IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
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- Beatrix Perkins
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1 PD INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction Temperature rated at 175 C Lead-Free C E n-channel IRGB3B6KPbF IRGS3B6KPbF IRGSL3B6KPbF V CES = 6V I C = 5A, T C =1 C at T J =175 C t sc > 1µs, T J =15 C V CE(on) typ. = 1.95V Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation TO-22AB IRGB3B6KPbF D 2 Pak IRGS3B6KPbF TO-262 IRGSL3B6KPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 78g I T C = 1 C Continuous Collector Current 5 A I CM Pulse Collector Current (Ref.Fig.C.T.5) 12 I LM Clamped Inductive Load current c 12 V ISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 25 V V GE Gate-to-Emitter Voltage ±2 P T C = 25 C Maximum Power Dissipation 37 W P T C = 1 C Maximum Power Dissipation 18 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT.41* C/W R θcs Case-to-Sink, flat, greased surface.5 R θja Junction-to-Ambient, typical socket mount d 62 R θja Junction-to-Ambient (PCB Mount, Steady State)e 4 Wt Weight 1.44 g * R θjc (end of life) =.65 C/W. This is the maximum measured value after 1 temperature cycles from -55 to 15 C and is accounted for by the physical wearout of the die attach medium /17/5
2 IRGB/S/SL3B6KPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.4 V/ C V GE = V, I C = 1mA (25 C-15 C) I C = 3A, V GE = 15V, T J = 25 C 5,6,7 V CE(on) Collector-to-Emitter Voltage V I C = 3A, V GE = 15V, T J = 15 C 8,9, I C = 3A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 25µA 8,9,1 V GE(th) / T J Threshold Voltage temp. coefficient -1 mv/ C V CE = V GE, I C = 1.mA (25 C-15 C) 11 gfe Forward Transconductance 18 S V CE = 5V, I C = 5A, PW = 8µs V GE = V, V CE = 6V I CES Zero Gate Voltage Collector Current 1 2 µa V GE = V, V CE = 6V, T J = 15 C V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V, V CE = V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge (turn-on) I C = 3A 17 Q ge Gate-to-Emitter Charge (turn-on) nc V CC = 4V CT1 Q gc Gate-to-Collector Charge (turn-on) V GE = 15V E on Turn-On Switching Loss I C = 3A, V CC = 4V CT4 E off Turn-Off Switching Loss µj V GE = 15V, R G = 1Ω, L = 2µH E tot Total Switching Loss T J = 25 C f t d(on) Turn-On delay time 46 6 I C = 3A, V CC = 4V t r Rise time ns V GE = 15V, R G = 1Ω, L = 2µH CT4 t d(off) Turn-Off delay time T J = 25 C t f Fall time 31 4 E on Turn-On Switching Loss I C = 3A, V CC = 4V CT4 E off Turn-Off Switching Loss µj V GE = 15V, R G = 1Ω, L = 2µH 12,14 E tot Total Switching Loss T J = 15 C f WF1,WF2 t d(on) Turn-On delay time 46 6 I C = 3A, V CC = 4V 13,15 t r Rise time ns V GE = 15V, R G = 1Ω, L = 2µH CT4 t d(off) Turn-Off delay time T J = 15 C WF1 t f Fall time WF2 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance V GE = V C oes Output Capacitance pf V CC = 3V 16 C res Reverse Transfer Capacitance 6 9 f = 1.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = 15 C, I C = 12A, Vp = 6V 4 V CC =5V,V GE = +15V to V,R G =1Ω CT2 SCSOA Short Circuit Safe Operating Area 1 µs T J = 15 C, Vp = 6V, R G = 1Ω CT3 V CC =36V,V GE = +15V to V WF3 I SC (Peak) Peak Short Circuit Collector Current 2 A WF3 Note to are on page
3 I C (A) I C A) I C (A) P tot (W) IRGB/S/SL3B6KPbF T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature µs µs 1 1ms DC Fig. 3 - Forward SOA T C = 25 C; T J 15 C Fig. 4 - Reverse Bias SOA T J = 15 C; V GE =15V 3
4 I CE (A) I CE (A) I CE (A) IRGB/S/SL3B6KPbF V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 8µs 4
5 I CE (A) IRGB/S/SL3B6KPbF I CE = 15A I CE = 3A I CE = 6A I CE = 15A I CE = 3A I CE = 6A V GE (V) V GE (V) Fig. 8 - Typical V CE vs. V GE T J = -4 C Fig. 9 - Typical V CE vs. V GE T J = 25 C T J = 25 C T J = 15 C I CE = 15A I CE = 3A I CE = 6A T J = 15 C 2 T J = 25 C V GE (V) V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 15 C Fig Typ. Transfer Characteristics V CE = 5V; tp = 1µs 5
6 Energy (µj) Swiching Time (ns) Swiching Time (ns) IRGB/S/SL3B6KPbF Energy (µj) 2 td OFF E OFF E ON td ON 5 t F t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 15 C; L=2µH; V CE = 4V, R G = 1Ω; V GE = 15V Fig Typ. Switching Time vs. I C T J = 15 C; L=2µH; V CE = 4V R G = 1Ω; V GE = 15V E OFF 1 td OFF 15 E ON 1 1 td ON t F 5 t R R G (Ω) R G (Ω) Fig Typ. Energy Loss vs. R G T J = 15 C; L=2µH; V CE = 4V I CE = 3A; V GE = 15V Fig Typ. Switching Time vs. R G T J = 15 C; L=2µH; V CE = 4V I CE = 3A; V GE = 15V 6
7 Capacitance (pf) V GE (V) IRGB/S/SL3B6KPbF Cies V 4V 8 1 Coes 6 4 Cres Q G, Total Gate Charge (nc) Fig. 16- Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 3A; L = 6µH 1 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 Ci= τi/ri Ci i/ri 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7
8 IRGB/S/SL3B6KPbF L 1K DUT L VCC 8 V + - Rg DUT 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver diode clamp / DUT L DC DUT 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit 8
9 IRGB/S/SL3B6KPbF % I CE 5 tf 25 5 TEST CURRENT VCE (V) % V CE 5% I CE ICE (A) VCE (V) tr 9% test current 1% test current 5% V CE ICE (A) Eoff Loss Time(µs) Eon Loss Time (µs) Fig. WF1- Typ. Turn-off Loss T J = 15 C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss T J = 15 C using Fig. CT I CE 2 VCE (V) 3 2 V CE 15 1 ICE (A) time (µs) Fig. WF3- Typ. S.C T C = 15 C using Fig. CT.3 9
10 IRGB/S/SL3B6KPbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27&2'( $66(%/('21::,17+($66(%/</,1(& Note: "P" in assembly line position indicates "Lead-Free",17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(& 1
11 IRGB/S/SL3B6KPbF D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'(,17(51$7,21$/ $66(%/('21:: 5(&7,),(5,17+($66(%/</,1(/ /2*2 $66(%/< /27&2'( )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 11
12 IRGB/S/SL3B6KPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE TO-262 Part Marking Information (;$3/( 7+,6,6$1,5// /27&2'( $66(%/('21::,17+($66(%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 12
13 IRGB/S/SL3B6KPbF D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 1.9 (.429) 1.7 (.421) 11.6 (.457) 11.4 (.449) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) (.69) (.61) 24.3 (.957) 23.9 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX. 4 Notes: V CC = 8% (V CES ), V GE = 2V, L = 28µH, R G = 22Ω. This is only applied to TO-22AB package. ƒ This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-1 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Energy losses include "tail" and diode reverse recovery. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. TO-22AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 5/5 13
14 Note: For the most current drawings please refer to the IR website at:
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
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AUTOMOTIVE GRADE AUIRGP466D1 AUIRGP466D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses G Maximum Junction temperature
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 6μs SCSOA Square RBSOA 1% of the parts tested for I LM Positive V
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
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IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous
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IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss
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Bulletin PD-079 08/05 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency Operation Reduced
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Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
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High Voltage IGBT w/ Sonic Diode IXGTN7A IXGHN7A IXGTN7AH IXGHN7AH S = 7V 9 = A (sat).v t fi(typ) = ns H Symbol Test Conditions Maximum Ratings S = C to C 7 V V CGR = C to C, R GE = M 7 V TO- (IXGT) V
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DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
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