IGBT Designer s Manual

Transcription

1 IGBT Designer s Manual Data Sheets The IGBT devices listed in this Designer s Manual represent International Rectifier s IGBT line as of August, 994. The data presented in this manual supersedes all previous specifications. -2

2 INSULATED GATE BIPOLAR TRANSISTOR PD A IRGB2S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation ( to 4 Hz) See Fig. for urrent vs. Frequency curve G V ES = 6V V E(sat) 2.4V E GE = 5V, I = A Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. Absolute Maximum Ratings TO-22AB Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 9 T = ontinuous ollector urrent A I M Pulsed ollector urrent 76 I LM lamped Inductive Load urrent 38 V GE Gate-to-Emitter Voltage ±2 V E ARV Reverse Voltage Avalanche Energy 5. mj P T = 25 Maximum Power Dissipation 6 W P T = Maximum Power Dissipation 24 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase 2. R θs ase-to-sink, flat, greased surface.5 /W R θja Junction-to-Ambient, typical socket mount 8 Wt Weight 2. (.7) g (oz) -3 Revision

3 IRGB2S Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µA V (BR)ES Emitter-to-ollector Breakdown Voltage 2 V V GE = V, I =.A V (BR)ES/ T J Temperature oeff. of Breakdown Voltage.75 V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage I = A V GE = 5V 2.4 V I = 9A See Fig. 2, 5.9 I = A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temperature oeff. of Threshold Voltage - mv/ V E = V GE, I = 25µA g fe Forward Transconductance S V E = V, I = A I ES Zero Gate Voltage ollector urrent 25 µa V GE = V, V E = 6V V GE = V, V E = 6V, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 6 26 I = A Q ge Gate - Emitter harge (turn-on) n V = 4V See Fig. 8 Q gc Gate - ollector harge (turn-on) 7. 2 V GE = 5V t d(on) Turn-On Delay Time 24 T J = 25 t r Rise Time 23 ns I = A, V = 48V t d(off) Turn-Off Delay Time 82 2 V GE = 5V, R G = 5Ω t f Fall Time 9 6 Energy losses include "tail" E on Turn-On Switching Loss.24 E off Turn-Off Switching Loss 3.9 mj See Fig. 9,,, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 26 T J = 5, t r Rise Time 3 ns I = A, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5Ω t f Fall Time 8 Energy losses include "tail" E ts Total Switching Loss 7. mj See Fig., 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package ies Input apacitance 36 V GE = V oes Output apacitance 36 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 5.2 ƒ =.MHz Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V =8%(V ES ), V GE =2V, L=µH, R G = 5Ω, ( See fig. 3a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -4

4 IRGB2S LO AD U R RE NT (A) Square wave: 6% of rated voltage For both: Duty cycle: 5% T J = 25 T s in k = 9 Gate drive as specified Power Dissipation = 3W Triangular w ave: lamp voltage: 8% of rated 5 Id e a l d io d e s. f, F re quency (kh z) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, o lle ctor-to-em itter urre nt (A) T J = 25 T J = 5 V G E = 5 V 2 µs P UL S E W ID TH V E, ollector-to-em itter V oltage (V) I, ollecto r-to -Em itter u rrent (A) T J = 5 T J = 25 V = V 5 µs P UL S E W IDTH V G E, G ate -to-e m itter V olta ge (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -5

5 IRGB2S M aximum D ollector urrent (A ) V G E = 5 V V E, ollector-to-em itter Voltage (V) V G E = 5 V 8 µs P UL S E W ID TH I = 2 A I = A I = 5.A T, ase Tem perature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Tem perature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature T he rm al R e sp ons e (Z thj ). D = S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 2. P ea k T J = P D M x Z thj + T t, R e c ta n gu la r P u ls e D ura tio n (s e c ) N otes:. D uty fac tor D = t / t 2 P D M t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase -6

6 IRGB2S, apacitance (pf) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V, G ate-to-e m itter V oltag e (V ) G E V E = 48 V I = A V E, ollector-to-em itter V oltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q g, T o tal G a te h a rg e (n ) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage V = 48 V V G E = 5 V T = 25 I = A T o tal S w itc hing Los se s (m J) R G = 5 Ω V GE = 5 V V = 4 8 V I = 2 A I = A I = 5. A R G, Gate R esistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance W T, ase Tem perature ( ) Fig. - Typical Switching Losses vs. ase Temperature -7

7 IRGB2S Total Sw itching Losses (m J) R G = 5 Ω T = 5 V = 4 8 V V G E = 5 V I, ollector-to-em itter urrent (A ) V G EE= 2 V T = 2 5 J S A FE O P E RA TIN G A RE A I, ollecto r-to-e m itter urrent (A ) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V, ollecto r-to-e m itter V oltage (V ) E Fig. 2 - Turn-Off SOA Refer to Section D for the following: Appendix : Section D - page D-5 Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit Fig. 4a - Switching Loss Test ircuit Fig. 4b - Switching Loss Waveform Package Outline - JEDE Outline TO-22AB Section D - page D-2-8

8 Note: For the most current drawings please refer to the IR website at: