n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

Transcription

1 IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low V F Diode 3Vpk Repetitive Transient Capacity G % of the Parts Tested for I LM Positive V CE (ON) Temperature Co-Efficient E Tight Parameter Distribution Lead Free Package Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low V CE(on), low switching losses and Ultra-low V F Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI n-channel V CES = V I C = A, T C = C T J(max) = C V CE(on) typ. I C = A C G C E TO-7AD G C E Gate Collector Emitter Standard Pack Base part number Package Type Orderable part number Form Quantity IRG7PH3UDMPbF TO-7AD Tube IRG7PH3UDMPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage V V (B R)Tr ansient Repetitive Transient Collector-to-Emitter Voltage h 3 I T C = C Continuous Collector Current I T C = C Continuous Collector Current I CM Pulse Collector Current, V GE =V dg A I LM Clamped Inductive Load Current, V GE =V c I T C = C Diode Continous Forward Current I T C = C Diode Continous Forward Current I FM Diode Maximum Forward Current d V GE Continuous Gate-to-Emitter Voltage ±3 V P T C = C Maximum Power Dissipation 79 W P T C = C Maximum Power Dissipation 7 T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.3 in. (.mm) from case) Mounting Torque, -3 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.7 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) f.3 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface). R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 3 International Rectifier April, 3

2 IRG7PH3UDMPbF Electrical T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Col lector-to-e mitter B reakdown Vol tage V V GE = V, I C = µa e V(B R)CES / T J T emperature Coeff. of B reakdown Voltage. V/ C V GE = V, I C = ma ( C- C) V CE(on) Collector-to-Emitter Saturation Voltage.9. V I C = A, V GE = V, T J = C.3 I C = A, V GE = V, T J = C V GE(th) Gate Threshold Voltage 3.. V V CE = V GE, I C = µa gfe Forward Transconductance S V CE = V, I C = A, PW = 3µs I CES Collector-to-Emitter Leakage Current. µa V GE = V, V CE = V V GE = V, V CE = V, T J = C V FM Diode Forward Voltage Drop.. V I F = A. I F = A, T J = C I GES Gate-to-Emitter Leakage Current ± na V GE = ±3V Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 3 I C = A Q ge Gate-to-Emitter Charge (turn-on) nc V GE = V Q gc Gate-to-Collector Charge (turn-on) 3 V CC = V I C = A, V CC = V, V GE = V E off Turn-Off Switching Loss µj R G = Ω, L = µh,l S = nh, T J = C Energy losses include tail t d(off) Turn-Off delay time ns I C = A, V CC = V, V GE = V t f Fall time R G = Ω, L = µh,l S = nh, T J = C I C = A, V CC = V, V GE =V E off Turn-Off Switching Loss µj R G = Ω, L = µh,l S = nh, T J = C Energy losses include tail t d(off) Turn-Off delay time 9 ns I C = A, V CC = V, V GE = V t f Fall time R G = Ω, L = µh,l S = nh, T J = C C ies Input Capacitance 9 pf V GE = V C oes Output Capacitance V CC = 3V C res Reverse Transfer Capacitance f =.Mhz T J = C, I C = A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 9V, Vp =V Rg = Ω, V GE = +V to V Notes: V CC = % (V CES ), V GE = V, R G = Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN- for guidelines for measuring V (BR)CES safely. R θ is measured at T J approximately 9 C. FBSOA operating conditions only. V GE = V, T J = 7 C, PW µs. International Rectifier April, 3

3 I CE (A) I CE (A) V GE(th), Gate Threshold Voltage (Normalized) I C (A) I C (A) P tot (W) IRG7PH3UDMPbF Fig. - Maximum DC Collector Current vs. Case Temperature. T C ( C) I C = µa 7 7 T C ( C) Fig. - Power Dissipation vs. Case Temperature T J, Temperature ( C) Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature Fig. - Reverse Bias SOA T J = C; V GE = V 7 V GE = V V GE = V V GE = V V GE = V V GE =.V 7 V GE = V V GE = V V GE = V V GE = V V GE =.V 3 3 Fig. - Typ. IGBT Output Characteristics T J = - C; tp = 3µs Fig. - Typ. IGBT Output Characteristics T J = C; tp = 3µs 3 International Rectifier April, 3

