STARPOWER IGBT GD40PIK120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

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STARPOWER SEMIONDUTOR IGBT GD4PIK125S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

1 STARPOWER SEMIONDUTOR IGBT GD4PIK125S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features NPT IGBT technology Low switching loss μs short circuit capability V E(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DB technology Typical Applications Inverter for motor drive A and D servo drive amplifier Uninterruptible power supply Equivalent ircuit Schematic 215 STARPOWER Semiconductor Ltd. 7/15/215 1/12 DXB

2 Absolute Maximum Ratings T =25 o unless otherwise noted IGBT-inverter Symbol Description Value Unit V ES ollector-emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I ollector T =25 o T =85 o 4 A I M Pulsed ollector urrent t p =1ms 8 A P D Maximum Power T j =15 o 262 W Diode-inverter Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode ontinuous Forward urrent 4 A I FM Diode Maximum Forward urrent t p =1ms 8 A Diode-rectifier Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 16 V I O Average Output urrent 5Hz/6Hz,sine wave 4 A I FSM Surge Forward urrent V R =V,t p =ms,t j =45 o 6 A I 2 t I 2 t-value,v R =V,t p =ms,t j =45 o 18 A 2 s IGBT-brake Symbol Description Value Unit V ES ollector-emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I ollector T =25 o T = o 15 A I M Pulsed ollector urrent t p =1ms 3 A P D Maximum Power T j =15 o 141 W Diode-brake Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode ontinuous Forward urrent 15 A I FM Diode Maximum Forward urrent t p =1ms 3 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 15 o T jop Operating Junction Temperature -4 to +125 o T STG Storage Temperature Range -4 to +125 o V ISO Isolation Voltage RMS,f=5Hz,t=1min 25 V 215 STARPOWER Semiconductor Ltd. 7/15/215 2/12 DXB

3 IGBT-inverter haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit V E(sat) I =4A,V GE =15V, ollector to Emitter T j =25 o Saturation Voltage I =4A,V GE =15V, T j =125 o 2.65 V V GE(th) Gate-Emitter Threshold Voltage I =1.mA,V E =V GE, T j =25 o V I ES ollector ut-off urrent V E =V ES,V GE =V, T j =25 o 1. ma I GES Gate-Emitter Leakage urrent V GE =V GES,V E =V, T j =25 o 4 na R Gint Internal Gate Resistance / Ω ies Input apacitance 2.62 nf V E =25V,f=1MHz, Reverse Transfer res V GE =V.17 nf apacitance Q G Gate harge V GE = V 4 n t d(on) Turn-On Delay Time 225 ns t r Rise Time 5 ns t d(off) Turn-Off Delay Time 27 ns V =6V,I =4A, t f Fall Time 238 ns R G =24Ω,V GE =±15V, Turn-On Switching E T j =25 o on 3.7 mj E off Turn-Off Switching 2.85 mj t d(on) Turn-On Delay Time 23 ns t r Rise Time 55 ns t d(off) Turn-Off Delay Time 28 ns V =6V,I =4A, t f Fall Time 34 ns R G =24Ω,V GE =±15V, Turn-On Switching E T j =125 o on 4.6 mj E off Turn-Off Switching 4.5 mj I S S Data t P μs,v GE =15V, T j =125 o,v =9V, V EM 12V 18 A 215 STARPOWER Semiconductor Ltd. 7/15/215 3/12 DXB

4 Diode-inverter haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit V F Diode Forward I F =4A,V GE =V,T j =25 o Voltage I F =4A,V GE =V,T j =125 o 2. V Q r Recovered harge 2.6 μ I RM Peak Reverse V R =6V,I F =4A, Recovery urrent -di/dt=8a/μs,v GE =-15V 27 A E rec Reverse Recovery Energy T j =25 o 1.4 mj Q r Recovered harge 5. μ I RM Peak Reverse V R =6V,I F =4A, Recovery urrent -di/dt=8a/μs,v GE =-15V 37 A E rec Reverse Recovery Energy T j =125 o 2.6 mj Diode-rectifier haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit V F Diode Forward Voltage I F =4A,T j =15 o 1.6 V I R Reverse urrent T j =15 o,v R =16V 3. ma 215 STARPOWER Semiconductor Ltd. 7/15/215 4/12 DXB

