GCMS020A120B1H1 1200V 20 mohm SiC MOSFET Module
|
|
|
- Agnes McKinney
- 5 years ago
- Views:
Transcription
1 1200V 20 mohm SiC MOSFET Module Features: Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Easy of Paralleling Applications: Solar Inverters High Voltage DC/DC Converters Motor Drives EV Chargers UPS Absolute Maximum Ratings (T C =25 unless otherwise specified) Symbol Description Value Units V DSmax Drain-Source Voltage 1200 V V GSmax Gate-Source Voltage Absolute Maximum values -10/+25 V V GSop Gate-Source Voltage Recommended Operational Values -5/20 V I D(DC) Continuous Drain Current V GS =20V,T C =25 0 C 95 A V GS =20V,T C =100 0 C 80 A I D(pluse) Pulsed Drain Current Pulse width t p limited by T jmax 160 A P D Power Dissipation T c =25 0 C,T j =150 0 C 305 W Page 1 of 8 Rev /15/2016
2 Electrical Characteristics of MOSFET (T C =25 unless otherwise specified) Symbol Description Conditions Min Typ Max Unit V (BR)DSS Drain - Source Breakdown Voltage V GS =0V,I D =100uA 1.2 KV V DS = 10 V, I D =20 ma, T j =25 0 C 2.9 V GS(th) (chip) Gate Threshold Voltage V DS = 10 V, I D =20 ma, T j =125 0 C 2.4 V V DS = 10 V, I D =20 ma, T j =150 0 C 2.3 V DS = 10 V, I D =4 ma, T j =25 0 C 2.9 V GS(th) (terminal) Gate Threshold Voltage V DS = 10 V, I D =4 ma, T j =125 0 C 2.2 V V DS = 10 V, I D =4 ma, T j =150 0 C 2.1 I DSS Zero Gate Voltage Drain Current V DS = 1.2 kv, V GS = 0V 1 ma I GSS Gate-Source Leakage Current V GS = 20 V, V DS = 0V 400 na R DS(on) (chip) On State Resistance V GS = 20 V, I DS =80 A, T J = 25 C 20 V GS = 20 V, I DS =80 A, T J = 150 C 42 mω V GS = 20 V, I DS = 80 A, T J = 25 C 20 R DS(on) (terminal) On State Resistance V GS = 20 V, I DS = 80 A, T J = 125 C 28 mω V GS = 20 V, I DS = 80 A, T J = 150 C 32 g fs Transconductance V DS = 20 V, I DS = 80 A, Tj=25 0 C 30.2 V DS = 20 V, I DS = 80 A, Tj=150 0 C 26.4 S C iss(chip) Input Capacitance 3786 C oss(chip) Output Capacitance V DS = 1000V, f = 1MHz, V AC = 25 mv 300 C rss(chip) Reverse Transfer Capacitance 20 nf Tj=25 0 C 1.0 E on Turn-On Switching Energy Tj=125 0 C 1.5 V DD = 600 V, V GS = -5V/+20V I D = 80 A, R G(ext) = 20 Ω Tj=150 0 C 1.6 Tj=25 0 C 0.3 mj E off Turn-Off Switching Energy Tj=125 0 C 0.6 Tj=150 0 C 0.8 R G(int) Internal Gate Resistance f =1MHz, V AC = 25 mv 0.9 Ω Page 2 of 8 Rev /15/2016
3 Q GS Gate-Source Charge 56 Q GD Gate-Drain Chrage V DD = 800 V, V GS = -5V/+20V, I D = 80 A, 74 Q G Total Gate Chrage 230 nc Tj=25 0 C 104 t d(on) Turn-on delay time Tj=125 0 C 98 Tj=150 0 C 96 Tj=25 0 C 63 t r t d(off) Rise Time Turn-off delay time V DD = 600V, V GS = -5/+20V, I D = 80 A, R G(ext) = 20 Ω, Timing relative to V DS Tj=125 0 C 56 Tj=150 0 C 57 Tj=25 0 C 181 Tj=125 0 C 216 ns Tj=150 0 C 220 Tj=25 0 C 94 t f Fall Time Tj=125 0 C 99 Tj=150 0 C 99 R θjcm Thermal Resistance Junction- To-Case for MOSFET C /W Built-in SiC Body Diode Characteristics (T C =25 0 C unless otherwise specified) Symbol Description Conditions Min Typ Max Unit V SD(chip) Diode Forward Voltage I SD = 40 A, V GS = -5V, T j =25 0 C 3.6 I SD = 40 A, V GS = -5V, T j =150 0 C 3.3 V T rr Reverse Recovery Time 108 ns Q rr Reverse Recovery Charge I SD = 80 A, V GS = -5V, T j =25 0 C,V R =800V, 566 nc di F /dt= 2200 A/μs I rrm Peak Reverse Recovery Current 30 A Page 3 of 8 Rev /15/2016