4 I CE (A) I F (A) IRG7PH3UDMPbF 7 V GE = V V GE = V V GE = V V GE = V V GE =.V C C Fig. 7 - Typ. IGBT Output Characteristics T J = C; tp = 3µs V F (V) Fig. - Typ. Diode Forward Voltage Drop Characteristics 7 I CE = A I CE = A I CE = A I CE = A I CE = A I CE = A 3 3 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = - C Fig. - Typical V CE vs. V GE T J = C 7 I C, Collector-to-Emitter Current (A) 7 I CE = A I CE = A I CE = A 3 T J = C 3 T J = C 7 9 V GE (V) V GE, Gate-to-Emitter Voltage (V) Fig. - Typical V CE vs. V GE T J = C Fig. - Typ. Transfer Characteristics V CE = V; tp = 3µs International Rectifier April, 3

5 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRG7PH3UDMPbF t F E OFF td OFF 3 3 I C (A) I C (A) Fig. 3 - Typ. Energy Loss vs. I C T J = C; L = µh; V CE = V, R G = Ω; V GE = V Fig. - Typ. Switching Time vs. I C T J = C; L = µh; V CE = V, R G = Ω; V GE = V td OFF E OFF t F Fig. - Typ. Energy Loss vs. R G T J = C; L = µh; V CE = V, I CE = A; V GE = V 7 Rg (Ω) R G (Ω) Fig. - Typ. Switching Time vs. R G T J = C; L = µh; V CE = V, I CE = A; V GE = V Cies V CES = V V CES = V Coes Cres 3 Q G, Total Gate Charge (nc) Fig. 7 - Typ. Capacitance vs. V CE V GE = V; f = MHz Fig. - Typical Gate Charge vs. V GE I CE = A; L =.mh International Rectifier April, 3

6 IRG7PH3UDMPbF D =. Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R R R R 3 R 3 τ J τ J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig 9. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) R R τ τ τ C τ Ri ( C/W) τi (sec) Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R R R R R 3 R 3 τ J τ J τ τ τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t. Peak Tj = P dm x Zthjc + Tc. E- E-.... t, Rectangular Pulse Duration (sec) Fig.. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) R R τ τ τ C τ International Rectifier April, 3

7 IRG7PH3UDMPbF L L K DUT VCC V + - DUT VCC VCC Rg Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T. - RBSOA Circuit diode clamp / DUT L C force K D K -V Rg DUT / DRIVER VCC G force DUT.7µF C sense E sense E force Fig.C.T.3 - Switching Loss Circuit Fig.C.T. - BVCES Filter Circuit 7 tf 9% I CE 3 3 VCE (V) 3 ICE (A) % V CE % I CE - Eoff Loss -... time(µs) - Fig. WF - Typ. Turn-off Loss T J = C using Fig. CT International Rectifier April, 3

8 IRG7PH3UDMPbF TO-7AD Package Outline (Dimensions are shown in millimeters (inches)) E/ E A A A "A" Q E X D B L "A" L SEE VIEW "B" x b b e 3x b x Ø. B A c A LEAD TIP Ø P Ø. B A -A- S D THERMAL PAD VIEW: "B " PLATING BASE METAL E Ø. B A (c) VIEW: "A" - "A" (b, b, b) SE CT ION: C-C, D-D, E -E TO-7AD Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 7 ASSEMBLED ON WW 3, IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 3H 7 PART NUMBER DATE CODE YEAR = WEEK 3 LINE H TO-7AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier April, 3

9 IRG7PH3UDMPbF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D7F guidelines ) N/A TO-7AD (per JE DE C J-S TD-D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9, USA To contact International Rectifier, please visit International Rectifier April, 3