GC2X8MPS V SiC MPS Diode

Transcription

1 Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal Resistance 175 C Maximum Operating Temperature Temperature Independent Switching Behavior Package Case K Case Positive Temperature Coefficient of V F Extremely Fast Switching Speeds TO K dvantages Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling without Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capacitance Low Reverse Leakage Current pplications Boost Diode in Power Factor Correction (PFC) Switched Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Motor Drives Freewheeling / nti-parallel Diode in Inverters Solar Inverters LED and HID Lighting C-DC Converters & uxiliary Power Supplies bsolute Maximum Ratings (t T C = 25 C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage Continuous Forward Current (Per Leg / Per Device) Non-Repetitive Peak Forward Surge Current, Half Sine Wave Repetitive Peak Forward Surge Current, Half Sine Wave Non-Repetitive Peak Forward Surge Current i 2 t Value Non-Repetitive valanche Energy Diode Ruggedness Power Dissipation (Per Leg / Per Device) Operating and Storage Temperature Symbol Conditions Values V RRM V I F I F,SM I F,RM T C = 25 C, D = 1 40/800 T C = 135 C, D = 1 20/400 T C = 166 C, D = 1 8/16 T C = 25 C, tp = 10 ms 65 T C = 150 C, tp = 10 ms 52 T C = 25 C, tp = 10 ms 38 T C = 150 C, tp = 10 ms 26 I F,max T C = 25 C, tp = 10 µs 610 i 2 dt TC = 25 C, tp = 10 ms s E S L = 3 mh, I S = 8 90 Unit dv/dt V R = 0 ~ 960 V 1000 V/ns P tot T C = 25 C 269/538 W T j, T stg -55 to 175 C mj ug 2018 Rev1.2 Page 1 of 7

2 Electrical Characteristics Parameter Diode Forward Voltage Reverse Current Total Capacitive Charge Switching Time Total Capacitance Symbol V F I R Q C t s C Conditions Min. Values I F = 8, T j = 25 C 1.5 I F = 8, T j = 175 C 2 V R = 1200 V, Tj = 25 C 0.7 V R = 1200 V, Tj = 175 C 2.1 I F I F,MX di F/dt = 200 /μs T j = 175 C V R = 400 V 22 V R = 800 V 33 V R = 400 V V R = 800 V V R = 1 V, f = 1 MHz, T j = 25 C 545 V R = 800 V, f = 1 MHz, T j = 25 C 41 Typ. Max Unit V µ nc < 10 ns pf Thermal / Mechanical Characteristics Thermal Resistance, Junction Case Weight Mounting Torque * Per Device R thjc 0.56 C/W W T 6.1 T M 1.1 g Nm ug 2018 Rev1.2 Page 2 of 7

3 GC2X8MPS IF = f(vf,tj); tp = 10 µs IF = f(vf,tj); tp = 10 1 µs Figure 1: Typical Forward Characteristics Figure 2: Typical High Current Forward Characteristics IR = f(vr,tj) Ptot = f(tc) Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve ug 2018 Rev1.2 Page 3 of 7

4 I F = f(t C ); D = t P /T, t P = 10 µs C = f(v R ); T j = 25 C; f = 1 MHz Figure 5: Current Derating Curves Figure 6: Typical Junction Capacitance vs. Reverse Voltage Characteristics Q c = f(v R ); T j = 25 C; f = 1 MHz Figure 7: Typical Capacitive Charge vs. Reverse Voltage Characteristics E C = f(v R ); T j = 25 C; f = 1 MHz Figure 8: Typical Capacitive Energy vs. Reverse Voltage Characteristics ug 2018 Rev1.2 Page 4 of 7

5 Z th,jc = f(t P,D); D = t P /T Figure 9: Transient Thermal Impedance I F = (V F V BI )/R DI DIFF () Built-In Voltage (V BI ): V BI (T j ) = m*t j + n (V), m = -1.56e-03, n = 1.01 Differential Resistance (R DIFF ): R DIFF (T j ) = a*t 2 j + b*t j + c (Ω); a = 1.57e-06, b = 2.62e-04, c = I F = f(v F, T j ) Figure 10: Forward Curve Model ug 2018 Rev1.2 Page 5 of 7

6 Package Dimensions TO-247-3L Package Outline Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRCKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLSH, MOLD FLSH, MTERIL PROTRUSIONS ug 2018 Rev1.2 Page 6 of 7

7 RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ /EC (RoHS), as implemented November 15, RoHS Declarations for this product can be obtained from your GeneSiC representative. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-datinformation (RECh rticle 67) is also available upon RECh SVHC Declaration. RECh banned substance request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links Soldering Document: Tin-whisker Report: Reliability Report: Copyright 2018 GeneSiC Semiconductor Inc. ll Rights Reserved The information in this document is subject to change without notice ug 2018 Rev1.2 Published by GeneSiC Semiconductor, Inc Trade Center Place Suite 155 Dulles, V Page 7 of 7