A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.

Size: px
Start display at page:

Download "A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features."

Transcription

1 Datasheet ACPACK 1 sixpack topology, 65 V, 5 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 1 ACPACK 1 power module DBC Cu Al 2 O 3 Cu Sixpack topology 65 V, 5 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACPACK 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 2 khz. Product status A1P5S65M2 Product summary Order code Marking A1P5S65M2 A1P5S65M2 Package ACPACK 1 Leads type Solder contact pins DS Rev 2 - February 218 For further information contact your local STMicroelectronics sales office.

2 lectrical ratings 1 lectrical ratings 1.1 IGBT Limiting values at T j = 25 C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Parameter Value Unit V CS Collector-emitter voltage (V G = ) 65 V I C Continuous collector current (T c = 1 C) 5 A I (1) CP Pulsed collector current (t p = 1 ms) 1 A V G Gate-emitter voltage ±2 V P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) 28 W T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 2. lectrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CS Collector-emitter breakdown voltage I C = 1 ma, V G = V 65 V V C(sat) (terminal) Collector-emitter saturation voltage V G = 15 V, I C = 5 A V G = 15 V, I C = 5 A, T J = 15 C 2.3 V V G(th) Gate threshold voltage V C = V G, I C = 1 ma V I CS Collector cut-off current V G = V, V C = 65 V 1 µa I GS Gate-emitter leakage current V C = V, V G = ± 2 V ± 5 na C ies Input capacitance C V C = 25 V, f = 1 MHz, oes Output capacitance 17 pf C res Reverse transfer capacitance V G = V 415 pf 8 pf Q g Total gate charge V CC = 52 V, I C = 5 A, V G = ±15 V 15 nc t d(on) Turn-on delay time V CC = 3 V, I C = 5 A, 143 ns t r Current rise time R G = 6.8 Ω, V G = ±15 V, 16.5 ns (1) on Turn-on switching energy di/dt = 24 A/µs.14 mj t d(off) Turn-off delay time V CC = 3 V, I C = 5 A, 112 ns t f Current fall time R G = 6.8 Ω, V G = ±15 V, 149 ns (2) off Turn-off switching energy dv/dt = 76 V/µs 1.45 mj DS Rev 2 page 2/12

3 Diode Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V CC = 3 V, I C = 5 A, 148 ns t r Current rise time R G = 6.8 Ω, V G = ±15 V, 19.2 ns (1) on Turn-on switching energy di/dt = 262 A/µs, T J = 15 C.311 mj t d(off) Turn-off delay time V CC = 3 V, I C = 5 A, 11 ns t f Current fall time R G = 6.8 Ω, V G = ±15 V, 221 ns (2) off Turn-off switching energy dv/dt = 58 V/µs, T J = 15 C 1.98 mj t SC Short-circuit withstand time V CC 36 V, V G 15 V, T Jstart 15 C 6 µs R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink ach IGBT C/W ach IGBT, λ grease = 1 W/(m C).79 C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2 Diode Limiting values at T j = 25 C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 65 V I F Continuous forward current at (T C = 1 C) 5 A I (1) FP Pulsed forward current (t p = 1 ms) 1 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 4. lectrical characteristics of the diode Symbol Parameter Test conditions Min. Typ. Max. Unit V F (terminal) Forward voltage I F = 5 A I F = 5 A, T J = 15 C V t rr Reverse recovery time ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 5 A, V R = 3 V, V G = ±15 V, di/dt = 24 A/μs µc A rec Reverse recovery energy -.41 mj t rr Reverse recovery time - 26 ns Q rr Reverse recovery charge I F = 5 A, V R = 3 V, µc V G = ±15 V, di/dt = 262 A/μs, I rrm Reverse recovery current T J = 15 C - 58 A rec Reverse recovery energy mj DS Rev 2 page 3/12

