SMPS MOSFET. V DSS R DS(on) max (mω)

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1 P A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits S S S G A HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 30V 8.5@V GS = V GS = 4.5V A SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V T A = 25 C Continuous rain Current, V V 4 T A = 70 C Continuous rain Current, V V A I M Pulsed rain Current A = 25 C Maximum Power issipation 2.5 W A = 70 C Maximum Power issipation.6 W Linear erating Factor 0.02 mw/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θja Junction-to-Ambient 50 C/W Notes through are on page 8 6/26/0

2 IRF7477 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µA V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = ma V GS = V, I = 4A ƒ R S(on) Static rain-to-source On-Resistance mω 7.7 V GS = 4.5V, I = A ƒ V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA 20 V µa S = 24V, V GS = 0V I SS rain-to-source Leakage Current 0 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 6V na Gate-to-Source Reverse Leakage -200 V GS = -6V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 35 S V S = 5V, I = A Q g Total Gate Charge I = A Q gs Gate-to-Source Charge 6.5 nc V S = 5V Q gd Gate-to-rain ("Miller") Charge 8.2 V GS = 4.5V Q oss Output Gate Charge 30 V GS = 0V, V S = 5V t d(on) Turn-On elay Time 2 V = 5V t r Rise Time 9.8 I ns = A t d(off) Turn-Off elay Time 9 R G =.8Ω t f Fall Time 5.9 V GS = 4.5V ƒ C iss Input Capacitance 27 V GS = 0V C oss Output Capacitance 20 V S = 5V C rss Reverse Transfer Capacitance 0 pf ƒ =.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 500 mj I AR Avalanche Current 8.2 A iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.3 (Body iode) showing the A G I SM Pulsed Source Current integral reverse (Body iode) p-n junction diode V T J = 25 C, I S = A, V GS = 0V ƒ V S iode Forward Voltage 0.65 T J = 25 C, I S = A, V GS = 0V ƒ t rr Reverse Recovery Time 9 40 ns T J = 25 C, I F = A, V R =5V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = A, V R =5V Q rr Reverse Recovery Charge 40 2 nc di/dt = 0A/µs ƒ 2 S

3 IRF7477 I, rain-to-source Current (A) 00 0 VGS TOP V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 2.7V I, rain-to-source Current (A) 00 0 VGS TOP V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 2.7V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current (A) 00 0 T J = 25 C T J = 50 C V S= 50V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = 4A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I, rain-to-source Current (A) C, Capacitance(pF) IRF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss V GS, Gate-to-Source Voltage (V) I = A V S = 24V V S = 5V 0 V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S (on) I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) 0 0µsec msec Tc = 25 C Tj = 50 C msec Single Pulse V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 Fig 6. On-Resistance Vs. rain Current IRF V S R I, rain Current (A) T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Ambient Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f + - V Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) = t 0. SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thja + TA t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R S (on), rain-to-source On Resistance ( Ω) IRF R S(on), rain-to -Source On Resistance ( Ω) V GS = 4.5V I = 4A V GS = V I, rain Current (A) V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 2V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I AS 0.0Ω Q G Q G Charge 5V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I 3.7A 6.6A 8.2A Starting T, Junction Temperature ( J C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6

7 IRF7477 SO-8 Package etails 5 E - A - - B H 0.25 (.0) M A M e 6X θ e θ A - C - 0. (.004) A B 8X 0.25 (.0) M C A S B S NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M C O NTR O LLIN G IM E NS IO N : IN CH. 3. IMENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. O U TLIN E C O N FO R M S TO JE EC O U TLIN E M S-02A A. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS M O L PR O TRU S IO N S N O T TO E XC EE 0.25 (.006). 6 IM EN SIO N S IS TH E LEN G TH O F LE A FO R S O L ER IN G TO A S UB S TR A TE.. 6 C 8X IM INC HES MILLIMETER S MIN M AX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7

8 IRF7477 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 5mH R G = 25Ω, I AS = 8.2A. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 6/0 8

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized