CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

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1 CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on V F and V DS(on) Cu Baseplate, AlN DBC System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost V DS R DS(on) (T J = 25 C) E OFF (T J = 5 C) Package.2 kv 25 mω.6 mj Applications Solar Inverters UPS and SMPS Induction Heating Regen Drives 3-Phase PFC Motor Drives Part Number Package Marking CCS5M2CM2 Six-Pack CCS5M2CM2 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DS Drain - Source Voltage.2 kv V GS Gate - Source Voltage +25/- V I D Continuous Drain Current 87 V GS = 2 V, T C = 25 C A 59 V GS = 2 V, T C = 9 C Fig. 26 I D(pulse) Pulsed Drain Current 25 A Pulse width t P = 25 μs Rate limited by T jmax,t C = 25 C Fig. 28 Datasheet: CCS5M2CM2,Rev. B T J Junction Temperature 5 C T C,T STG Case and Storage Temperature Range -4 to +25 C V isol Case Isolation Voltage 2.5 kv DC, t = min L Stray Stray Inductance 3 nh Measured from pins to M Mounting Torque 5. N-m G Weight 8 g P D Power Dissipation 32 W T C = 25 C, T J 5 C Fig. 27 Subject to change without notice.

2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain - Source Breakdown Voltage.2 kv V GS, = V, I D = µa V GS(th) Gate Threshold Voltage 2.3 V DS = V, ID = 2.5 ma.6 V V DS = V, ID = 2.5 ma, T J = 5 C I DSS Zero Gate Voltage Drain Current 2 μa V DS =.2 kv, V GS = V I GSS Gate-Source Leakage Current.5 μa V GS = 2 V, V DS = V R DS(on) g fs On State Resistance Transconductance C iss Input Capacitance 2.8 C oss Output Capacitance.393 C rss Reverse Transfer Capacitance.4 E on Turn-On Switching Energy. mj E Off Turn-Off Switching Energy.6 mj mω VGS = 2 V, IDS = 5 A Fig V GS = 2 V, I DS = 5 A, T J = 5 C V DS = 2 V, IDS = 5 A 2 S V DS = 2 V, ID = 5 A, T J = 5 C nf V DS = 8 V, V GS = V f = MHz, V AC = 25 mv V DD = 6 V, V GS = +2V/-5V I D = 5 A, R G = 2 Ω Load = 2 μh T J = 5 C Note: IEC Definitions R G (int) Internal Gate Resistance.5 Ω f = MHz, V AC = 25 mv Q GS Gate-Source Charge 32 Q GD Gate-Drain Charge 3 Q G Total Gate Charge 8 t d(on) Turn-on delay time 2 ns t r(on) V SD fall time 9% to % 3 ns t d(off) Turn-off delay time 5 ns t f(off) V SD rise time % to 9% 9 ns Free-Wheeling SiC Schottky Diode Characteristics Fig. 8 Fig. 6,7 Fig. 8 nc V DD= 8 V, I D= 5 A Fig. 5 V DD = 8V, R LOAD = 8 Ω V GS = +2/-2V, R G = 3.8 Ω T J = 25 C Note: IEC Definitions Symbol Parameter Min. Typ. Max. Unit Test Conditions Note Fig. 2 V SD.5.7 I F = 5 A, V GS = Diode Forward Voltage V I F = 5 A, T J = 5 C Q C Total Capacitive Charge.28 μc Fig. 9 I F Continuous Forward Current 5 A V GS = -5 V, T c = 9 C Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET.37.4 T c = 9 C, P D = 5 W C/W R thjcd Thermal Resistance Juction-to-Case for Diode T c = 9 C, P D = 3 W NTC Characteristics Symbol Condition Typ. Max. Unit R 25 T C = 25 C 5 kω Delta R/R T C = C, R = 48 Ω ±5 % P 25 T C = 25 C mw B 25/5 R 2 = R 25 exp[b 25/5 (/T 2 -/(298.5K))] 338 K B 25/8 R 2 = R 25 exp[b 25/8 (/T 2 -/(298.5K))] 344 K 2 CCS5M2CM2,Rev. B

3 2 6 T J = -4 C t p < 5 µs V GS = 2 V 2 6 t p < 5 µs V GS = 2 V Drain Current, I DS (A) 2 8 Drain Current, I DS (A) 2 8 V GS = V 4 V GS = V Figure. Typical Output Characteristics T J = -4 C Figure 2. Typical Output Characteristics T J = 25 C Drain Current, I DS (A) T J = 5 C t p < 5 µs V GS = 2 V V GS = V On Resistance, R DS On (p.u.) I DS = 5 A V GS = 2 V t p < 5 µs Junction Temperature, T J ( C) Figure 3. Typical Output Characteristics T J = 5 C Figure 4. Normalized On-Resistance vs. Temperature 6 5 V GS = 2 V t p < 5 µs T J = 5 C 9 8 I DS = 5 A t p < 5 µs On Resistance, R DS On (mω) T J = -4 C T J = 25 C On Resistance, R DS On (mω) T J = -4 C T J = 5 C Drain Source Current, I DS (A) Gate Source Voltage, V GS (V) Figure 5. Normalized On-Resistance vs. Drain Current For Various Temperatures Figure 6. Normalized On-Resistance vs. Gate-Source Voltage for Various Temperatures 3 CCS5M2CM2,Rev. B

4 On Resistance, R DS On (mω) V GS = 2 V V GS = 4 V V GS = 6 V V GS = 8 V V GS = 2 V I DS = 5 A t p < 5 µs t p < 5 µs T J = 5 C T J = -4 C Junction Temperature, T J ( C) Figure 7. On-Resistance vs. Temperature for Various Gate-Source Voltages Gate-Source Voltage, V GS (V) Figure 8. Transfer Characteristic for Various Junction Temperatures V GS = -5 V V GS = -2 V V GS = V -5 Drain-Source Currnmt, I DS (A) -5 T J = -4 C tp < 5 µs - V GS = -2 V V GS = -5 V V GS = V tp < 5 µs - Figure 9. Diode Characteristic at -4 C Figure. Diode Characteristic at 25 C V GS = V V GS = V V GS = -5 V V GS = V -5 V GS = 2 V -5 V GS = -2 V T J = 5 C tp < 5 µs - T J = -4 C tp < 5 µs - Figure. Diode Characteristic at 5 C Figure 2. 3 rd Quadrant Characteristic at -4 C 4 CCS5M2CM2,Rev. B

5 V GS = V V GS = V V GS = V V GS = 2 V -5 V GS = V -5 tp < 5 µs - V GS = 2 V T J = 5 C tp < 5 µs - Figure 3. 3 rd Quadrant Characteristic at 25 C Figure 4. 3 rd Quadrant Characteristic at 5 C 2 Gate-Source Voltage, V GS (V) 5 5 V DS = 8 V I DS = 5 A I GS = ma Capacitance (pf) f = MHz V AC = 25 mv C ISS C OSS C RSS Gate Charge (nc) Figure 5. Typical Gate Charge Characteristics Figure 6. Typical Capacitances vs. Drain-Source Voltage ( - 25 V) C ISS V DD = 6 V T J = 5 C L = 2 µh R G = 2 Ohms V GS = +2V/-5V E on Capacitance (pf) C OSS C RSS Switching Loss (mj) E off f = MHz V AC = 25 mv Figure 7. Typical Capacitances vs. Drain-Source Voltage ( - kv) Drain to Source Current, I DS (A) Figure 8. Inductive Switching Energy vs. Drain Current For V DS = 6V, R G = 2 Ω 5 CCS5M2CM2,Rev. B

6 V DD = 8 V T J = 5 C L = 2 µh R G = 2 Ohms V GS = +2V/-5V E on t on Switching Loss (mj) E off Time, t on, t r, t d(on) (ns) t r t d(on) Drain to Source Current, I DS (A) V GS : +2/-5V R G = 2 Ohms V DD = 8 V Figure 9. Inductive Switching Energy vs. Drain Current For V DS = 8 V, R G = 2 Ω Figure 2. Turn-on Timing vs. Drain Current V GS : +2/-5V R Load = 6 Ohms V DD = 8 V t on t r t d(on) Time, t off, t f, t d(off (ns) t d(off) t off Time, t on, t r, t d(on) (ns) V GS : +2/-5V R G = 2 Ohms V DD = 8 V t f Gate Resistance, R G (Ohms) Figure 2. Turn-off Timing vs. Drain Current Figure 22. Turn-on Timing vs. External Gate Resistor V GS : +2/-5V R Load = 6 Ohms V DD = 8 V t off t on Time, t off, t f, t d(off (ns) t d(off) t r Time, t on, t r, t d(on) (ns) t d(on) t r Gate Resistance, R G (Ohms) V GS : +2/-5V R G = 2 Ohms V DD = 8 V R Load = 6 Ohms Junction Temperature, T J ( C) Figure 23. Turn-off Timing vs. External Gate Resistor Figure 24. Turn-on Timing vs. Junction Temperature 6 CCS5M2CM2,Rev. B

7 Time, t off, t f, t d(off (ns) V GS : +2/-5V R G = 2 Ohms V DD = 8 V R Load = 6 Ohms t d(off) Junction Temperature, T J ( C) t f t off Drain-Source Continous Current, I DS (DC) (A) T J 5 C Case Temperature, T C ( C) Figure 25. Turn-on Timing vs. Junction Temperature Figure 26. Continous Drain Current Derating vs Case Temperature Maximum Dissipated Power, P tot (W) T J 5 C Case Temperature, T C ( C) Figure 27. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature... Limited by R DS On ms µs T C = 25 C D =, Parameter: t p.. ms µs Figure 28. MOSFET Safe Operating Area µs MOSFET Junction-Case Thermal Response, Zth JC ( C/W).. D = 9% D = 7% D = 5% D = 3% D = % D = 5% D = 2% D = % D =.5% D =.2% Single Pulse. E-6 E-6 E-6 E-3 E-3 E-3 Time (s) t p D = t p / T T Diode Junction-Case Thermal Response, Zth JC ( C/W).. D = 9% D = 7% D = 5% D = 3% D = % D = 5% D = 2% D = % D =.5% D =.2% Single Pulse. E-6 E-6 E-6 E-3 E-3 E-3 Time (s) t p D = t p / T T Figure 29. MOSFET Junction to Case Thermal Impedance Figure 3. Diode Junction to Case Thermal Impedance 7 CCS5M2CM2,Rev. B

8 NTC Resistance (Ohms) NTC Temperature ( C) Figure 3. NTC Resistance vs NTC ttemperature Figure 3. Resistive Switching Time Description Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part and Part 2. [CPWR-AN2, CPWR-AN3] 8 CCS5M2CM2,Rev. B

9 Package Dimensions (mm) This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 23 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 9 CCS5M2CM2,Rev. B Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax:

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