4 NTC Symbol Parameter Test conditions Min. Typ. Max. Unit R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink ach diode C/W ach diode, λ grease = 1 W/(m C) -.9 C/W 1.3 NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R 25 Resistance T = 25 C 5 kω R 1 Resistance T = 1 C 493 Ω ΔR/R Deviation of R % B 25/5 B-constant 3375 K B 25/8 B-constant 3411 K T Operating temperature range C Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG NTC R (Ω) GADG NTCZ max 6 min typ T C ( C) T C ( C) 1.4 Package Table 6. ACPACK 1 package Symbol Parameter Min. Typ. Max. Unit V isol Isolation voltage (AC voltage, t = 6 s) 25 V T stg Storage temperature C CTI Comparative tracking index 2 L s Stray inductance module P1 - W loop 28.7 nh R s Module single lead resistance, terminal-to-chip 3.9 mω DS Rev 2 page 4/12

5 lectrical characteristics (curves) 2 lectrical characteristics (curves) Figure 3. IGBT output characteristics (V G = 15 V, terminal) Figure 4. IGBT output characteristics (T J = 15 C, terminal) I c (A) 8 T J = 25 C IGBT TCH I C (A) V 17 V 15 V IGBT OC25 13 V 11 V 6 T J = 15 C V G = 9 V V C (V) V C (V) I C (A) Figure 5. IGBT transfer characteristics (V C = 15 V, terminal) 8 IGBT OC25 Figure 6. Switching energy vs gate resistance (mj) 4. IGBT SLG V CC = 3 V, I C = 5 A, V G = ±15 V ON (T J = 15 C) 6 T J = 25 C 3. OFF (T J = 15 C) ON (T J = 25 C) 4 2 T J = 15 C OFF (T J = 25 C) V G (V) R G (Ω) DS Rev 2 page 5/12

6 lectrical characteristics (curves) Figure 7. Switching energy vs collector current (mj) IGBT SLC V CC = 3 V, R G = 6.8 Ω, V G = ±15 V Figure 8. IGBT reverse biased safe operating area (RBSOA) I C (A) IGBT OC25 T J = 125 C, V G = ±15 V, R G = 6.8 Ω 3 OFF (T J = 15 C) OFF (T J = 25 C) ON (T J = 25 C) ON (T J = 15 C) I C (A) V C (V) Figure 9. Diode forward characteristics I F (A) 8 6 T J = 15 C IGBT DVF Figure 1. Diode reverse recovery energy vs diode current slope rec (mj) IGBT OC25 V C = 3 V, V G = ±15 V, I F = 5 A T J = 15 C 4 2 T J = 25 C VF (V).6.3 T J = 25 C di/dt (A/µs) Figure 11. Diode reverse recovery energy vs forward current Figure 12. Diode reverse recovery energy vs gate resistance rec IGBT RR (mj) V C = 3 V, V G = ±15 V, R G = 6.8 Ω rec (mj) IGBT RR V C = 3 V, V G = ±15 V, I F = 5 A T J = 15 C.9 T J = 15 C T J = 25 C.3 T J = 25 C I F (A) R G (Ω) DS Rev 2 page 6/12

7 lectrical characteristics (curves) Figure 13. Inverter diode thermal impedance Figure 14. IGBT thermal impedance Zth ( C/W) IGBT MT Zth ( C/W) IGBT MT Zth(typ.)JH Zth(typ.)JH 1 Zth(max.)JC 1 Zth(max.)JC JC RC - Foster thermal network i r i ( C/W) τ i(s) JC RC - Foster thermal network i r i ( C/W) τ i(s) JH RC - Foster thermal network i r i ( C/W) τ i(s) t (s) JH RC - Foster thermal network i ri ( C/W) τ i(s) t (s) DS Rev 2 page 7/12

8 Test circuits 3 Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit C A A k k G L=1 µh + R G B B G C 3.3 µf D.U.T 1 µf V CC k k - k k AM15 4v 1 AM155v1 Figure 17. Switching waveform Figure 18. Diode reverse recovery waveform 9% VG 1% 9% VC Tr(Voff) Tcross 9% 1% 25 IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% AM156v1 DS Rev 2 page 8/12

