Absolute Maximum Ratings

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1 IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy TO-22 is available in PbF as a Lead-Free Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. Absolute Maximum Ratings TERMINAL DIAGRAM Gate R1 JEDEC TO-263AB R2 Collector Emitter JEDEC TO-262AA BV CES = 37V min, 3V max I T C = 11 C = 1A V CE(on) C I L(min) C,L=.7mH JEDEC TO-22AB NOTE: is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, TRR or TRL. Parameter Max Unit Condition V CES Collector-to-Emitter Voltage Clamped V R G = 1K ohm I T C = 25 C Continuous Collector Current 2 A V GE = 5V I T C = 11 C Continuous Collector Current 1 A V GE = 5V I G Continuous Gate Current 1 ma I Gp Peak Gate Current 1 ma t PK = 1ms, f = 1Hz V GE Gate-to-Emitter Voltage Clamped V P T C = 25 C Maximum Power Dissipation 125 W P T = 11 C Maximum Power Dissipation 5 W T J Operating Junction and - to 175 C T STG Storage Temperature Range - to 175 C V ESD Electrostatic Voltage 6 KV C = 1pF, R = 1.5K ohm I L Self-clamped Inductive Switching Current 11.5 A L =.7mH, T = 25 C PD Thermal Resistance Parameter Min Typ Max Unit RθJC Thermal Resistance, Junction-to-Case 1.2 RθJA Thermal Resistance, Junction-to-Ambient C/W (PCB Mounted, Steady State) ZθJC Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1

2 Off-State Electrical T J = 25 C (unless otherwise specified) Parameter Min Typ Max Unit Conditions Fig BV CES Collector-to-Emitter Breakdown Voltage 37 3 V R G = 1K ohm, I C=7A, V GE = V BV GES Gate-to-Emitter Breakdown Voltage 1 12 V I G=2m A I CES Collector-to-Emitter Leakage Current 15 µa R G=1K ohm, V CE = 25V 1 µa R G=1K ohm, V CE = 25V, T J =15 C BV CER Emitter-to-Collector Breakdown Voltage 2 28 V I C = -1m A R 1 Gate Series Resistance 75 ohm R 2 Gate-to-Emitter Resistance K ohm On-State Electrical T J = 25 C (unless otherwise specified) Parameter Min Typ Max Unit Conditions Fig I C = 7A, V GE =.5V V CE(on) Collector-to-Emitter Saturation V I C = 1A, V GE =.5V 1 Voltage I C = 1A, V GE =.5V, T C= - o C I C = 1A, V GE = 5.V, T C= - o C I C = 1A, V GE = 5.V I C = 1A, V GE = 5.V, T C=15 o C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 1 m A, T C=25 o C 3, V CE = V GE, I C = 1 m A, T C=15 o C 8 g fs Transconductance S V CE = 25V, I C = 1A, T C=25 o C I C Collector Current 2 A V CE = 1V, V GE =.5V Switching T J = 25 C (unless otherwise specified) Parameter Min Typ Max Unit Conditions Fig Q g Total Gate charge 27 I C = 1A, V CE=12V, V GE=5V 7 Q ge Gate - Emitter Charge 2.5 nc I C = 1A, V CE=12V, V GE=5V 15 Q gc Gate - Collector Charge 1 I C = 1A, V CE=12V, V GE=5V t d(on) Turn - on delay time V GE=5V, R G=1K ohm, L=1mH, V CE=1V 12 t r Rise time µs V GE=5V, R G=1K ohm, L=1mH, V CE=1V 1 t d(off) Turn - off delay time V GE=5V, R G=1K ohm, L=1mH, V CE=3V C ies Input Capacitance V GE=V, V CE=25V, f=1m H z C oes Output Capacitance 1 15 pf V GE=V, V CE=25V, f=1m H z 6 C res Reverse Transfer Capacitance V GE=V, V CE=25V, f=1m H z 25 L=.7m H, T C=25 C I L Self-Clamped 15.5 A L=2.2m H, T C=25 C 9 Inductive Switching Current 11.5 L=.7m H, T C=25 C L=1.5m H, T C=15 C L=.7m H, T C=15 C 1 6 L=8.7m H, T C=15 C T J =15 o C, t SC Short Circuit Withstand Time 12 µs V CC = 16V, L = 1µH 1 R G = 1K ohm, V GE = 5V Page 2

3 6 5 Fig.1 - Typ. Output Characteristics T J =25 C V GE = 1 V V GE = 5.V V GE =.5V V GE =.V V GE = 3.7V 6 5 Fig.2 - Typ. Output Characteristics T J =125 C V GE = 1 V V GE = 5.V V GE =.5V V GE =.V V GE = 3.7V I C ( A ) 3 I C ( A ) V CE (V) V CE (V) 1 Fig.3 - Transfer Characteristics V CE =2V; tp=2µs 1.6 Fig. - Typical V CE vs T J V GE=.5V 9 8 T J = 25 C T J = 125 C I C = 1A I C E ( A ) 6 5 V C E ( V ) I C = 7A V GE (V) T J ( C) Page 3