4 Free-Wheeling SiC Diode Characteristics (T C =25 unless otherwise specified) Symbol Description Conditions Min Typ Max Unit I F = 80 A, V GS = 0 V,T j =25 0 C 2.5 V F(terminal) Diode Forward Voltage I F = 80 A, V GS = 0 V,T j =125 0 C 2.9 V I F = 80 A, V GS = 0 V,T j =150 0 C 3.0 Q C Total Capacitive Charge V R = 1200 V, T J = 27 C 129 nc R θjc Diode Thermal Resistance: Junction-To-Case C /W T C =25 0 C,T j =175 0 C 94 I F(chip) Continuous Diode Forward Current T C =125 0 C,T j =175 0 C 52 A T C =150 0 C,T j =175 0 C 35 Module Symbol Description Min Typ Max Unit V iso Isolation Voltage(All Terminals Shorted) f = 50Hz, 1minute 2500 V T J Maximum Junction Temperature 150 T JOP Maximum Operating Junction Temperature Range T stg Storage Temperature R θcs Case-To-Sink (Conductive Grease Applied) 0.1 /W T Mounting Screw:M N m G Weight 25 g Page 4 of 8 Rev /15/2016
5 Tj=25 VGS=10V VGS=12V VGS=14V VGS=16V VGS=18V VGS=20V Tj=150 VGS=10V VGS=12V VGS=14V VGS=16V VGS=18V VGS=20V I DS (A) 80 I DS (A) V DS (V) V DS (V) Fig.1 Typical Output Characteristics Tj=25 0 C (terminal) Fig.2 Typical Output Characteristics Tj=150 0 C (terminal) E (mj) VDD = 600 V, VGS = -5V/+20V RG(ext) = 20 ohm Eon,TJ =125 Eoff,TJ =125 Eon,TJ =150 Eoff,TJ =150 E (mj) VDD = 600 V, VGS = -5V/+20V ID = 80 A Eon,TJ =125 Eoff,TJ =125 Eon,TJ =150 Eoff,TJ = ID (A) Fig.3 Typical Switching Loss vs. Collector Current Rg ( ) Fig.4 Typical Switching Loss vs. Gate Resistance ZthJC:MOSFET ZthJC:DIODE ZthJC (K/W) 0.30 ZthJC (K/W) T (s) Fig.5 Transient thermal impedance (MOSFET) T (s) Fig.6 Transient thermal impedance (Free-Wheeling SiC Diode) Page 5 of 8 Rev /15/2016
6 TJ =25 TJ =125 TJ = IF(A) VF(V) Fig.7 Forward Characteristics of Diode Fig.8 Capacitance (Free-Wheeling SiC Diode) Fig.9 Recovery Charge (Free-Wheeling SiC Diode) Fig.10 Reverse Characteristics (Free-Wheeling SiC Diode) Page 6 of 8 Rev /15/2016
7 Internal Circuit Package Outline (Unit: mm): Page 7 of 8 Rev /15/2016
8 Revision History Date Revision Notes 5/29/ Initial release of preliminary datasheet 4/15/ Add the test data and revised package drawing Preliminary Data Sheet Global Power Technologies Group Prism Place Lake Forest, CA TEL (949) FAX (949) Web site: Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, RoHS Declarations for this product can be obtained from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact our office at GPTG Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by Global Power Technologies Group. GPTG reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Page 8 of 8 Rev /15/2016
GSID300A120S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 46 V GS = 20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-4B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 63 A 4 mω Features Chip Outline C2M SiC MOSFET technlogy High Blocking Voltage
GSID040A120B1A3 IGBT Dual Boost Module
IGBT Dual Boost Module Features: High efficiency dual boost Ultrafast switching frequency Low Inductance Layout Lead Free, Compliant with RoHS Requirement Application: Solar inverter Bypass Diode Maximum
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS =20 V, T C = 25 C A 71 V GS =20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-25B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 98 A 25 mω Features Chip Outline High Blocking Voltage with Low On-Resistance
GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:
IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS
Chip Outline. Symbol Parameter Value Unit Test Conditions Note 36 A 27 V GS = 20 V, T C = 100 C. -55 to +175
CPM2-12-8B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 12 V 36 A 8 mω Features Chip Outline High Blocking Voltage with Low On-Resistance High
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 12.5 V GS = 20 V, T C = 100 C.