5 IGBT-brake haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit V E(sat) I =15A,V GE =15V, ollector to Emitter T j =25 o Saturation Voltage I =15A,V GE =15V, T j =125 o 2.4 V V GE(th) Gate-Emitter Threshold Voltage I =1.mA,V E =V GE, T j =25 o V I ES ollector ut-off urrent V E =V ES,V GE =V, T j =25 o 1. ma I GES Gate-Emitter Leakage urrent V GE =V GES,V E =V, T j =25 o 4 na R Gint Internal Gate Resistance / Ω ies Input apacitance.99 nf V E =25V,f=1MHz, Reverse Transfer res V GE =V.7 nf apacitance Q G Gate harge V GE = V 156 n t d(on) Turn-On Delay Time 182 ns t r Rise Time 64 ns t d(off) Turn-Off Delay Time 36 ns V =6V,I =15A, t f Fall Time 335 ns R G =68Ω,V GE =±15V, Turn-On Switching E T j =25 o on 2.98 mj E off Turn-Off Switching 1.17 mj t d(on) Turn-On Delay Time 186 ns t r Rise Time 64 ns t d(off) Turn-Off Delay Time 321 ns V =6V,I =15A, t f Fall Time 383 ns R G =68Ω,V GE =±15V, Turn-On Switching E T j =125 o on 3.32 mj E off Turn-Off Switching 1.65 mj I S S Data t P μs,v GE =15V, T j =15 o,v =9V, V EM 12V 15 A 215 STARPOWER Semiconductor Ltd. 7/15/215 5/12 DXB

6 Diode-brake haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit V F Diode Forward I F =15A,V GE =V,T j =25 o Voltage I F =15A,V GE =V,T j =125 o 2.2 V Q r Recovered harge.5 μ I RM Peak Reverse V R =6V,I F =15A, Recovery urrent -di/dt=48a/μs,v GE =-15V 15 A E rec Reverse Recovery Energy T j =25 o.29 mj Q r Recovered harge 1. μ I RM Peak Reverse V R =6V,I F =15A, Recovery urrent -di/dt=48a/μs,v GE =-15V 16 A E rec Reverse Recovery Energy T j =125 o.64 mj NT haracteristics T =25 o unless otherwise noted Symbol Parameter Test onditions Min. Typ. Max. Unit R 25 Rated Resistance 5. kω R/R Deviation of R T = o,r =493.3Ω -5 5 % P 25 Power Dissipation 2. mw B 25/5 B-value R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 3375 K Module haracteristics T =25 o unless otherwise noted Symbol Parameter Min. Typ. Max. Unit L E Stray Inductance 6 nh R +EE 4. Module Lead Resistance,Terminal to hip R AA + 3. mω R thj R thh Junction-to-ase (per IGBT-inverter) Junction-to-ase (per Diode-inverter) Junction-to-ase (per Diode-rectifier) Junction-to-ase (per IGBT-brake) Junction-to-ase (per Diode-brake) ase-to-heatsink (per IGBT-inverter) ase-to-heatsink (per Diode-inverter) ase-to-heatsink (per Diode-rectifier) ase-to-heatsink (per IGBT-brake) ase-to-heatsink (per Diode-brake) ase-to-sink (per Module) M Mounting Torque, Screw:M N.m G Weight of Module 2 g K/W K/W 215 STARPOWER Semiconductor Ltd. 7/15/215 6/12 DXB

7 8 8 7 V GE =15V 7 V E =2V 6 6 I [A] o 125 o I [A] o o V E [V] V GE [V] Fig 1. IGBT-inverter Output haracteristics Fig 2. IGBT-inverter Transfer haracteristics V =6V R G =24Ω V GE =±15V T j =125 o 12 V =6V I =4A V GE =±15V T j =125 o E [mj] 6 E on E [mj] 8 6 E on 4 E off 4 E off I [A] R G [Ω] Fig 3. IGBT-inverter Switching vs. I Fig 4. IGBT-inverter Switching vs. R G 215 STARPOWER Semiconductor Ltd. 7/15/215 7/12 DXB

8 9 8 Module 1 IGBT 7 6 I [A] Z thj [K/W].1 2 R G =24Ω V GE =±15V T j =125 o V E [V] i: r i [K/W]: τ i [s]: t [s] 8 7 Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance E rec I F [A] 4 E [mj] o 25 o V =6V R G =24Ω V GE =-15V T j =125 o V F [V] I F [A] Fig 7. Diode-inverter Forward haracteristics Fig 8. Diode-inverter Switching vs. I F 215 STARPOWER Semiconductor Ltd. 7/15/215 8/12 DXB

9 6 5 4 V =6V I F =4A V GE =-15V T j =125 o 1 Diode E [mj] 3 E rec Z thj [K/W] i: r i [K/W]: τ i [s]: R G [Ω] t [s] Fig 9. Diode-inverter Switching vs. R G 8 Fig. Diode-inverter Transient Thermal Impedance V GE =15V 25 o I F [A] o 25 o I [A] o V F [V] V E [V] Fig 11. Diode-rectifier Forward haracteristics Fig 12. IGBT-brake-chopper Output haracteristics 215 STARPOWER Semiconductor Ltd. 7/15/215 9/12 DXB

10 o I F [A] o R [kω] V F [V] T [ o ] Fig 13. Diode-brake-chopper Forward haracteristics Fig 14. NT Temperature haracteristic 215 STARPOWER Semiconductor Ltd. 7/15/215 /12 DXB

11 ircuit Schematic Package Dimensions Dimensions in Millimeters 215 STARPOWER Semiconductor Ltd. 7/15/215 11/12 DXB

12 Terms and onditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. hanges of this product data sheet are reserved. 215 STARPOWER Semiconductor Ltd. 7/15/215 12/12 DXB

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed