Part Number UJDS06508T

Transcription

1 Features Co-packaged surge bypass diode 175 SiC maximum operating junction temperature Extremely fast switching not dependent on temperature Essentially no reverse or forward recovery Positive temperature coefficient for safe operation and ease of paralleling RoHS compliant 8-65 SiC Schottky with Surge Bypass Diode... CSE 1 Si 2 CSE Typical pplications Power converters Switching-mode power supplies Power factor correction modules Part Number 3 Package SiC Marking UJDS658T TO-22-3 UJDS658T Descriptions United Silicon Carbide, Inc offers the xr series of high-performance SiC Schottky diodes. With zero reverse recovery charge and 175 maximum junction temperature, USCI s diodes are ideally suited for highfrequency and high-efficiency power systems with minimum cooling requirements. This product co-packages a surge bypass silicon diode to reduce component count in PFC circuits. Typical Connection in a PFC Circuit (Si) L 3 (SiC) Rev. Sales@unitedsic.com 1

2 Maximum Ratings SiC Schottky Diode Parameter DC Blocking oltage Repetitive Peak Reverse oltage, T j =25 Surge Peak Reverse oltage Maximum DC Forward Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Current Non-Repetitive valanche Energy Power Dissipation Maximum Junction Temperature Operating and Storage Temperature Symbol DC RRM RSM I F I FSM I F,max E S P Tot 8-65 SiC Schottky with Surge Bypass Diode... Test Conditions T C = 132 T C = 25, 8.3ms Half Sine Pulse T C = 25, 1ms T j = 25, L = 5mH, Ipk=5.5, DD =1 T C = 25 T C = 132 alue T J,max 175 T j, T STG -55 to mj W Si Diode Parameter Symbol Test Conditions alue DC Blocking oltage 6 Repetitive Peak Reverse oltage, T j =25 6 Surge Peak Reverse oltage 6 Maximum DC Forward Current T C = 15 1 Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Current T C = 25, 1ms 75 T C = Power Dissipation P Tot T C = DC RRM RSM I F I FSM I F,max Maximum Junction Temperature T J,max 175 Operating and Storage Temperature T j, T STG -55 to 175 Thermal Characteristics T C = 25, 8.3ms Half Sine Pulse Parameter symbol Component alue Min Typ Max Thermal Resistance R qjc SiC Diode 2.4 /W Thermal Resistance 1 R qjc Si Diode 1.4 /W W Rev. Sales@unitedsic.com 2

3 Electrical Characteristics 8-65 SiC Schottky with Surge Bypass Diode... F SiC Schottky Diode (T J = +25 unless otherwise specified) Parameter Symbol Test Conditions alue Min Typ Max Forward oltage I F = 8, T J = I F = 8, T J = I F = 8, T J = R =65, T j = Reverse Current I R R =65, T J = m Total Capacitive Charge Q C R =4, I F =8, di/dt=25/ms 13 nc Total Capacitance C R =1, f=1mhz R =3, f=1mhz R =6, f=1mhz pf Si Diode (T J = +25 unless otherwise specified) Parameter Symbol Test Conditions alue Min Typ Max Forward oltage F I F = 1, T J = R =6, T j =25 Reverse Current I R R =6, T J =15 Reverse Recovery Time t rr I F = 1, T J = 25 I F = 1, T J =175 R =3, I F =1, di/dt=5/ms, Ramp Recovery R =3, I F =1, di/dt=1/ms, Ramp Recovery m ns Rev. Sales@unitedsic.com 3

4 Power Disspiation, P Tot (W) Forward Current,I F () Reverse Current, I R () Forward Current, I F () Typical Performance SiC Schorttky Diode 1.E SiC Schottky with Surge Bypass Diode E E E E-8 1.E Reverse oltage, R () Forward oltage, F () Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics D =.1 D =.3 D =.5 D =.7 D = T C () Figure 3 Power dissipation T C () Figure 4 Diode forward current Rev. Sales@unitedsic.com 4

5 Forward Current, I F () Capacitance, C (pf) Thermal Impedance, Z qjc (/W) 8-65 SiC Schottky with Surge Bypass Diode Reverse oltage, R () Figure 5 Capacitance vs. reverse voltage 1.1 D =.5 D =.2 D =.1 D =.5.1 D =.2 D =.1 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 6 Transient thermal impedance Si Diode Forward oltage, F () Figure 7 Typical forward characteristics Rev. Sales@unitedsic.com 5

6 Mechanical Characteristics 8-65 SiC Schottky with Surge Bypass Diode... Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. 6

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