V DS 12 V CPM2-12-16B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Chip Outline I D @ 2 C R DS(on) 19 A 16 mω New C2M SiC MOSFET technlogy High Blocking Voltage
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.
C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance
Package. Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 40 V GS = 15 V, T C = 100 C.
C3M39K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 63 A 3 mω C3M TM SiC MOSFET technology Optimized package with separate
Package TO Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 40 V GS = 20 V, T C = 100 C.
V DS 2 V C2M42D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 6 A 4 mω High Blocking Voltage with Low On-Resistance High Speed Switching
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 19.7 V GS = 15 V, T C = 100 C.
C3M7512K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 12 V 3 A 75 mω C3M TM SiC MOSFET technology Optimized package with separate
Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22.5 V GS = 15 V, T C = 100 C.
C3M651J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 1 V 35 A 65 mω C3M TM SiC MOSFET technology Low parasitic inductance with
Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.
C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low
Package. TAB Drain S S G. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 13.5 V GS = 15 V, T C = 100 C
C3M121K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 1 V 22 A 12 mω C3M TM SiC MOSFET technology Optimized package with separate
GSID300A125S5C1 6-Pack IGBT Module
6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 24 V GS = 20 V, T C = 100 C.
V DS 12 V C2M812D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 36 A 8 mω High Blocking Voltage with Low On-Resistance High Speed
GHIS075A120T2P2 Si IGBT/ SiC SBD PIM Module
Si IGBT/ SiC SBD PIM Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C =75A, T C =25 Low Switching Loss SiC SBD for boost diode: V F = 1.7V @ I F = 5A, T C =25 1%
Package TO Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 6 V GS = 20 V, T C = 100 C.
V DS 1 V CM1D Silicon Carbide Power MOSFET CM TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 5 C R DS(on) 1 A mω High Blocking Voltage with Low On-Resistance High Speed Switching
Package TO Symbol Parameter Value Unit Test Conditions Note. V GS =20 V, T C = 25 C Fig. 19 A 60 V GS =20 V, T C = 100 C.
V DS 2 V C2M252D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 9 A 25 mω High Blocking Voltage with Low On-Resistance High Speed
CAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse
CAS300M17BM2 1.7kV, 8.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A, 1 C R DS(on) 1.7 kv 23 mj 8. mω Features Ultra Low Loss
CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode
Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss
CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C
CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current
CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M12CM2 1.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
C2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D512A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 8.5 A Q c = 28 nc Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D112A Silicon Carbide Schottky Diode Zero Recovery Rectifier RM RM = 12 12 V V ( =135 C) = 1 = 14.5 A A Q c = 61 nc 61 nc Q c Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward
C5D05170H Silicon Carbide Schottky Diode Z-Rec Rectifier
C5D517H Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 17 V I F, ( =135 C) = 8.8 A Q c = 69 nc Features Package 1.7kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
C2D20120D Silicon Carbide Schottky Diode Zero Recovery Rectifier
C2D212D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 12 V ( =135 C) = 29 A ** Q c = 122 nc ** Features 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency
GC15MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
GB2X100MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
TO-247-3L Inner Circuit Product Summary I C) R DS(on)
Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
E4D20120A. Silicon Carbide Schottky Diode E-Series Automotive. Features. Package. Benefits. Applications. Maximum Ratings (T C V DS 900 V I D 11.
