IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF
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1 IR IGBT IRGB462DPbF IRGIB462DPbF IRGP462D(-E)PbF IRGS462DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V CES = 6V I C = 2A, T C =1 C C C C t SC 5µs, T J(max) = 175 C V CE(ON) typ. = IC = 12A C E G IRGB462DPbF TO-22AB G C E IRGP462DPbF TO-247AC C E G IRGP462D-EPbF TO-247AD Applications Industrial Motor Drive Inverters UPS Welding G C E n-channel E C G IRGIB462DPbF TO-22AB Full-Pak C C E G IRGS462DPbF D 2 Pak G C E Gate Collector Emitter Features Low V CE(ON) and switching losses Square RBSOA and maximum junction temperature 175 C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Excellent current sharing in parallel operation Positive V CE (ON) temperature coefficient 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGB462DPbF TO-22AB Tube 5 IRGB462DPbF IRGIB462DPbF TO-22AB Full-Pak Tube 5 IRGIB462DPbF IRGP462DPbF TO-247AC Tube IRGP462DPbF IRGP462D-EPbF TO-247AD Tube IRGP462D-EPbF Tube 5 IRGS462DPbF IRGS462DPbF D 2 Pak Tape and Reel Right 8 IRGS462DTRRPbF Tape and Reel Left 8 IRGS462DTRLPbF
2 IRGB/IB/P/SP462D/EPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = C Continuous Collector Current 32 I T C = 1 C Continuous Collector Current 2 I CM Pulse Collector Current, V GE = 15V 36 A I LM Clamped Inductive Load Current, V GE = 2V 48 I T C = C Diode Continuous Forward Current 16 I T C = 1 C Diode Continuous Forward Current 1 I FM Diode Maximum Forward Current 48 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate to Emitter Voltage ±3 P T C = C Maximum Power Dissipation 14 P T C = 1 C Maximum Power Dissipation 7 W T J Operating Junction and -4 to +175 T STG Storage Temperature Range Soldering Temperature, for 1 sec. (1.6mm from case) 3 C Mounting Torque, 6-32 or M3 Screw (TO-22, TO-247) 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (D 2 Pak, TO-22) 1.7 R θjc (IGBT) Thermal Resistance Junction-to-Case (TO-22 Full-Pak) 3.75 Thermal Resistance Junction-to-Case (TO-247) 1.12 Thermal Resistance Junction-to-Case (D 2 Pak, TO-22) 3.66 R θjc (Diode) Thermal Resistance Junction-to-Case (TO-22 Full-Pak) 6.22 Thermal Resistance Junction-to-Case (TO-247) 3.71 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface-to-22, D 2 Pak, C/W.5 TO-22 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247).24 R θja Thermal Resistance, Junction-to-Ambient (PCB Mount - D 2 Pak) 4 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-247) 4 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-22) 62 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-22 Full-Pak) 65 Electrical T J = C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 1µA ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.4 V/ C V GE = V, I C = 1mA ( C-175 C) I C = 12A, V GE = 15V, T J = C V CE(on) Collector-to-Emitter Saturation Voltage 1.9 V I C = 12A, V GE = 15V, T J = 15 C 1.97 I C = 12A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 35µA ΔV GE(th) /ΔT J Threshold Voltage Temp. Coefficient -18 mv/ C V CE = V GE, I C = 1.mA ( C-175 C) gfe Forward Transconductance 7.7 S V CE = 5V, I C = 12A, PW = 8µs I CES Collector-to-Emitter Leakage Current 2. µa V GE = V, V CE = 6V 475 V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V V FM Diode Forward Voltage Drop V I F = 12A 1.6 I F = 12A, T J = 175 C
