PRELIMINARY TO-247. S(3) - Power Factor Correction Internal Schematic - Induction Heating - UPS - Motor Drive. Conditions. T j = 125 C T C = 25 C
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1 NormallyOFF Trench Power JFET Features: Compatible with Standard Gate Driver ICs Positive Temperature Coefficient for Ease of Paralleling Temperature Independent Switching Behavior 175 C Maximum Operating Temperature R DS(on)max of.63 Ω Voltage Controlled 4 Low Gate Charge Low Intrinsic Capacitance SJEP12R63 Product Summary BV DS 12 V R DS(ON)max.63 Ω E TS,typ 44 µj G(1) D(2,4) Applications: TO247 Solar Inverter SMPS S(3) Power Factor Correction Internal Schematic Induction Heating UPS Motor Drive MAXIMUM RATINGS Parameter Symbol Conditions Value Unit Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation GateSource Voltage I D, Tj=125 I D, Tj=175 I DM T C = 25 C 6 A t SC V DD < 8 V, T C < 125 C 5 µs P D V GS T j = 125 C 3 A T j = 175 C 2 T C = 25 C 25 W static 15 to +3 V AC (2) 15 to +15 V Operating and Storage Temperature T j, T j,stg 55 to +175 C Lead Temperature for Soldering (1) Limited by pulse width (2) Rg EXT =.5 ohm, t p < 2ns T sold 1/8" from case < 1 s 26 C THERMAL CHARACTERISTICS Parameter Thermal Resistance, junctiontocase Thermal Resistance, junctiontoambient Symbol R th,jc R th,ja Typ Value Max.6 5 Unit C / W May 29 Rev 1.3 1/7
2 SJEP12R63 ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Value Typ Max Unit Off Characteristics DrainSource Blocking Voltage Total Drain Leakage Current Total Gate Reverse Leakage BV DS I DSS I GSS V GS = V, I D = 6 µa 12 V DS = 12 V, V GS = V, Tj = 2 12 V DS = 12 V, V GS = V, Tj = 175 o C 6 V DS = 12 V, V GS < 15 V, Tj = 2 V DS = 12 V, V GS < 15 V, Tj = 175 o C 2 V GS = 15 V, VDS = V.2.6 V GS = 15 V, VDS = 12V.2 V µa ma On Characteristics DrainSource Onresistance Gate Threshold Voltage Gate Forward Current Gate Resistance R DS(on) V GS(th) I GFWD R G R G(ON) I D = 12 A, V GS = 3 V, T j = 25 C I D = 12 A, V GS = 3 V, T j = 125 C V DS = 1 V, I D = 34 ma.75 V GS = 3 V f = 1 MHz, drainsource shorted V GS >2.7V; See Figure Ω V 4 ma 4 Ω.25 Ω Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, energy related C iss C oss C rss C o(er) V DD = 1 V V DS = V to 48 V, V GS = V pf Switching Characteristics Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Total Gate Charge GateSource Charge GateDrain Charge t on V DS = 6 V, I D = 24 A, t r Inductive Load, T J = t off Gate Driver = +15V, 1V, t f Rg EXT = 2.5ohm E on E See Figure 15 and application note for off gate drive recommendations E ts t on t r t off t f E on E off E ts Q g Q gs Q gd V DS = 6 V, I D = 24 A, Inductive Load, T J = 15 o C Gate Driver = +15V, 1V, Rg EXT = 2.5ohm See Figure 15 and application note for gate drive recommendations V DS = 6 V, I D = 1 A, V GS = V ns uj ns uj nc May 29 Rev 1.3 2/7
3 SJEP12R63 Figure 1. Typical Output Characteristics I D = f(v DS ); T j = 25 C; parameter: V GS Figure 2. Typical Output Characteristics I D = f(v DS ); T j = 125 C; parameter: V GS I D, DrainSource Current (A) V 2.5 V 2. V 1.5 V V DS, DrainSource Voltage (V) I D, DrainSource Current (A) V V V V V DS, DrainSource Voltage (V) Figure 3. Typical Output Characteristics I D = f(v DS ); T j = 175 C; parameter: V GS Figure 4. Typical Transfer Characteristics I D = f(v GS ); V DS = 5 V I D, DrainSource Current (A) V 2.5 V 2. V 1.5 V I D, DrainSource Current (A) V DS, DrainSource Voltage (V) V GS, GateSource Voltage (V) Figure 5. GateSource Current I GS = f(v GS ); parameter: T j Figure 6. DrainSource Onresistance R DS(on) = f(i D ); V GS = 3.; parameter: Tj I GS, GateSource Current (A) o C o C R DS(on), DrainSource Onresistance o C V GS, GateSource Voltage (V) I D, Drain Current (A) May 29 Rev 1.3 3/7
4 Figure 7. DrainSource Onresistance R DS(ON) = f(t j ); parameter: I GS PRELIMINARY SJEP12R63 Figure 8. DrainSource Onresistance R DS(ON) = f(i GS ); T j = R DS(on), DrainSource Onresistance (Ω) mA.12 1mA R DS(on), DrainSource Onresistance (Ω) T j, Junction Temperature ( C) I GS, GateSource Current (ma) Figure 9. Typical Capacitance C = f(v DS ); V GS = V; f = 1 MHz Figure 1. Gate Charge Q g = f(v GS ); V DS = 6V; I D = 5A, T j = 1.E+4 3. C, Capacitance (pf) 1.E+3 1.E+2 C iss C rss C oss V GS, GateSource Voltage (V) E V DS, DrainSource Voltage (V) Q g, Total Gate Charge (nc) Figure 11. Gate Threshold Voltage Figure 12. DrainSource Leakage V th = f(t j ) I D = f(v DS ); V GS = V; parameter: Tj V TH, Gate Threshold Voltage (V) mV/ o C 1.25 Max 1. Typical T j, Junction Temperature ( o C) I D, Drain Leakage Current (A) 1E3 175 o C 1E4 1E5 1 1E6 1E7 1E8 1E BV DS, DrainSource Blocking Voltage (V) May 29 Rev 1.3 4/7
5 SJEP12R63 E, Switching Energy (uj) Figure 13. Switching Energy Losses E s = f(i D ); V DS = 6V; GD = +15V/1V, R GEXT = 2.5ohm 7 Tj = 6 Tj = 15 o C E TS 5 4 E OFF 3 2 E ON I D, Drain Current (A) E, Switching Energy (uj) Figure 14. Switching Energy Losses E s = f(r GEXT ); V DS = 6V; I D = 24A, GD = +15V/1V Tj = Tj = 15 o C E TS E OFF E ON Rg EXT, External Gate Resistance, (Ω) Figure 15. Inductive Load Switching Circuit May 29 Rev 1.3 5/7
6 SJEP12R63 DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b c D D D e E E L L Q ØP ØP May 29 Rev 1.3 6/7
7 SJEP12R63 Published by SemiSouth Laboratories, Inc. 21 Research Boulevard Starkville, MS USA SemiSouth Laboratories, Inc. 28 Information in this document supersedes and replaces all information previously supplied. Information in this document is provided solely in connection with SemiSouth products. SemiSouth Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this document without notice. No license, express or implied to any intellectual property rights is granted under this document. Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. May 29 Rev 1.3 7/7
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