9 Topology and pin description 4 Topology and pin description Figure 19. lectrical topology and pin description P T1 G1 G3 G5 U V W T2 G2 G4 G6 U U V V W W Figure 2. Package top view with sixpack pinout DS Rev 2 page 9/12

10 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of COPACK packages, depending on their level of environmental compliance. COPACK specifications, grade definitions and product status are available at: COPACK is an ST trademark. 5.1 ACPACK 1 sixpack solder pins package information Figure 21. ACPACK 1 sixpack solder pins package outline (dimensions are in mm) 32. 'W W G4 V 'V U 'U 28.8 G6 G T1 T P 16. P 12.8 W W G5 V V G3 U U G BSC.64± ± ± ± ± RF 62.8±.5 48±.3 41± ±.2 53± ±.5 12±.35 Section B-B 2.3 RF ±.2 B 3.2 BSC B Detail A 2.5±.2 A A 3.5 RF x45 4.5±.1 GADG MT_ _4 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DS Rev 2 page 1/12

11 Revision history Date Revision Changes 11-Oct Initial release. Table 7. Document revision history 16-Feb Updated features and removed maturity status indication from cover page. Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT thermal impedance. Updated Figure 21. ACPACK 1 sixpack solder pins package outline (dimensions are in mm). Minor text changes DS Rev 2 page 11/12

12 IMPORTANT NOTIC PLAS RAD CARFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 2 page 12/12

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged

More information

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel Automotive-grade 390 V internally clamped IGBT E SCIS 180 mj Features Datasheet - production data TAB DPAK 1 3 AEC-Q101 qualified 180 mj of avalanche energy @ T C = 150 C, L = 3 mh ESD gate-emitter protection

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating

More information

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters

More information

1200 V 600 A IGBT Module

1200 V 600 A IGBT Module 1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and

More information

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C

More information

Order code Marking Package Packaging. STGB30V60DF GB30V60DF D²PAK Tape & reel STGP30V60DF GP30V60DF TO-220 Tube

Order code Marking Package Packaging. STGB30V60DF GB30V60DF D²PAK Tape & reel STGP30V60DF GP30V60DF TO-220 Tube STGB30V60DF STGP30V60DF 600 V, 30 A very high speed trench gate fieldstop IGBT Datasheet preliminary data Features Maximum junction temperature : T J = 175 C Very high speed switching Negligible tail current

More information

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications

More information

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant Datasheet 100 V, 30 A power Schottky rectifier Features Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

More information

T610T-8FP. 6 A logic level Triac. Description. Features. Applications

T610T-8FP. 6 A logic level Triac. Description. Features. Applications 6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.

More information

STARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package

STARPOWER IGBT GD25PIT120C5S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1200V/25A PIM in one-package STARPOWER SEMICONDUCTOR IGBT GD2PIT12CS Molding Type Module 12V/2A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

More information

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features STTH16L6C-Y Automotive turbo 2 ultrafast high voltage rectifier Description Datasheet - production data A1 A2 K The STTH16L6C-Y is developed using ST s Turbo 2 6 V technology. It s specially suited for

More information

STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package

STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

More information

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STARPOWER IGBT GD800HTT65P4S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 650V/800A 6 in one-package

STARPOWER IGBT GD800HTT65P4S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 650V/800A 6 in one-package STARPOWER SEMICONDUCTOR IGBT GD8HTT65P4S Molding Type Module 65V/8A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

More information

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They

More information

STTH1R04. Ultrafast recovery diode. Description. Features

STTH1R04. Ultrafast recovery diode. Description. Features STTH1R4 Ultrafast recovery diode Datasheet - production data DO-41 STTH1R4 A K DO-15 STTH1R4Q Band indicates cathode side. Description The STTH1R4 series uses ST's new 4 V planar Pt doping technology.

