IRGP30B120KD-E. Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features V CES = 1200V
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1 PD A IRGP3B12KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features Low V CE (on) Non Punch Through (NPT) Technology Low Diode V F (1.76V A & C) 1 μs Short Circuit Capability Square RBSOA Ultrasoft Diode Recovery Characteristics Positive V CE (on) Temperature Coefficient Extended Lead TO-247AD Package G C E N-channel V CES = 12V V CE(on) typ. = 2.28V V GE = V, I C = A, C Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 12 V I T C = C Continuous Collector Current (Fig.1) 6 I T C = 1 C Continuous Collector Current (Fig.1) 3 I CM Pulsed Collector Current (Fig.3, Fig. CT.) 12 I LM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 12 A I T C = 1 C Diode Continuous Forward Current 3 I FM Diode Maximum Forward Current 12 V GE Gate-to-Emitter Voltage ± 2 V P T C = C Maximum Power Dissipation (Fig.2) 3 P T C = 1 C Maximum Power Dissipation (Fig.2) 12 W T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature, for 1 seconds 3, (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 screw. 1 lbf in (1.1N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.42 R θjc Junction-to-Case - Diode.83 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 W t Weight 6 (.21) g (oz) Z θjc Transient Thermal Impedance Junction-to-Case (Fig.24) 1 9/17/7
2 IRGP3B12KD-E Electrical TJ = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V,I c = μa ΔV (BR)CES / ΔTj Temperature Coeff. of Breakdown Voltage +1.2 V/ C V GE = V, I c = 1 ma ( -1 o C ) I C = A, V GE = V, 6 Collector-to-Emitter Saturation I C = 3A, V GE = V 7, 9 V CE(on) Voltage V I C = 6A, V GE = V I C = A, V GE = V, T J = 1 C I C = 3A, V GE = V, T J = 1 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = μa 9,1,11,12 ΔV GE(th) / ΔTj Temperature Coeff. of Threshold Voltage mv/ o C V CE = V GE, I C = 1 ma ( -1 o C ) g fe Forward Transconductance S V CE = V, I C = A, PW=8μs V GE = V,V CE = 12V I CES Zero Gate Voltage Collector Current 3 67 μa V GE = v, V CE = 12V, T J =1 C 2 V GE = v, V CE = 12V, T J = C I C = A V FM Diode Forward Voltage Drop V I C = 3A I C = A, T J = 1 C I C = 3A, T J = 1 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Fig. Q g Total Gate charge (turn-on) I C = A 23 Q ge Gate - Emitter Charge (turn-on) nc V CC =6V CT 1 Q gc Gate - Collector Charge (turn-on) V GE = V E on Turn-On Switching Loss I C = A, V CC = 6V CT 4 E off Turn-Off Switching Loss μj V GE = V, Rg = Ω, L=2μH WF1 E tot Total Switching Loss 9 T J = o C, Energy losses include tail and diode reverse recovery WF2 E on Turn-on Switching Loss Ic =A, V CC =6V 13, E off Turn-off Switching Loss μj V GE = V, Rg = Ω, L=2μH CT 4 E tot Total Switching Loss T J = 1 o C, Energy losses include tail and diode reverse recovery td(on) Turn - on delay time 6 Ic =A, V CC =6V 14, 16 tr Rise time ns V GE = V, Rg = Ω, L=2μH CT 4 td(off) Turn - off delay time T J = 1 o C, WF1 tf Fall time 6 7 WF2 C ies Input Capacitance 22 V GE = V C oes Output Capacitance 21 pf V CC = 3V 22 C res Reverse Transfer Capacitance 8 f = 1. MHz T J = o C, Ic = 12A 4 RBSOA Reverse bias safe operating area FULL SQUARE V CC = 1V, V P = 12V CT 2 Rg = Ω, V GE = +V to V T J = o C CT 3 SCSOA Short Circuit Safe Operating Area μs V CC = 9V,V P = 12V WF4 Rg = Ω, V GE = +V to V E rec Reverse recovery energy of the diode μj T J = 1 o C 17,18,19 trr Diode Reverse recovery time 3 ns V CC = 6V, Ic = A 2, 21 Irr Peak Reverse Recovery Current A V GE = V, Rg = Ω, L=2μH CT 4, WF3 Le Internal Emitter Inductance 13 nh Measured mm from the package. 2 WF1 & 2
3 IRGP3B12KD-E Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature P t o t ( W ) T C ( C) T C ( C) 1 Fig.3 - Forward SOA T C = C; Tj < C 1 Fig.4 - Reverse Bias SOA Tj = C, V GE = V PULSED 1 2μs 1μs 1μs 1 1 1ms 1 1 1ms DC V CE (V) V CE (V) 3
