C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

Transcription

1 Datasheet: 2D112 Rev. D 2D112A Silicon arbide Schottky Diode Zero Recovery Rectifier RM = 12 V = 1 A Q c = 61 n Features 12-Volt Schottky Rectifier Zero Reverse Recovery urrent Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature oefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Package TO-22-2 PIN 1 PIN 2 ASE Switch Mode Power Supplies Power Factor orrection Motor Drives Part Number Package Marking 2D112A TO D112 Maximum Ratings Symbol Parameter Value Unit Test onditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 12 V V D D Blocking Voltage 12 V (AVG) Average Forward urrent 1 17 A =15 =125 (Peak) Peak Forward urrent 25 A =125, T REP <1 ms, Duty=.5 RM Repetitive Peak Forward Surge urrent 5 A =25, t P =1 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge urrent 25 A =25, t P =1 µs, Pulse P tot Power Dissipation W =25 =125 T J, T stg Operating Junction and Storage Temperature -55 to +175 TO-22 Mounting Torque Nm lbf-in M3 Screw 6-32 Screw Subject to change without notice. 1

2 Forward urrent (A) I R Reverse urrent (μa) Electrical haracteristics Symbol Parameter Typ. Max. Unit Test onditions Note V F Forward Voltage V = 1 A T J =25 = 1 A T J =175 I R Reverse urrent µa = 12 V T J =25 = 12 V T J =15 Q Total apacitive harge 61 n = 12 V, = 1 A di/dt = 5 A/µs T J = 25 Total apacitance pf = V, T J = 25, f = 1 MHz = 2 V, T J = 25, f = 1 MHz = 4 V, T J = 25, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal haracteristics Symbol Parameter Typ. Unit R θj Thermal Resistance from Junction to ase.48 /W Typical Performance V F Forward Voltage (V) Reverse Voltage (V) Figure 1. Forward haracteristics Figure 2. Reverse haracteristics 2 2D112 Rev. D

3 (AVG) Forward urrent (A) (PEAK) Peak Forward urrent (A) apacitance (pf) Typical Performance % Duty 3% Duty 5% Duty 7% Duty D ase Temperature ( ) * Frequency > 1KHz Reverse Voltage (V) Figure 3. urrent Derating Figure 4. apacitance vs. Reverse Voltage Figure 5. Transient Thermal Impedance 3 2D112 Rev. D

4 Package Dimensions Package TO-22-2 POS Inches Millimeters Min Max Min Max A B D A J B E F S P Q X D E F G H Z 1 2 H G T U Y L M N P Q L M N V W S T U V W X Y z NOTE: 1. Dimension L, M, W apply for Solder Dip Finish 4 2D112 Rev. D

5 Recommended Solder Pad Layout TO-22-2 Part Number Package Marking 2D112A TO D112 The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 22/95/E on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 26. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. opyright ree, Inc. All rights reserved. The information in this document is subject to change without notice. ree, the ree logo, and Zero Recovery are registered trademarks of ree, Inc. ree, Inc. 46 Silicon Drive Durham, N 2773 USA Tel: Fax: D112 Rev. D