More information

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

10 23, 24 21, 22 19, , 14

10 23, 24 21, 22 19, , 14 MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology

More information

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses Datasheet 100 V power Schottky rectifier Features A Negligible switching losses A High junction temperature capability Low leakage current K SMA K SMB Good trade-off between leakage current and forward

More information

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications

More information

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are

More information

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3PJT6L2S 6V/3A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600

More information

STTH10R04. High efficiency rectifier. Description. Features

STTH10R04. High efficiency rectifier. Description. Features STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK

More information

IGBT PIM Module, 15 A

IGBT PIM Module, 15 A IGBT PIM Module, 1 A GB1RF1K ECONO PIM PRODUCT SUMMARY V CES 1 V V CE(on) (typical). V t sc at T J = 1 C > 1 µs I C at T C = C 1 A FEATURES Low V CE(on) non punch through IGBT technology Low diode V F

More information

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as boost diode in continuous mode power factor

More information

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:

More information

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application: IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS

More information

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA AODB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They

More information

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L.

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.55V. Symbol V GE I C. 20 A 10 Forward Current T C =100 C 5 I FM. t SC P D T L. AOTFB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.

More information

Parameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC

Parameter Symbol Conditions Values Unit. V CC = 900 V, V CEM 1200 V V GE 15 V, Tv j 125 ºC IGBT/SiC Diode Co-pack Features Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent

More information

GSID300A120S5C1 6-Pack IGBT Module

GSID300A120S5C1 6-Pack IGBT Module 6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with

More information

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant Datasheet 60 V - 1 power Schottky rectifier K Features Negligible switching losses K SM K DO-41 Low forward voltage drop Surface mount miniature packages valanche rated ECOPCK 2 compliant K STmite flat

More information

STPS1045B. Power Schottky rectifier. Description. Features

STPS1045B. Power Schottky rectifier. Description. Features Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended

More information

STARPOWER IGBT GD800CUT170A3S/GD800CLT170A3S. General Description. Features. Typical Applications SEMICONDUCTOR TM. Molding Type Module

STARPOWER IGBT GD800CUT170A3S/GD800CLT170A3S. General Description. Features. Typical Applications SEMICONDUCTOR TM. Molding Type Module STARPOWER SEMICONDUCTOR TM IGBT GDCUT17A3S GDCLT17A3S Molding Type Module 17V/A Chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

IKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters

More information

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH5L06 is developed using St's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in

More information

Converter - Brake - Inverter Module (CBI 1) Trench IGBT

Converter - Brake - Inverter Module (CBI 1) Trench IGBT Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32

More information

GSID040A120B1A3 IGBT Dual Boost Module

GSID040A120B1A3 IGBT Dual Boost Module IGBT Dual Boost Module Features: High efficiency dual boost Ultrafast switching frequency Low Inductance Layout Lead Free, Compliant with RoHS Requirement Application: Solar inverter Bypass Diode Maximum

More information

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

More information

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07 Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter

More information

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7 MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the

More information

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed

More information

GSID300A125S5C1 6-Pack IGBT Module

GSID300A125S5C1 6-Pack IGBT Module 6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance

More information

Description. Table 1. Device summary (1) Lead finish

Description. Table 1. Device summary (1) Lead finish Aerospace 45 V power Schottky rectifier Datasheet - production data Description A K K his power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products.

More information

GHIS075A120T2P2 Si IGBT/ SiC SBD PIM Module

GHIS075A120T2P2 Si IGBT/ SiC SBD PIM Module Si IGBT/ SiC SBD PIM Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C =75A, T C =25 Low Switching Loss SiC SBD for boost diode: V F = 1.7V @ I F = 5A, T C =25 1%

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3. HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant

More information

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A VS-4MT2UHAPbF Half Bridge IGBT MTP (Ultrafast NPT IGBT), 8 A MTP PRIMARY CHARACTERISTICS V CES 2 V V CE(on) typical at V GE = 5 V 3.36 V I C at T C = 25 C 8 A Speed 8 khz to 3 khz Package MTP Circuit configuration

More information

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1. M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.