4 IRGP3B12KD-E Fig. - Typical IGBT Output Characteristics Tj= -4 C; tp=3μs V GE = 18V V GE = V V GE = 12V V GE = 1V V GE = 8V Fig.6 - Typical IGBT Output Characteristics Tj= C; tp=3μs V GE = 18V V GE = V V GE = 12V V GE = 1V V GE = 8V V CE (V) V CE (V) 6 Fig.7 - Typical IGBT Output Characteristics Tj=1 C; tp=3μs 6 Fig.8 - Typical Diode Forward Characteristic tp=3μs 4 4 V GE = 18V V GE = V V GE = 12V V GE = 1V V GE = 8V C C 1 C 3 I F ( A ) V CE (V) V F (V) 4
5 IRGP3B12KD-E 2 Fig.9 - Typical V CE vs V GE Tj= -4 C 2 Fig.1 - Typical V CE vs V GE Tj= C V C E ( V ) I CE =1A I CE =A I CE =A V C E ( V ) I CE =1A I CE =A I CE =A V GE (V) V GE (V) V C E ( V ) Fig.11 - Typical V CE vs V GE Tj= 1 C I CE =1A I CE =A I CE =A Fig.12 - Typ. Transfer Characteristics V CE =2V; tp=2μs Tj= C Tj=1 C V GE (V) Tj=1 C Tj= C V GE (V)
6 IRGP3B12KD-E 8 Fig.13 - Typical Energy Loss vs Ic Tj=1 C; L=2μH; V CE =6V; Rg=22 Ω ; V GE =V 1 Fig.14 - Typical Switching Time vs Ic Tj=1 C; L=2μH; V CE =6V; Rg=22 Ω ;V GE =V 7 6 Eon Eoff tdoff E n e r g y ( μ J ) 4 3 t ( n S ) 1 tdon tf tr I C (A) I C (A) Fig. - Typical Energy Loss vs Rg Tj=1 C; L=2μH; V CE =6V; I CE =A; V GE =V 1 Fig.16 - Typical Switching Time vs Rg Tj=1 C; L=2μH; V CE =6V; I CE =A; V GE =V 33 Eon tdoff E n e r g y ( u J ) Eoff t ( n S ) 1 tdon tr tf Rg (ohms) Rg (ohms) 6
7 IRGP3B12KD-E 4 Fig.17 - Typical Diode I RR vs I F Tj=1 C 4 Fig.18 - Typical Diode I RR vs Rg Tj=1 C; I F =A Rg= Ω 3 I R R ( A ) 2 Rg=1 Ω I R R ( A ) 2 Rg=22 Ω 1 Rg=1 Ω I F (A) Rg (ohms) 4 Fig.19 - Typical Diode I RR vs di F /dt V CC =6V; V GE =V I F =A; Tj=1 C 7 Fig.2 - Typical Diode Q RR V CC =6V; V GE =V; Tj=1 C Ω 1 Ω Ω A Rg= Ω 6 1 Ω 4A 3 3A I R R ( A ) 2 Rg=1 Ω Q R R ( n C ) 4 A 2A Rg=22 Ω 4 1 Rg=1 Ω 3 1 di F / dt (A/μs) 1 di F / dt (A/μs) 7
8 IRGP3B12KD-E Fig.21 - Typ. Diode E rec vs. I F Tj=1 C 24 E n e r g y ( u J ) Ω 1 Ω 22 Ω 1 Ω I F (A) 1 Fig.22 - Typical Capacitance vs V CE V GE =V; f=1mhz Fig.23 - Typ. Gate Charge vs. V GE I C =A; L=6μH 6V C a p a c I t a n c e ( p F ) 1 1 C ies C oes C res V G E ( V ) V V CE (V) Q G, Total Gate Charge (nc)
9 IRGP3B12KD-E Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 1 θ 1 D = SINGLE PULSE P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + T C t 1, Rectangular Pulse Duration (sec) 9
10 IRGP3B12KD-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L 1K DUT L VCC 8 V Rg DUT 1V Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit Driver diode clamp / DUT L D C 9V - V DUT Rg DUT / DRIVER VCC Fig. CT. - Resistive Load Circuit R = VCC ICM Rg DUT VCC 1
11 Fig. WF.1 - Typ. Turn-off Loss Tj=1 C using Fig. CT IRGP3B12KD-E Fig. WF.2 - Typ. Turn-on Loss Tj=1 C using Fig. CT % I CE TEST CURRENT 3 V C E ( V ) 4 3 t f 2 I C E ( A ) V C E ( V ) 4 3 9% test current t r 2 I C E ( A ) 2 % V CE 1 2 1% test current 1 1 % I CE 1 % V CE Eoff Loss t I me (μs) Eon Loss t I me (μs) Fig. WF.3 - Typ. Diode Recovery Tj=1 C using Fig. CT.4 3 Fig. WF.4 - Typ. S.C. T C = C using Fig. CT Q RR 2 1 V CE 2-4 t RR 1 8 V C E ( V ) Peak I RR 1% Peak I RR I C E ( A ) -1-2 VCE (V) I CE 1 ICE (A) t I me (μs) time (μs) 11
12 IRGP3B12KD-E TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) 9. For the most current drawing please refer to IR website at TO-247AC package is not recommended for Surface Mount Application. TO-247AD Part Marking Information EXAMPLE: THIS IS AN IRGP3B12KD-E WITH ASSEMBLY LOT CODE 67 ASSEMBLED ON WW, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO H 6 7 DATE CODE ASSEMBLY YEAR = 2 LOT CODE WEEK LINE H WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 924, Tel: (31) 2-7 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (9) IR GERMANY: Saalburgstrasse 7, 61 Bad Homburg Tel: IR ITALY: Via Liguria 49, 171 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: IR TAIWAN:16 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 1673, Taiwan Tel: Data and specifications subject to change without notice. 9/7 12
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