4 2.2 Fig.5 - Typical V GE(th) vs T J I C=1mA 1 Fig.6 - Typ. Capacitance vs V CE V GE =V; V CE =25V; f=1mhz 2. C ies V G E ( t h ) ( V ) C a p a c i t a n c e ( p F ) 1 1 C oes 1.2 C res T J ( C) V CE (V) Fig.7 - Typ. Gate Charge vs V GE I C =1A; V CE =12V; V GE =5V Fig.8 - Typical V CE vs V GE V G E ( V ) V C E ( V ) I C= 7A; 125 C I C = 7A; 25 C I C =1A; 125 C I C=1A; 25 C Q G, Total Gate Charge (nc) V GE (V) Page

5 Fig.9 - Self-clamp Avalance Current vs 25 C 2 Fig.1 - Self-clamp Avalance Current vs 15 C O p e n - s e c o n d a r y C u r r e n t ( A ) Minimum Typical O p e n - s e c o n d a r y C u r r e n t ( A ) Minimum Typical Inductance (mh) Inductance (mh) Fig.11 - Transient Thermal Impedance, Junction-to-Case 1 Thermal Response(Z thjc ) 1 D = PDM.1.5 t1 t SINGLE PULSE Notes: (THERMAL RESPONSE) 1. Duty factor D = t 1/ t 2 2. Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) Page 5

6 Fig.12 - Switching Waveform for Time Measurement V GE = 5V; R G = 1KΩ; L= 1mH; V CE = 1V; used circuit in Fig.1 V c l a m p ( V ) V Clamp V cl (measured) V GE t d (o f f ) t r t (µs) V G E ( V ) Fig.13 - Self-clamped Inductive Switching Waveform L=.7mH; T C =25 C; used circuit in Fig I CE V clamp I C E ( A ) V c l a m p ( V ) E-5-1.E-5.E+ 1.E-5 2.E-5 3.E-5.E-5 5.E-5 6.E-5 time Page 6

7 Fig.1 - Test Circuit.7 Ω L 1KΩ D.U.T. Ice Fig.15 - Gate Charge Circuit 1K DUT L VCC Page 7

8 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) Ignition IGBT D 2 Pak Part Marking Information (Lead-Free) THIS IS AN IRF53S WITH L OT CODE 82 AS S E MBLE D ON WW 2, 2 IN THE ASSEMBLY LINE "L" Note: "P" in as s embly line pos ition indicates "Lead-Free" OR INTERNATIONAL R ECT IF IER LOGO ASSEMBLY LOT CODE F 53S PART NUMBER DAT E CODE YEAR = 2 WEE K 2 LINE L INTERNATIONAL RE CT IF IE R LOGO ASSEMBLY LOT CODE F53S PART NUMBER DAT E CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR = 2 WEEK 2 A = ASSEMBLY SITE CODE Page 8

9 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL313L LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" OR INT E RNAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE PART NUMBER DATE CODE YE AR 7 = 1997 WEEK 19 LINE C INT E RNAT IONAL RE CT IF IER LOGO AS S E MB L Y LOT CODE PART NUMBER DATE CODE P = DE S IGNAT E S L E AD-F R E E PRODUCT (OPTIONAL) YE AR 7 = 1997 WEEK 19 A = AS S E MB LY S IT E CODE Page 9

10 TO-22AB Package Outline Dimensions are shown in millimeters (inches) Ignition IGBT 2.87 (.113) 2.62 (.13) 1.5 (.15) 1.29 (.5) 3.78 (.19) 3.5 (.139) - A -.69 (.185).2 (.165) - B (.52) 1.22 (.8) 15.2 (.6) 1.8 (.58) 1.9 (.555) 13.7 (.53) (.255) 6.1 (.2) 1.15 (.5) MIN.6 (.16) 3.55 (.1) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE - DRAIN 3- EMITTER - DRAIN - COLLECTOR 3X 1. (.55) 1.15 (.5) 2.5 (.1) 2X NOTES: 3X.93 (.37).69 (.27).36 (.1) M B A M 3X 2.92 (.115) 2.6 (.1).55 (.22).6 (.18) 1 DIMENSIONING & TOLERANCING PER ANSI Y1.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-22AB. 2 CONTROLLING DIMENSION : INCH HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-22AB Part Marking Information EXAMPLE: T HIS IS AN IRF11 LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Page 1

11 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) Ignition IGBT TRR 1.6 (.63) 1.5 (.59).1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.15).32 (.135) FEED DIRECTION 1.85 (.73) 1.65 (.65) 11.6 (.57) 11. (.9) 15.2 (.69) (.61) 2.3 (.957) 23.9 (.91) TRL 1.9 (.29) 1.7 (.21) 16.1 (.63) 15.9 (.626) 1.75 (.69) 1.25 (.9).72 (.136).52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.5) 27. (1.79) 23.9 (.91) 33. (1.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB.. INCLUDES FLANGE OUTER EDGE. 26. (1.39) 2. (.961) 3 3. (1.197) MAX. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 925, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 9/ Page 11

12 Note: For the most current drawings please refer to the IR website at:

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