More information

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing

More information

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q

C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q QID3322 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 2 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E 1 2 3 6 M H 4 V

More information

Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH

Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.

More information

) unless otherwise specified Symbol Description Values Units

) unless otherwise specified Symbol Description Values Units IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss

More information

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive

More information

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1 CMDU-3KA Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1 (7) 95-77 Dual IGBTMOD KA-Series Module Amperes/17 Volts B F A G T C MEASURED POINT M C L T - ( TYP.) N R Z CE1 E C1 C E AA S - (3

More information

STARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR Rectifier 1800V/180A 6 in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS.

More information

IKW40N120T2 TrenchStop 2 nd Generation Series

IKW40N120T2 TrenchStop 2 nd Generation Series Low Loss DuoPack : IGBT in 2 nd generation TrenchStop with soft, fast recovery antiparallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time 10 s Designed for : Frequency Converters

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation

More information

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:

More information

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G) Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive

More information

Six-Pack XPT IGBT MIXA30W1200TML. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TML

Six-Pack XPT IGBT MIXA30W1200TML. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TML MIX3WTML Six-Pack XPT IGBT S = = 3 (sat) =.8 Part name (Marking on product) MIX3WTML, 3 8 8 NTC 3 7,, 9, E7873 7 Pin configuration see outlines. 3 9, Features: High level of integration Rugged XPT design

More information

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES)

More information

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide

More information

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP Ultrafast recovery - high voltage diode Main product characteristics I F(AV) V RRM T j V F (typ) t rr (typ) Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40. Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter G C E NPT-Technology

More information

T1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW

T1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU

More information

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high

More information

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1 STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62. Fast IGBT in NPT-technology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter NPT-Technology

More information

IXBT20N360HV IXBH20N360HV

IXBT20N360HV IXBH20N360HV High Voltage, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advance Technical Information V CS = V = A V C(sat).V TO-HV (IXBT) Symbol Test Conditions Maximum Ratings V CS = C to C V V CGR = C

More information

SGP20N60 SGW20N60. Fast IGBT in NPT-technology

SGP20N60 SGW20N60. Fast IGBT in NPT-technology Fast IGBT in NPTtechnology 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed for: Motor controls Inverter NPTTechnology for

More information

Symbol Parameter/Test Conditions Values Unit T C = T C =80 100

Symbol Parameter/Test Conditions Values Unit T C = T C =80 100 IGBT Module March 2 ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free

More information

C N V (4TYP) U (5TYP)

C N V (4TYP) U (5TYP) QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1

More information

Six-Pack XPT IGBT MIXA30W1200TMH. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TMH

Six-Pack XPT IGBT MIXA30W1200TMH. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TMH MIX3W12TMH Six-Pack XPT IGBT S = 12 25 = 43 (sat) = 1.8 Part name (Marking on product) MIX3W12TMH E 72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873

More information

AK AJ AT AR DETAIL "A" N M L K B AB (6 PLACES) DETAIL "B" TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5

AK AJ AT AR DETAIL A N M L K B AB (6 PLACES) DETAIL B TH1 (11) TH2 (10) NTC *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL

More information

SKP10N60 SKB10N60, SKW10N60

SKP10N60 SKB10N60, SKW10N60 Fast SIGBT in NPTtechnology with soft, fast recovery antiparallel EmCon diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time 10 µs Designed

More information

VNH9013Y. Automotive integrated H-bridge. Description. Features

VNH9013Y. Automotive integrated H-bridge. Description. Features Automotive integrated H-bridge Features PowerSSO-36 TP Description Datasheet - production data The device is an automotive integrated H-bridge intended for a wide range of automotive applications driving

More information

STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications

More information

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

More information

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low

More information

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)

More information

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information