Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C

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1 Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K CASE G (1) CASE D (2) S (3) Part Number Package Marking UJN125K TO-247-3L UJN125K Features Typical Applications Low On-Resistance R DS(on)max of.45w Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Switch Mode Power Supplies Extremely fast switching not dependent on temperature Power Factor Correction Modules Low gate charge Motor Drives Low intrinsic capacitance Induction Heating RoHS compliant Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-source voltage V DS 12 V Gate-source voltage V GS DC AC (1) -2 to +3-2 to +2 V Continuous drain current I D T C = 25 C T C = 125 C T j = 125 C Pulsed drain current I DM 8 T j = 175 C A A A Power dissipation P tot T C = 25 C 23 W Operating and storage temperature T J, T STG -55 to 175 C Max lead temperature for soldering, 1/8 from Case for 5 Seconds (1) +2V AC rating applies for turn-on pulses <2ns applied with external R G > 1W. T L 25 C Rev. C, December For more information go to

2 Electrical Characteristics (T J = +25 C unless otherwise specified) Typical Performance - Static xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Parameter Symbol Test Conditions Value Min Typ Max Units Drain-source breakdown voltage BV DS V GS =-2V, I D =1mA 12 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance I D I G R DS(on) V DS = 12V, V GS = -2V, T J = 25 C V DS = 12V, V GS = -2V, T J = 175 C V GS =-2V, T j =25 C V GS =-2V, T j =175 C V GS =2V, I D =2A, T J = 25 C V GS =V, I D =2A, T J = 25 C V GS =2V, I D =2A, T J = 175 C V GS =V, I D =2A, T J = 175 C V G(th) V DS = 5V, I D = 7mA V R G V GS = V, f = 1MHz 5 W ma ma mw Rev. C, December For more information go to

3 Typical Performance - Dynamic xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Parameter symbol Test Conditions Value Min Typ Max Input capacitance C iss V DS = 1V, 12 Output capacitance C oss V GS = -2V, 154 Reverse transfer capacitance C rss f = 1kHz 146 Effective output capacitance, energy related Total gate charge Gate-drain charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy V DS = V to 6V, C oss(er) 91 pf V GS = -2V Q G 17 V Q DS =6V, I D = 3A, GD 74 V GS =-15V to 2.5V Q GS 1 t d(on) 3 t r V DS =6V, I D =3A, 28 t Gate Driver =-15V to d(off) 32 +5V, t f R 35 G,EXT = 2.5W, E ON Inductive Load, 467 E OFF T J = 25 C 515 E TOTAL 982 t d(on) 32 t r V DS =6V, I D =3A, 3 t d(off) Gate Driver =-15V to 32 t f +5V, R G,EXT = 2.5W, 33 E ON Inductive Load, 512 E OFF T J = 15 C 448 E TOTAL 96 Units pf nc ns mj ns mj Thermal Characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R qjc.65 C/W Rev. C, December For more information go to

4 Drain Leakage Current, I D (A) Typical Performance Diagrams xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V Figure 1 Typical output characteristics Figure 2 Typical output characteristics at T j = 25 C at T j = 125 C 6 4 Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V 1.E-4 1.E-5 1.E-6-55 C 25 C 125 C 175 C 2 1.E-7 1.E E Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage at T j = 175 C at V GS = -2V Rev. C, December For more information go to

5 Gate-Source Voltage, V GS (V) On-Resistance, R DS(on) (mw) Capacitance, C (pf) xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Tj = 25 C 8 Tj = 125 C 1 C iss 7 6 Tj = 175 C 5 1 C oss 4 3 C rss Gate-Source Voltage, V GS (V) Figure 5 Typical capacitances at 1kHz at V GS = -2V Figure 6 Typical transfer characteristics at V DS = 5V Tj = 25 C Tj = 125 C Tj = 175 C Gate Charge, Q G (nc) Figure 7 Typical gate charge at V DS = 6V and I D = 3A Figure 8 Typical drain-source on-resistance at V GS = V Rev. C, December For more information go to

6 Power Dissipation, P tot (W) Threshold Voltage, V G(th) (V) E OSS (mj) xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Junction Temperature, T j ( C) Figure 9 Threshold voltage vs. Tj Figure 1 Typical stored energy in C OSS at V DS = 5V and I D = 7mA at V GS = -2V ms 1ms Case Temperature, T C ( C) ms 1ms 1ms DC Figure 11 Total power Dissipation Figure 12 Safe operation area T c = 25 C, Parameter t p Rev. C, December For more information go to

7 Thermal Impedance, Z qjc ( C/W) Gate Current, I G (A) Gate Current, I G (A) xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K 1.E-4 1.E+ Tj = 25 C 1.E-5 1.E-1 Tj = 125 C 1.E-6 Tj = 25 C 1.E-2 Tj = 175 C Tj = 125 C 1.E-7 Tj = 175 C 1.E-3 1.E-8 1.E-4 1.E Gate-Source Voltage, V GS (V) 1.E Gate-Source Voltage, V GS (V) Figure 13 Typical gate leakage current Figure 14 Typical gate forward current at V DS = V at V DS = V E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Pulse Time, t p (s) Figure 15 Maximum transient thermal impedance D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse Rev. C, December For more information go to

8 xj SiC Series 45mW - 12V SiC Normally-On JFET UJN125K Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. C, December For more information go to