3 IRGB/IB/P/SP462D/EPbF Switching T J = C (unless otherwise specified) Parameter Min. Typ. Max Units Conditions Q g Total Gate Charge I C = 12A Q ge Gate-to-Emitter Charge 7. nc V GE = 15V Q gc Gate-to-Collector Charge 11 V CC = 4V E on Turn-On Switching Loss 75 I µj C = 12A, V CC = 4V, V GE =15V E off Turn-Off Switching Loss 2 E R G = 22Ω, L = 2µH, L S total Total Switching Loss 3 = 15nH, t d(on) Turn-On delay time 31 T J = C t r Rise time 17 t d(off) Turn-Off delay time 83 t f Fall time 24 E on Turn-On Switching Loss 185 E off Turn-Off Switching Loss 355 E total Total Switching Loss 54 t d(on) Turn-On delay time 3 t r Rise time 18 t d(off) Turn-Off delay time 12 t f Fall time 41 ns µj ns Energy losses include tail & diode reverse recovery I C = 12A, V CC = 4V, V GE =15V R G = 22Ω, L = 2µH, L S = 15nH, T J = 175 C Energy losses include tail & diode reverse recovery C ies Input Capacitance 765 V GE = V C oes Output Capacitance 52 pf V CC = 3V C res Reverse Transfer Capacitance 23 f = 1.MHz T J = 175 C, I C = 48A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp 6V R G = 22Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 5. µs V CC = 4V, Vp 6V R G = 22Ω, V GE = +15V to V Erec Reverse Recovery Energy of the Diode 28 µj T J = 175 C t rr Diode Reverse Recovery Time 68 ns V CC = 4V, I F = 12A, V GE = 15V, I rr Peak Reverse Recovery Current 19 A Rg = 22Ω, L = 2µH, L S = 15nH Notes: Limited by maximum junction temperature. Not applicable for Full-Pak package:current value limited by R θ JC. R θ is measured at T J of approximately 9 C. Refer to AN-186 for guidelines for measuring V (BR)CES safely. Pulse width limited by maximum junction temperature. Values influenced by parasitic L and C in measurement. When mounted on 1 square PCB (FR-4 or G-1 Material). For recommended footprint and soldering techniques refer to application note #AN V CC = 8% (V CES ), V GE = 2V, L = 1µH, R G = 22Ω
4 I CE (A) I CE (A) I C (A) I C (A) I C (A) P tot (W) IRGB/IB/P/SP462D/EPbF T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1µsec 1 1µsec 1msec 1 1 DC.1 45 Tc = C Tj = 175 C Single Pulse Fig. 3 - Forward SOA T C = C; T J 175 C; V GE = 15V Fig. 4 - Reverse Bias SOA T J = 175 C; VGE = 2V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V Fig. 5 - Typ. IGBT Output Characteristics TJ = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics TJ = C; tp = 8µs
5 I CE (A) I CE (A) I F (A) IRGB/IB/P/SP462D/EPbF V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V c C 175 C Fig. 7 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8µs V F (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics I CE = 6.A I CE = 12A I CE = 24A I CE = 6.A I CE = 12A I CE = 24A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = C T J = C T J = 175 C I CE = 6.A I CE = 12A I CE = 24A V GE (V) V GE (V) Fig Typical V CE vs. V GE T J = 175 C Fig Typ. Transfer Characteristics V CE = 5V; tp = 1µs
6 I RR (A) I RR (A) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRGB/IB/P/SP462D/EPbF td OFF 5 E OFF 1 t F E ON 1 td ON t R I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 22Ω; V GE = 15V 5 Fig Typ. Switching Time vs. I C T J = 175 C; L = 2µH; V CE = 4V, R G = 22Ω; V GE = 15V E OFF 3 E ON 1 td OFF 2 t F td ON t R Rg ( Ω) R G (Ω) Fig Typ. Energy Loss vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 12A; V GE = 15V Fig Typ. Switching Time vs. R G T J = 175 C; L = 2µH; V CE = 4V, I CE = 12A; V GE = 15V 2 R G = 1Ω R G = 22Ω R G = 47Ω 15 5 R G = 1Ω I F (A) R G (Ω) Fig Typ. Diode I RR vs. I F T J = 175 C Fig Typ. Diode I RR vs. R G T J = 175 C
7 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Time (µs) I RR (A) Q RR (µc) IRGB/IB/P/SP462D/EPbF Ω 24A 22Ω 1Ω Ω 12A 6.A di F /dt (A/µs) di F /dt (A/µs) Fig Typ. Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 12A; T J = 175 C Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 4V; V GE = 15V; T J = 175 C R G = 1Ω R G = 22Ω R G = 47Ω R G = 1Ω Current (A) I F (A) V GE (V) Fig Typ. Diode E RR vs. I F T J = 175 C Fig V GE vs. Short Circuit Time V CC = 4V; T C = C Cies V CES = 3V V CES = 4V Coes 4 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 12A; L = 6µH
