Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

Transcription

1 VS-4MT2UHAPbF Half Bridge IGBT MTP (Ultrafast NPT IGBT), 8 A MTP PRIMARY CHARACTERISTICS V CES 2 V V CE(on) typical at V GE = 5 V 3.36 V I C at T C = 25 C 8 A Speed 8 khz to 3 khz Package MTP Circuit configuration Half bridge FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient Available μs short circuit capability Available Square RBSOA HEXFRED antiparallel diodes with ultrasoft reverse recovery and low V F Al 2 O 3 DBC Very low stray inductance design for high speed operation UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details BENEFITS Optimized for welding, UPS and SMPS applications Rugged with ultrafast performance Benchmark efficiency above 2 khz Outstanding ZVS and hard switching operation Low EMI, requires less snubbing Excellent current sharing in parallel operation Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V CES 2 V T C = 25 C 8 Continuous collector current I C T C = 4 C 4 Pulsed collector current I CM 6 Clamped inductive load current I LM 6 A Diode continuous forward current I F T C = 5 C 2 Diode maximum forward current I FM 6 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = min 25 V T C = 25 C 463 Maximum power dissipation (only IGBT) P D T C = C 85 W Revision: 9-Oct-7 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-4MT2UHAPbF ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 25 μa V Temperature coefficient of breakdown voltage V (BR)CES / T J V GE = V, I C = 3 ma (25 C to 25 C) V/ C V GE = 5 V, I C = 4 A Collector to emitter saturation voltage V CE(on) V GE = 5 V, I C = 8 A V GE = 5 V, I C = 4 A, T J = 5 C V V GE = 5 V, I C = 8 A, T J = 5 C Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa 4-6 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) mv/ C Transconductance g fe V CE = 5 V, I C = 4 A, PW = 8 μs S Zero gate voltage collector current I CES V GE = V, V CE = 2 V, T J = 25 C -.4. V GE = V, V CE = 2 V, T J = 5 C -.2 ma V GE = V, V CE = 2 V, T J = 25 C μa Gate to emitter leakage current I GES V GE = ± 2 V - - ± 25 na SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g IC = 4 A Gate to emitter charge (turn-on) Q ge V CC = 6 V nc Gate to collector charge (turn-on) Q gc V GE = 5 V Turn-on switching loss E on V CC = 6 V, I C = 4 A, V GE = 5 V, Turn-off switching loss E off R = 5, L = 2 μh, T = 25 C, g J energy losses include tail and diode Total switching loss E tot reverse recovery Turn-on switching loss E on V CC = 6 V, I C = 4 A, V GE = 5 V, mj Turn-off switching loss E off R g = 5, L = 2 μh, T J = 25 C, energy losses include tail and diode Total switching loss E tot reverse recovery Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f =. MHz Reverse bias safe operating area Short circuit safe operating area RBSOA SCSOA T J = 5 C, I C = 6 A V CC = V, V p = 2 V R g = 5, V GE = + 5 V to V T J = 5 C, V CC = 9 V, V p = 2 V R g = 5, V GE = + 5 V to V Fullsquare - - μs DIODE SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I C = 4 A I C = 8 A Diode forward voltage drop V FM I C = 4 A, T J = 25 C V I C = 8 A, T J = 25 C I C = 4 A, T J = 5 C Reverse recovery energy of the diode E rec VGE = 5 V, R g = 5, L = 2 μh μj Diode reverse recovery time t rr V CC = 6 V, I C = 4 A ns Peak reverse recovery current I rr T J = 25 C A Revision: 9-Oct-7 2 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 P D (W) I C (A) I C (A) I C (A) VS-4MT2UHAPbF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction temperature range T J -4-5 C Storage temperature range T Stg Junction to case IGBT R thjc Diode Case to sink per module R thcs Heatsink compound thermal conductivity = W/mK Clearance () External shortest distance in air between 2 terminals Creepage (2) Shortest distance along external surface of the insulating material between 2 terminals Mounting torque to heatsink A mounting compound is recommended and the torque should be checked after 3 hours to allow for 3 ± % Nm the spread of the compound. Lubricated threads. Weight 66 g C/W mm 8 6 μs 4 μs ms 2. DC T C ( C). Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Forward SOA T C = 25 C; T J 5 C T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 4 - Reverse BIAS SOA T J = 5 C; V GE = 5 V Revision: 9-Oct-7 3 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 I CE (A) I CE (A) I CE (A) I F (A) VS-4MT2UHAPbF V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V C 25 C 25 C V F (V) Fig. 5 - Typical IGBT Output Characteristics T J = - 4 C; t p = 8 μs Fig. 8 - Typical Diode Forward Characteristics t p = 8 μs V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V I CE = 8A I CE = 4A I CE = 2A V GE (V) Fig. 6 - Typical IGBT Output Characteristics T J = 25 C; t p = 8 μs Fig. 9 - Typical V CE vs. V GE T J = -4 C V GE = 8V VGE = 5V VGE = 2V VGE = V VGE = 8.V I CE = 8A I CE = 4A I CE = 2A V GE (V) Fig. 7 - Typical IGBT Output Characteristics T J = 25 C; t p = 8 μs Fig. - Typical V CE vs. V GE T J = 25 C Revision: 9-Oct-7 4 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 I CE (A) Swiching Time (ns) Energy (μj) Swiching Time (ns) VS-4MT2UHAPbF I CE = 8A I CE = 4A I CE = 2A td OFF 2 8 t R 6 4 td ON V GE (V) t F I C (A) Fig. - Typical V CE vs. V GE T J = 25 C Fig. 4 - Typical Switching Time vs. I C T J = 25 C; L = 25 μh; V CE = 4 V R g = 5 ; V GE = 5 V T J = 25 C T J = 25 C 5 E ON E OFF V GE (V) Fig. 2 - Typical Transfer Characteristics V CE = 5 V; t p = μs R g (Ω) Fig. 5 - Typical Energy Loss vs. R g T J = 5 C; L = 25 μh; V CE = 6 V I CE = 4 A; V GE = 5 V td OFF 24 Energy (μj) 8 2 E ON td ON t R t F 6 E OFF I C (A) Fig. 3 - Typical Energy Loss vs. I C T J = 25 C; L = 25 μh; V CE = 4 V R g = 5 ; V GE = 5 V R g (Ω) Fig. 6 - Typical Switching Time vs. R g T J = 5 C; L = 25 μh; V CE = 6 V I CE = 4 A; V GE = 5 V Revision: 9-Oct-7 5 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 I rr (A) V GE (V) I rr (A) Capacitance (pf) I rr (A) Q rr (μc) VS-4MT2UHAPbF 5 R g = 5.Ω A 4 R g = Ω A 3 2 R g = 3 Ω R g = 5 Ω Ω 3Ω Ω 5.Ω 2A I F (A) di F /dt (A/μs) Fig. 7 - Typical Diode I rr vs. I F T J = 25 C Fig. 2 - Typical Diode Q rr vs. di F /dt V CC = 6 V; V GE = 5 V; T J = 25 C 5 Cies 4 3 Coes 2 Cres R g (Ω) Fig. 8 - Typical Diode I rr vs. R g T J = 25 C; I F = 4 A Fig. 2 - Typical Capacitance vs. V CE V GE = V; f = MHz V di F /dt (A/μs) Fig. 9 - Typical Diode I rr vs. di F /dt V CC = 6 V; V GE = 5 V; I CE = 4 A; T J = 25 C Q G, Total Gate Charge (nc) Fig Typical Gate Charge vs. V GE I CE = 5. A; L = 6 μh Revision: 9-Oct-7 6 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-4MT2UHAPbF Thermal Response ( Z thjc )... D = τ τ R R 2 R 3 R R2 R3 τ J τ J τ 3 τ 2 τ 2 τ 3 Ci= τi/ri Ci= i/ri τ C τ Ri ( C/W) τi (sec) Notes: SINGLE PULSE. Duty Factor D = t/t2 ( THERMAL RESPONSE) ) 2. Peak Tj = P dm x Zthjc + Tc E-5 E-6 E t, Rectangular Pulse Duration (sec) Fig Maximum Transient Thermal Impedance, Junction to Case (IGBT) D = R R 2 R R2 τ J τ J τ τ τ 2 τ 2 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5... t, Rectangular Pulse Duration (sec) Fig Maximum Transient Thermal Impedance, Junction to Case (Diode) 3, 4 2 5, 6 9 7, 8 Fig Electrical diagram Revision: 9-Oct-7 7 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS-4MT2UHAPbF L Driver K D.U.T. + - V CC D C D.U.T V Fig. CT. - Gate Charge Circuit (Turn-Off) Fig. CT.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. L V + - R g D.U.T. V - 5 V D.U.T./ driver + - V CC R g Fig. CT.2 - RBSOA Circuit Fig. CT.4 - Switching Loss Circuit ORDERING INFORMATION TABLE Device code VS- 4 MT 2 U H A PbF product 2 - Current rating (4 = 4 A) 3 - Essential part number 4 - Voltage code (2 = 2 V) 5 - Speed / type (U = ultrafast IGBT) 6 - Circuit configuration (H = half bridge) 7 - A = Al 2 O 3 DBC substrate 8 - PbF = lead (Pb)-free Revision: 9-Oct-7 8 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 VS-4MT2UHAPbF CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: 9-Oct-7 9 Document Number: 9457 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 Outline Dimensions MTP DIMENSIONS in millimeters 2 ± ±.3 2 ±.3 Ø. ± z detail ±. 45 ± ±.5 6 ±.3 Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used.8 Ra ± ± ± ± Ø 2. (x 4) R 2.6 (x 2) Dia. 5 (x 4) 27.5 ±.3 Pins position with tolerance Note Unused terminals are not assembled in the package Revision: -Jul-5 Document Number: 9575 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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