IRGPC50F Fast Speed IGBT

Transcription

1 INSULATED GATE BIPOLAR TRANSISTOR PD A Fast Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve G V ES = 6V V E(sat).7V E GE = 5V, I = 39A Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. Absolute Maximum Ratings TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 7 T = ontinuous ollector urrent 39 A I M Pulsed ollector urrent 28 I LM lamped Inductive Load urrent 28 V GE Gate-to-Emitter Voltage ± V E ARV Reverse Voltage Avalanche Energy mj P T = 25 Maximum Power Dissipation W P T = Maximum Power Dissipation 78 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase.64 R θs ase-to-sink, flat, greased surface.24 /W R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -87 Revision

2 Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µA V (BR)ES Emitter-to-ollector Breakdown Voltage V V GE = V, I =.A V (BR)ES/ T J Temp. oeff. of Breakdown Voltage.62 V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage.4.7 I = 39A V GE = 5V 2. V I = 7A See Fig. 2, 5.7 I = 39A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temp. oeff. of Threshold Voltage -4 mv/ V E = V GE, I = 25µA g fe Forward Transconductance 2 3 S V E = V, I = 39A I ES Zero Gate Voltage ollector urrent 25 µa V GE = V, V E = 6V V GE = V, V E = 6V, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 84 I = 39A Q ge Gate - Emitter harge (turn-on) 25 n V = 4V See Fig. 8 Q gc Gate - ollector harge (turn-on) 5 67 V GE = 5V t d(on) Turn-On Delay Time 24 T J = 25 t r Rise Time 5 ns I = 39A, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time 2 36 Energy losses include "tail" E on Turn-On Switching Loss.7 E off Turn-Off Switching Loss 4.3 mj See Fig. 9,,, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 25 T J = 5, t r Rise Time 49 ns I = 39A, V = 48V t d(off) Turn-Off Delay Time 44 V GE = 5V, R G = 5.Ω t f Fall Time 4 Energy losses include "tail" E ts Total Switching Loss 9. mj See Fig., 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 3 V GE = V oes Output apacitance 34 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 4 ƒ =.MHz Notes: Repetitive rating; V GE =V, pulse width limited by max. junction temperature. ( See fig. 3b ) V =8%(V ES ), V GE =V, L=µH, R G = 5.Ω, ( See fig. 3a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -88

3 LO AD U RR ENT (A) Square wave: 6% of ra ted voltage For both: Duty cycle: 5% T J = 25 T s in k = 9 Gate drive as specified Power D issipation = 4W Triangular wave: lam p v oltage: 8 % of rated Ideal diodes. f, F re quency (kh z) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-em itter urrent (A) T = 25 J T J = 5 V G E = 5 V 2 µs P U L S E W ID TH. V E, ollector-to-em itter V oltage (V) I, ollector-to-emitter urrent (A ) T J = 2 5 T J = 5 V = V 5µs P UL S E W IDTH 5 5 V G E, G ate -to-e m itter V olta ge (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -89 Revision

4 M aximum D ollector urrent (A ) V G E = 5 V V E, ollecto r-to -Em itter Vo ltag e (V) V G E = 5 V 8 µs P UL S E W ID TH I = 78 A I = 39 A I = A T, ase Tem perature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Tem perature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature T he rm al R espons e (Z thj ). D = S ING L E P U L S E (TH E R M A L R E S PO N S E) 2. P e ak T J = P D M x Z th J + T t, R ectangular Pulse Duration (sec) N otes :. D uty fa c tor D = t / t 2 PDM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase -9

5 , apacitance (pf ) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V G E, Gate-to-Em itter Voltage (V ) V E = 4 8 V I = 3 9A V E, ollector-to-em itter V oltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q, Total G ate harge (n ) g Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (m J) V = 4 8 V V G E = 5 V T = 25 I = 3 9A To ta l S w itc hing Lo sse s (m J) R G = 2. Ω V GE = 5V V = 48 V I = 7 8A I = 39 A I = 2 A R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance W T, ase Temperature ( ) Fig. - Typical Switching Losses vs. ase Temperature -9

6 Total Sw itching Losses (m J ) R G = 2. Ω T = 5 V = 48 V V G E = 5 V I, o lle c to r-to -E m itte r u rre n t (A ) V G EE= V T = 2 5 J S A FE O P E RA TIN G A RE A I, ollecto r-to-e m itter urrent (A ) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V, o lle cto r-to-e m itte r V olta g e (V ) E Fig. 2 - Turn-Off SOA Refer to Section D for the following: Appendix : Section D- page D-5 Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit Fig. 4a - Switching Loss Test ircuit Fig. 4b - Switching Loss Waveform Package Outline 3 - JEDE Outline TO-247A (TO-3P) Section D - page D-3-92

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