 0, f = M Hz C iss = C gs + C gd, C ds S HORTE C rss = C gd C oss = C ds + C gd C iss C oss C rss, Gate-to-Source oltage () GS =.7 S = 24 S = S, rain-to-source oltage () 0 FOR TEST CRCUT SEE FGURE Q, Total Gate Charge (nc) G Fig 9. Typical Capacitance s. rain-to-source oltage Fig 0. Typical Gate Charge s. Gate-to-Source oltage 4

5 -, rain-to-source Current () 0 GS TOP BOTTOM µs PULSE WTH S, rain-to-source oltage () Fig. Typical Output Characteristics P - Channel -, rain-to-source Current () 0 GS TOP BOTTOM RF µs PULSE WTH T J = 50 C S, rain-to-source oltage () Fig 2. Typical Output Characteristics 0 0 -, rain-to-source C urrent () T = 50 C J S = -0 20µs PULSE WTH GS, Gate-to-Source oltage () Fig 3. Typical Transfer Characteristics - S, Reverse rain Current () T J = 50 C GS = S, Source-to-rain oltage () Fig 4. Typical Source-rain iode Forward oltage R S(on), rain-to-source On Resistance (Normalized) = -.2 GS = T J, Junction Temperature ( C) Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance s. rain s. Temperature Current 5 R S(on), rain-to-source On Resistance ( Ω ) GS = -4.5 GS = , rain Current ()

6 RF7509 R S(on), rain-to-source On Resistance ( Ω ) = GS, Gate-to-Source oltage () Fig 7. Typical On-Resistance s. Gate oltage C, Capacitance (pf) C iss C oss C rss GS = 0, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + C gd S, rain-to-source oltage () Fig 9. Typical Capacitance s. rain-to-source oltage 000 P - Channel N-P - Channel -, rain Current () Fig 8. Maximum Safe Operating rea - GS, Gate-to-Source oltage () ms TC = 25 C TJ = 50 C Single Pulse S, rain-to-source oltage () OPERTON N THS RE LMTE BY R S(on) = -.2 S = -24 S = -5 0us 00us ms FOR TEST CRCUT SEE FGURE Q G, Total Gate Charge (nc) Fig 20. Typical Gate Charge s. Gate-to-Source oltage Thermal Response (Z thj ) 00 = PM t SNGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) Fig 2. Maximum Effective Transient Thermal mpedance, Junction-to-mbient 6

7 RF7509 Package Outline Micro8 Outline imensions are shown in millimeters (inches) - B E H (.00) M M e 6X e - C (.004) B 8X 0.08 (.003) M C S B S θ LE SSGNMENTS SNGLE L 8X UL S S S G S G S2 G2 C 8X NCHES MLLMETERS M MN MX MN MX B C e.0256 BSC 0.65 BSC e.028 BSC 0.33 BSC E H L θ (.04 ) 8X RECOMMENE FOOTPRNT 3.20 (.26 ) 0.38 (.05 ) 8X (.67 ) (.208 ) NOTES: MENSONNG N TOLERNCNG PER NS Y4.5M C O N TR O LLN G M E N SO N : N C H. 3 MENSONS O NOT NCLUE MOL FLSH (.0256 ) 6X Part Marking nformation Micro8 EXMPLE : THS S N RF750 TE COE (YWW) Y = LST GT OF YER WW = WEEK PRT NUMBER TOP 7

8 RF7509 Tape & Reel nformation Micro8 imensions are shown in millimeters (inches) TERMNL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE RECTON NOTES:. OUTLNE CONFORMS TO E-48 & E CONTROLLNG MENSON : MLLMETER (2.992) MX. NOTES :. CONTROLLNG MENSON : MLLMETER. 2. OUTLNE CONFORMS TO E-48 & E (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) R GRET BRTN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: R CN: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) R GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: R TLY: ia Liguria 49, 007 Borgaro, Torino Tel: R FR EST: K&H Bldg., 2F, 30-4 Nishi-kebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: R SOUTHEST S: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: R TWN:6 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: ata and specifications subject to change without notice. 2/98 8

P-CHANNEL MOSFET. Top View

P-CHANNEL MOSFET. Top View Generation Technoogy Utra Low On-Resistance ua N and P Channe MOSFET ery Sma SOIC Package Low Profie (