E4D1A Silicon Carbide Schottky Diode E-Series Automotive V DS I D @ 25 C R DS(on) 9 V 11.5 A 28 mω Features Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency
GB01SLT V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 160 C) = 1 A Q C = 4 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
C4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =13) = 9 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
GAP3SLT33-220FP 3300 V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM = 3300 V I F (Tc 125 C) = 0.3 A Q C = 3 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
Z-Rec Rectifier. C4D08120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications
C4D812 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 11 Q c = 37 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
GC2X8MPS V SiC MPS Diode
Silicon Carbide Schottky Diode V RRM I F (Tc = 135 C Q C = 1200 V C) = 40 * = 66 nc* Features High valanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal
C3D04065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward
C3D02060E Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D6E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
C3D08065A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D865 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 11 Q c = 2 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
SPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
C3D04060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)
C3DF Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) Features -Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
C3D16065D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1665D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent
PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET
Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses
Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide
SPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
OptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)
Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive
OptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
OptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
OptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
OptiMOS 3 Power-MOSFET
BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Product Summary V DS 8 V R DS(on)max @ T j = 5 C.7 Ω Q g,typ 1 nc Qualified
PSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses
Rev. 1 16 June 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C I D 20.7
Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).22 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET
LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit
OptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 8 V R DS(on).2 m Features N-channel - Enhancement mode AEC qualified I D 3 A H-PSOF-8- Tab MSL up to 26 C peak reflow 75 C operating temperature Green product
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
OptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
OptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
STARPOWER IGBT GD1000HFL170P2S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 1700V/1000A 2 in one-package
STARPOWER SEMICONDUCTOR IGBT GD1HFL17P2S Molding Type Module 17V/1A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
CID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier
CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode
OptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
OptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS V R DS(on).5 m Features N-channel - Enhancement mode AEC qualified MSL up to 26 C peak reflow 75 C operating temperature I D 3 A P/G-HSOF-8- Tab 8 Tab Green
P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
Final data P-TO Maximum Ratings Parameter Symbol Value Unit I D
SPP8N8C3, SPI8N8C3 SP8N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).65 Ω New revolutionary high voltage technology Ultra low gate charge I D 8 Periodic avalanche rated Extreme dv/dt rated Ultra
OptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
BSS123. Rev K/W. R thja
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25
500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
BUK B. N-channel TrenchMOS standard level FET
Rev. 4 24 September 28 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
OptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
OptiMOS -P Small-Signal-Transistor
SPD5P3L OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS -3 V R DS(on),max 7 mω I D -5 A 175 C operating temperature Avalanche rated dv /dt rated
N-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
OptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW5N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated
OptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
OptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current
Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package
PSMN2R6-40YS. N-channel LFPAK 40 V 2.8 mω standard level MOSFET
Rev. 1 23 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
CoolMOS Power Transistor
CoolMOS Power Transistor Features Product Summary V DS @ T j,max 65 V Lowest figure-of-merit R ON xq g R DS(on),max @T j = 25 C.25 Ω Ultra low gate charge 6.6 Q g,typ Extreme dv/dt rated 26 nc High peak
PSMN8R3-40YS. N-channel LFPAK 40 V 8.6 mω standard level MOSFET
Rev. 1 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
OptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
PSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET
Rev. 1 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
CoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability
SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.
Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature
OptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
OptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
OptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
OptiMOS -5 Power-Transistor
IPCN4S5L-R9 OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max.9 mw Features OptiMOS - power MOSFET for automotive applications I D A PG-TDSON-8-34 N-channel - Enhancement mode - Logic Level
CoolMOS TM Power Transistor
IPW6R125CP CoolMOS TM Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V DS @ T j,max 65 V R DS(on),max.125 Ω Q g,typ 53 nc High peak
SIPMOS Small-Signal-Transistor
Type SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic level BSS131 Product Summary V DS 24 V R DS(on),max 14 Ω I D.1 A dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23
OptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4) 7.2 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-1 MSL1 up to 26 C peak reflow 175
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
OptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I