V (4TYP) U (5TYP) L 0.69± ±0.25 M N P Q R S M6 Metric M6 T 0.63 Min Min.

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1 QID42 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) Dual IGBTMOD HVIGBT Module Amperes/4 Volts S NUTS (TYP) F A D F J (2TYP) N 7 8 H B E 2 6 M H 4 V (4TYP) G (TYP) R (DEEP) T (SREWING DEPTH) 4 6 K (TYP) 2 L (2TYP) U (TYP) Q P Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 8 7 Outline Drawing and ircuit Diagram Dimensions Inches Millimeters A. 4. B Dimensions Inches Millimeters L.69±. 7.±.2 M N.2. Features: Low V E(sat) reepage and learance meet IE 677- High Isolation Voltage Rugged SWSOA and RRSOA ompact Industry Standard Package D 4.88±. 24.±.2 E 2.24±. 7.±.2 F.8. G.4. H P.22. Q R.6 4. S M6 Metric M6 T.6 Min. 6. Min. Applications: Traction Medium Voltage Drives High Voltage Power Supplies J.2. U. x x. K V.28 Dia. 7. Dia. 9/2 Rev. 9

2 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) QID42 Amperes/4 Volts Absolute Maximum Ratings, T j = 2 unless otherwise specified Ratings Symbol QID42 Units Junction Temperature T j -4 to Storage Temperature T stg -4 to 2 ollector-emitter Voltage (V GE = V, T j = -4 to +2 ) V ES 4 Volts ollector-emitter Voltage (V GE = V, T j = - ) V ES 44 Volts Gate-Emitter Voltage (V E = V) V GES ±2 Volts ollector urrent, D (T = 82 ) I Amperes Peak ollector urrent (Pulse) I M * Amperes Diode Forward urrent** I F Amperes Diode Forward Surge urrent** (Pulse) I FM * Amperes I 2 t for Diode (t = ms) I 2 t ka 2 sec Maximum ollector Dissipation (T = 2, IGBT Part, T j(max) ) P Watts Mounting Torque, M6 Terminal Screws 44 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 9 Grams Isolation Voltage (harged Part to Baseplate, A 6Hz min.) V iso 9. kvolts Partial Discharge Q pd p (V = 48 V RMS, V2 = V RMS, f = 6Hz (Acc. to IE 287)) Maximum Short-ircuit Pulse Width, t psc µs (V 2V,, R G(off) 6Ω, ) Electrical haracteristics, T j = 2 unless otherwise specified ollector-utoff urrent I ES V E = V ES, V GE = V.8 ma Gate Leakage urrent I GES V GE = V GES, V E = V. µa Gate-Emitter Threshold Voltage V GE(th) I =.ma, V E = V Volts ollector-emitter Saturation Voltage V E(sat) I = A, V GE = V,.8 Volts I = A, V GE = V, 4.6. Volts Total Gate harge Q G V = 28V, I = A, V GE = V. µ Emitter-ollector Voltage** V E I E = A, V GE = V, 2.8 Volts * Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. **Represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (FWDi). I E = A, V GE = V,.2.8 Volts 2 9/2 Rev. 9

3 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) QID42 Amperes/4 Volts Electrical haracteristics, T j = 2 unless otherwise specified Input apacitance ies 9 nf Output apacitance oes V GE = V, V E = V, f = khz.22 nf Reverse Transfer apacitance res. nf Resistive Turn-on Delay Time t d(on) V = 28V,,. µs Load Rise Time t r,,. µs Switching Turn-off Delay Time t d(off) R G(off) = 9Ω, L S = nh.6 µs Times Fall Time t f.6 µs Turn-on Switching Energy E on,,,. J/P Turn-off Switching Energy E off, R G(off) = 9Ω,.4 J/P V = 28V, L S = nh, Diode Reverse Recovery Time** t rr V = 28V, I E = A,.7 µs Diode Reverse Recovery harge** Q rr,, * µ Diode Reverse Recovery Energy E rec L S = nh, 72 mj/p Stray Inductance (-E2) L SE 6 nh Lead Resistance Terminal-hip R E.8 mω Thermal and Mechanical haracteristics, T j = 2 unless otherwise specified Thermal Resistance, Junction to ase*** R th(j-c) Q Per IGBT.8 K/W Thermal Resistance, Junction to ase*** R th(j-c) D Per FWDi.7 K/W ontact Thermal Resistance, ase to Fin R th(c-f) Per Module,.8 K/W Thermal Grease Applied, λ grease = W/mK omparative Tracking Index TI 6 learance Distance in Air (Terminal to Base) d a(t-b). mm reepage Distance Along Surface d s(t-b) 64 mm (Terminal to Base) learance Distance in Air d a(t-t) 9 mm (Terminal to Terminal) reepage Distance Along Surface d s(t-t) 4 mm (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***T measurement point is just under the chips. 9/2 Rev. 9

4 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) QID42 Amperes/4 Volts OLLETOR URRENT, I OUTPUT HARATERISTIS V GE = 6V OLLETOR-URRENT, I OLLETOR-EMITTER SATURATION VOLTAGE V GE = V OLLETOR-URRENT, I TRANSFER HARATERISTIS V E = V GE T j = EMITTER URRENT, I E OLLETOR-EMITTER VOLTAGE, V E FORWARD HARATERISTIS APAITANE, ies, oes, res, (nf) OLLETOR-EMITTER SATURATION VOLTAGE, V E(sat) APAITANE VS. V E. oes - V GE = V res - f = khz EMITTER-OLLETOR VOLTAGE, V E OLLETOR-EMITTER VOLTAGE, V E GATE HARGE, QG, (μ) ies GATE-EMITTER VOLTAGE, V GE GATE-EMITTER VOLTAGE, V GE 2 V E = 28V GATE HARGE VS. V GE SWITHING ENERGIES, E on, E off, E rec, (J/PULSE) V = 28V R G(off) = 9Ω L s = nh E on E off E rec SWITHING ENERGIES, E on, E rec, (J/PULSE) V = 28V L s = nh E on E rec GATE RESISTANE, R G, (Ω) SWITHING ENERGIES, E off,, (J/PULSE) V = 28V L s = nh E off GATE RESISTANE, R G, (Ω) 4 9/2 Rev. 9

5 Powerex, Inc., 7 Pavilion Lane, Youngwood, Pennsylvania 697 (724) QID42 Amperes/4 Volts SWITHING TIMES, (ns) 2 SWITHING TIME V = 28V R G(off) = 9Ω t f t d(off) t d(on) t r - L s = nh -2. REVERSE REOVERY TIME, t rr, (ns) 2 REVERSE REOVERY V = 28V L s = nh EMITTER URRENT, I I rr t rr REVERSE REOVERY URRENT, I rr OLLETOR URRENT, I REVERSE BIAS SAFE OPERATING AREA (RBSOA) V 2V R G(off) = 9Ω 2 4 OLLETOR EMITTER VOLTAGE, V ES 2 7 SHORT IRUIT SAFE OPERATING AREA (SSOA) V V 2 R G(off) = 9Ω 2 4 OLLETOR EMITTER VOLTAGE, V ES REVERSE REOVERY URRENT, I rr REVERSE REOVERY SAFE OPERATING AREA (RRSOA) V 2V di/dt < 66A/µs 2 4 EMITTER-OLLETOR VOLTAGE, V E NORMALIZED TRANSIENT THERMAL IMPEDANE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANE HARATERISTIS (IGBT & FWDi) Single Pulse T = 2 Per Unit Base = R th(j-c) =.8K/W (IGBT) R th(j-c) =.7K/W (FWDi) TIME, (s) 9/2 Rev. 9