8 IRGB/IB/P/SP462D/EPbF 1 1 D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R 1 R 2 R 3 R 1 R 2 R 3 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig. - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-22Pak) τ C τ C Ri ( C/W) τi (sec) Thermal Response ( Z thjc ) 1.1 D = R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3.1 Ci= τi/ri SINGLE PULSE Ci= τi/ri ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) τ C τ C Ri ( C/W) τi (sec) Fig Maximum Transient Thermal Impedance, Junction-to-Case (DIODE-TO-22Pak)
9 IRGB/IB/P/SP462D/EPbF L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT 4X L DC VCC -5V DUT Rg DUT / DRIVER VCC R SH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R = VCC ICM 1K Rg DUT VCC G force D1 DUT 22K.75µF C sense E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
10 IRGB/IB/P/SP462D/EPbF tf 9% I CE 15 1 I CE (A) 3 2 tr 9% test TEST 3 2 I CE (A) 5% I CE 1 5% V CE E OFF Loss Time(µs) % test current 5% V CE E ON Time (µs) Fig. WF1 - Typ. Turn-off Loss T J = 175 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss T J = 175 C using Fig. CT Q RR t RR 3 V CE 15 IRR(A) Peak I RR 1% Peak I RR VCE (V) 2 1 I CE 1 5 ICE (A) time (µs) time (µs) Fig. WF3 - Typ. Diode Recovery T J = 175 C using Fig. CT.4 Fig. WF4 - Typ. S.C. T J = 15 C using Fig. CT
11 IRGB/IB/P/SP462D/EPbF TO-22AB Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information EXAM PLE: TH IS IS AN IRF11 L O T C O D E ASSEM BLED O N W W 19, 2 IN TH E ASSEM BLY LIN E "C" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead - Free" IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E P A R T N U M B E R D A T E C O D E YEAR = 2 W E E K 1 9 LIN E C TO-22AB package is not recommended for Surface Mount Application
12 IRGB/IB/P/SP462D/EPbF TO-22AB Full Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-22AB Full Pak Part Marking Information TO-22AB Full-Pak package is not recommended for Surface Mount Application
13 IRGB/IB/P/SP462D/EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 2/26/21 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application
14 IRGB/IB/P/SP462D/EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAM PLE: THIS IS AN IRGP3B12KD-E WITH ASSEMBLY LO T CODE 5657 ASSEM BLED ON WW 35, 2 IN THE ASSEM BLY LINE "H" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead-Free" PART NUMBER IN TE R N A TIO N A L RECTIFIER LOGO 35H DATE CODE ASSEM BLY YEAR = 2 LOT CODE WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application
15 IRGB/IB/P/SP462D/EPbF D 2 -PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 -Pak (TO-263AB) Part Marking Information THIS IS AN IRF53S WITH LOT CODE 824 ASSEMBLED ON WW 2, 2 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F53S PART NUMBER DATE CODE YEAR = 2 WEEK 2 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F53S PART NUMBER DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR = 2 WEEK 2 A = ASSEMBLY SITE CODE
16 IRGB/IB/P/SP462D/EPbF D 2 Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1. (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX
17 IRGB/IB/P/SP462D/EPbF Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant TO-22AB TO-22AB-Full-Pak TO-247AC TO-247AD D 2 Pak Industrial (per JEDEC JESD47F) Yes N/A MSL1 Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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