P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

Transcription

1 PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -4 V Gate-Source Voltage V GS ±2 V Continuous Drain Current T C = 25 C -45 T C = 7 C Pulsed Drain Current 1 I DM -15 Avalanche Current I AS -45 Avalanche Energy 2 L =.1mH E AS 12 mj Power Dissipation I D -36 T c = 25 C 5 T c = 7 C Junction & Storage Temperature Range T J, T stg -55 to 15 C S P D 32 A W THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient R θja 75 Junction-to-Case R θjc Pulse width limited by maximum junction temperature. 2 VDD = -2V. Starting TJ = 25 C. C / W ELECTRICAL CHARACTERISTICS (T J = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA -4 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25µA Gate-Body Leakage I GSS V DS = V, V GS = ±2V ±1 na Zero Gate Voltage Drain Current I DSS V DS = -32V, V GS = V 1 µa V DS = -3V, V GS = V, T J = 55 C 1 1

2 Drain-Source On-State Resistance 1 R DS(ON) V GS = -4.5V, I D = -15A V GS = -1V, I D = -25A mω Forward Transconductance 1 g fs V DS = -5V, I D = -25A 24 S On-State Drain Current 1 I D(ON) V DS = -5V, V GS = -1V, -15 A DYNAMIC Input Capacitance C iss Output Capacitance C oss V GS = V, V DS = -15V, f = 1MHz 4 43 Reverse Transfer Capacitance C rss Gate Resistance R g V GS = -15mV, V DS = V, f = 1MHz Ω pf Total Gate Charge 2 Q g 4 45 Gate-Source Charge 2 Q gs V DS =.5V (BR)DSS, V GS = -1V, 1 13 Gate-Drain Charge 2 Q gd I D =-25A 5 8 Turn-On Delay Time 2 t d(on) 11 Rise Time 2 t r V DS = -2V, R L =.75Ω 75 Turn-Off Delay Time 2 t d(off) I D 1A, V GS = -1V, R GEN =6Ω 89 nc ns Fall Time 2 t f 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 C) Continuous Current I S -25 A Forward Voltage 1 V SD I F = I S, V GS = V V Reverse Recovery Time t rr 28 ns I F = -25A, dl F /dt = 1A / µs Reverse Recovery Charge Qrr 26 nc 1 Pulse test : Pulse Width 3 µsec, Duty Cycle 2%. 2 Independent of operating temperature. 2

3 Output Characteristics On-Resistance VS Drain Current -ID, Drain-To-Source Current(A) V G S = 1 V V G S = 7 V V G S = 5 V V G S = 4.5 V V G S = 3.5 V V G S = 3 V VGS = 4.5V VGS = 1V ID, Drain-To-Source Current On-Resistance VS Gate-To-Source On-Resistance VS Temperature.5 RDS(ON) x ID = -2A VGS, Gate-To-Source Voltage(V) RDS(ON) x 1.6 RDS(ON) x 1.4 RDS(ON) x 1.2 RDS(ON) x 1. RDS(ON) x.8 VGS = -1V RDS(ON) x.6 ID = -25A TJ, Junction Temperature( C) -ID, Drain-To-Source Current(A) Transfer Characteristics VDS= -5V Tj=25 C Tj=125 C Tj= - 2 C -VGS, Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics ID= - 25A VDS= -1V VGS, Gate-To-Source Voltage(V) Qg, Total Gate Charge(nC) 3

4 35 Capacitance Characteristic Body Diode Forward Voltage VS Source current 1.E E+2 C, Capacitance(pF) Ciss Coss Crss IS, Source Current(A) 1.E+1 1.E+ 1.E-1 1.E-2 1.E-3 1.E-4 T J =15 C T J =25 C VSD, Source-To-Drain Voltage(V) 1 Safe Operating Area Single Pulse Maximum Power Dissipation 5 -ID, Drain Current(A) E+1 Operation in This Area is Lim ited by RDS(ON) NOTE : 1.V GS= 1V 2.TC=25 C 3.RθJC = 2.5 C/W 4.Single Pulse 1us 1ms 1m s 1m s DC Power(W) Transient Thermal Response Curve SINGLE PULSE RθJC = 2.5 C/W TC=25 C Single Plus Time (s) r(t), Normalized Effective Transient Thermal Resistance 1.E+ 1.E-1 Duty cycle= Single Pulse Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.5 /W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*rthjc 1.E-2 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 T1, Square Wave Pulse Duration[sec] 4

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