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1 N-CHANNEL 3A D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600 <1.5 3 A HIGH INPUT IMPEDANCE (OLTAGE DRIEN) ERY LOW ON-OLTAGE DROP ( cesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING D 2 PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix S identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP STATIC RELAYS MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS ( )Pulse width limited by safe operating area. 1 3 D 2 PAK TO-263 (suffix T4 ) INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CES Collector-Emitter oltage ( GS = 0) 600 GE Gate-Emitter oltage ± 20 I C Collector Current (continuos) at T c =25 C 6 A I C Collector Current (continuos)at T c =100 C 3 A I CM ( ) Collector Current (pulsed) 25 A P tot Total Dissipation at T c = 25 C 70 W Derating Factor 0.46 W/ C T stg Storage Temperature 60 to 175 C T j Max. Operating Junction Temperature 175 C November /8
2 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.14 C/W R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W R thc-sink Thermal Resistance Case-sink Typ 0.5 C/W ELECTRICAL CHARACTERISTICS (T case = 25 C unless otherwise specified) OFF BR(CES) Collector-Emitter Breakdown oltage I D = 250 µa GE = I CES Collector cut-off ( GE = 0) CE = Max Rating T j = 25 C CE = Max Rating T j = 125 C ON (*) I GSS DYNAMIC Gate-body Leakage Current ( DS = 0) GS = ± 20 CE = 0 ±100 na GE(th) Gate Threshold oltage CE = GE I C = 250 µa CE(SAT) Collector-Emitter Saturation oltage GE = 15 I C = 1.5 A GE = 15 I C = 3 A GE = 15 I D = 3 A T j = 125 C g fs Forward Transconductance CE = 25 I C = 3 A S C ies Input Capacitance CE = 25 f = 1 MHz GE = pf C oes Output Capacitance pf C res Reverse Transfer Capacitances µa µa pf Q G Total Gate Charge CE =480 I C =3 A GE =15 18 nc Q GE Gate-Emitter Charge 5.4 nc Q GC Gate-Collector Charge 5.5 nc I CL Latching Current clamp = 480 R G = 1 KΩ T j =150 C 12 A SWITCHING ON t d(on) t r DelayTime Rise Time CC = 480 GE = 15 I C = 3 A R G = 1 kω ns ns (di/dt) on E on Turn-on Current Slope Turn-on Switching Losses CC = 480 GE = 15 T j =125 C I C = 3 A R G = 1 kω A/ µj 2/8
3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF t c t r ( off ) t d ( off ) t f E off ( ** ) t c t r ( off ) t d ( off ) t f E off ( ** ) Cross-Over Time Off oltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-Over Time Off oltage Rise Time Delay Time Fall Time Turn-off Switching Loss COLLECTOR-EMITTER DIODE ( )Pulse width limited by max. junction temperature (*)Pulsed: Pulse duration = 300, duty cycle 1.5 %. ( )Losses Include Also The Tail (Jedec Standardization) CC = 480 I C = 3 A R GE = 1 kω GE = 15 CC = 480 I C = 3 A R GE = 1 kω GE = 15 T j = 125 C I f I fm f t rr Q rr I rrm Thermal Impedance Forward Current Forward Current pulsed Forward On-oltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I f = 3 A I f = 1 A I f = 3 A R = 200 di/dt = 100 A/ T j = 125 C mj mj A A 1.9 ns nc A 3/8
4 Output Characteristics Transfer Characteristics Transconductance Collector-Emiter on oltage vs Collector Current Collector-Emitter on oltage vs Temperature Gate Threshold vs Temperature 4/8
5 Normalized Breakdown oltage vs Temperature Capacitance ariations Gate charge Gate-Emitter oltage Off Switching Losses vs Tj Off Switching Losses vs Ic Swittching Off Safe Operating Area 5/8
6 Diode Forward vs Tj Diode Forward oltage Fig. 1: Gate Charge test Circuit Fig. 2 Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8
7 D 2 PAK MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B C C D D E E G L L L M R º 8º 7/8
8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8
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STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes
STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction
50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
Insulated Gate Bipolar Transistor (IGBT)
BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V
CID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
HCF4089B BINARY RATE MULTIPLIER
BINARY RATE MULTIPLIER CASCADABLE IN MULTIPLES OF 4-BITS SET TO "15" INPUT AND "15" DETECT OUTPUT QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V AND 15V PARAMETRIC
IRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
HCC/HCF4093B QUAD 2-INPUT NAND SCHMIDT TRIGGERS
QUAD 2-INPUT NAND SCHMIDT TRIGGERS SCHMITT-TRIGGER ACTION ON EACH INPUT WITH NO EXTERNAL COMPONENTS HYSTERESIS OLTAGE TYPICALLY 0.9 AT DD = 5 AND 2.3 AT DD = 10 NOISE IMMUNITY GREATER THAN 50% OF DD (typ.)
DO-15 DO-201AD STTH3R04Q STTH3R04
STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping
STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes
STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high
STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60
SPS3L6/Q/U POWER SCHOKY RECIFIER MAIN PRODUC CHARACERISICS I F(AV) V RRM 3A 6 V j (max) 5 C V F (max).6 V FEAURES AND BENEFIS NEGLIGIBLE SWICHING LOSSES LOW HERMAL RESISANCE AVALANCHE CAPABILIY SPECIFIED
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.
AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
I C P tot 138 W
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation C Short circuit withstand time 10 µs Designed for operation above 30 khz G E NPT-Technology for 600V applications offers:
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA
AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)
DETAIL "A" #110 TAB (8 PLACES) X (4 PLACES) Y (3 PLACES) TH1 TH2 F O 1 F O 2 DETAIL "A"
MG6Q2YS6A Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-1 (72) 925-7272 Compact IGBT Series Module 6 Amperes/ olts A D H J K DETAIL "A" C2E1 E2 C1 B E F W M F Outline Drawing and Circuit
IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology
L78L00 SERIES POSITIVE VOLTAGE REGULATORS
L78L00 SERIES POSITIE OLTAGE REGULATORS OUTPUT CURRENT UP TO 100 OUTPUT OLTAGESOF 3.3; 5; ; 8; 9; 12; 15; 18; 24 THERMAL OERLOAD PROTECTION SHORT CIRCUIT PROTECTION NO EXTERNAL COMPONENTS ARE REQUIRED
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.
Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology
APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET
1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state
IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology 30% lower E off compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 khz G C E NPT-Technology for 600V applications offers:
ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology
MC MC35172 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS.. GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2.1MHz, 2V/µs
MC3372 MC3572 LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2MHz, 2/µs SINGLE (OR DUAL) SUPPLY OPERATION FROM +4 TO +44 (±2 TO ±22) WIDE INPUT COMMON MODE
Absolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark
A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.
Datasheet ACPACK 1 sixpack topology, 65 V, 5 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 1 ACPACK 1 power module DBC Cu Al 2 O 3 Cu Sixpack topology 65 V, 5 A IGBTs and diodes
ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology
IRGP4263PbF IRGP4263-EPbF
IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction
IRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
HCC/HCF4042B QUAD CLOCKED D LATCH
QUAD CLOCKED D LATCH CLOCK POLARITY CONTROL Q AND Q OUTPUTS COMMON CLOCK LOW POWER TTL COMPATIBLE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED TO 20 FOR HCC DEICE 5, 10,
SKP10N60 SKB10N60, SKW10N60
Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed