TO-220AC. 1

Transcription

1 HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count CTHODE BSE CTHODE 4 HF5TB60PbF Ultrafast, Soft Recovery Diode V R = 600V V F (typ.)* =.3V I F(V) = 5 Q rr (typ.)= nc I RRM = 0 t rr (typ.) = 3ns 3 NODE PD-9574 di (rec)m /dt (typ.) = 50/µs Description International Rectifier's HF5TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 5 amps continuous current, the HF5TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF5TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-0C bsolute Maximum Ratings Parameter Max Units V R Cathode-to-node Voltage 600 V I T C = 00 C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 00 P T C = 5 C Maximum Power Dissipation 5 P T C = 00 C Maximum Power Dissipation 50 C T Operating unction and Storage Temperature Range -55 to +50 W T STG * 5 C 0/9/04

2 HF5TB60PbF Electrical T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode node Breakdown Voltage 600 V I R = 00µ.3.7 I F = 5 V FM Max Forward Voltage.5.0 V I F = 50 See Fig..3.7 I F = 5, T = 5 C I RM Max Reverse Leakage Current.5 0 V R = V R Rated See Fig. µ T = 5 C, V R = 0.8 x V R Rated D Rated C T unction Capacitance pf V R = 00V See Fig. 3 L S Series Inductance 8.0 nh Measured lead to lead 5mm from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 3 I F =.0, di f /dt = 00/µs, V R = 30V t rr See Fig. 5, 6 & ns T = 5 C t rr T = 5 C I F = 5 I RRM Peak Recovery Current T = 5 C I RRM See Fig. 7& T = 5 C V R = 00V Q rr Reverse Recovery Charge 375 T = 5 C nc Q rr See Fig. 9 & T = 5 C di f /dt = 00/µs di (rec)m /dt Peak Rate of Fall of Recovery Current 50 T = 5 C /µs di (rec)m /dt During t b See Fig. & 60 T = 5 C Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead Lead Temperature 300 C R thc Thermal Resistance, unction to Case.0 R th Thermal Resistance, unction to mbient 80 K/W R thcs ƒ Wt Thermal Resistance, Case to Heat Sink Weight g 0.07 (oz) Mounting Torque 6.0 Kg-cm lbf in in. from Case (.6mm) for 0 sec Typical Socket Mount ƒ Mounting Surface, Flat, Smooth and Greased

3 HF5TB60PbF Instantaneous Forward Current - IF () Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0 T = 50 C T = 5 C T = 5 C Reverse Current - IR (µ) unction Capacitance -CT (pf) T = 50 C T = 5 C 0. T = 5 C Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T = 5 C Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance vs. Reverse Voltage Thermal Response (Z thc ) D = PDM t t SINGLE PULSE Notes: (THERML RESPONSE). Duty factor D =t / t. Peak T = P DM x Z thc + TC t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics 3

4 HF5TB60PbF 40 0 V R = 00V T = 5 C T = 5 C 30 5 V R = 00V T = 5 C T = 5 C trr- (nc) I F = 50 I F = 5 Irr- ( ) 0 5 I F = 50 I F = 5 I F = 0 60 I F = di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt di f/dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt V R = 00V T = 5 C T = 5 C 0000 V R = 00V T = 5 C T = 5 C Qrr- (nc) I F = 50 I F = 5 I F = 0 di (rec) M/dt- ( /µs) 000 I F = 50 I F = 5 I F = di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4

5 HF5TB60PbF REVERSE RECOVERY CIRCUIT dif/dt DUST L = 70µH G V R = 00V 0.0 Ω Fig. 9 - Reverse Recovery Parameter Test Circuit D S IRFP50 D.U.T. 0 I F di /dt f t a. di f/dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 3 trr I RRM 4. Q rr - rea under curve defined by t rr and I RRM t rr X I RRM Q rr = 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions t b 4 Q rr 0.5 I RRM di(rec)m/dt I RRM 5

6 HF5TB60PbF TO-0C Package Outline Dimensions are shown in millimeters (inches) TO-0C Part Marking Information EXMPLE: THIS IS HF06TB0 LOT CODE 789 SSEMBLED ON WW 9, 00 IN THE SS EMBLY LINE "C" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE PRT NUMBER DTE CODE P = LED-FREE YER = 00 WEEK 9 LINE C EXMPLE: THIS IS HF06TB0 LOT CODE 789 SSEMBLED ON WW 9, 00 IN T HE S SEMBLY LINE "C" INTERNTIONL RECTIFIER LOGO S S E MB LY LOT CODE PRT NUMBER DTE CODE YER = 00 WEEK 9 P = LED-FREE Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 9045, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.0/04 6