Ultrafast, Soft Recovery Diode BASE CATHODE CATHODE

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1 Bulletin PD -.9 rev. /00 HEXFRED TM HF5TB60 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count CTHODE BSE CTHODE 4 NODE V R = 600V V F (typ.)* =.V I F(V) = 5 Q rr (typ.)= nc I RRM = 0 t rr (typ.) = ns di (rec)m /dt (typ.) = 50/µs Description International Rectifier's HF5TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 5 amps continuous current, the HF5TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF5TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-0C bsolute Maximum Ratings Parameter Max Units V R Cathode-to-node Voltage 600 V I T C = 00 C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 00 P T C = 5 C Maximum Power Dissipation 5 P T C = 00 C Maximum Power Dissipation 50 C T Operating unction and T STG Storage Temperature Range -55 to +50 W * 5 C

2 HF5TB60 Bulletin PD-.9 rev. /00 Electrical T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode node Breakdown Voltage 600 V I R = 00µ..7 I F = 5 V FM Max Forward Voltage.5.0 V I F = 50 See Fig...7 I F = 5, T = 5 C I RM Max Reverse Leakage Current.5 0 V R = V R Rated See Fig. µ T = 5 C, V R = 0.8 x V R Rated D Rated C T unction Capacitance pf V R = 00V See Fig. L S Series Inductance 8.0 nh Measured lead to lead 5mm from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time I F =.0, di f/dt = 00/µs, V R = 0V t rr See Fig. 5, 6 & ns T = 5 C t rr T = 5 C I F = 5 I RRM Peak Recovery Current T = 5 C I RRM See Fig. 7& T = 5 C V R = 00V Q rr Reverse Recovery Charge 75 T = 5 C nc Q rr See Fig. 9 & T = 5 C di f/dt = 00/µs di (rec)m/dt Peak Rate of Fall of Recovery Current 50 T = 5 C /µs di (rec)m/dt During t b See Fig. & 60 T = 5 C Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead! Lead Temperature 00 C R thc Thermal Resistance, unction to Case.0 R th" Thermal Resistance, unction to mbient 80 K/W R thcs# Wt Thermal Resistance, Case to Heat Sink Weight g 0.07 (oz) Mounting Torque 6.0 Kg-cm lbf in! 0.06 in. from Case (.6mm) for 0 sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased

3 HF5TB60 Bulletin PD-.9 rev. /00 Instantaneous Forward Current - I F () Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0 T = 50 C T = 5 C T = 5 C Reverse Current - I R (µ) unction Capacitance -C T (pf) T = 50 C T = 5 C 0. T = 5 C Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T = 5 C Reverse Voltage - V R (V) Fig. - Typical unction Capacitance vs. Reverse Voltage Thermal Response (Z thc ) D = PDM t t SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t. Peak T = P x Z + TC DM thc t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics

4 HF5TB60 Bulletin PD-.9 rev. / V R = 00V T = 5 C T = 5 C 0 5 V R= 00V T = 5 C T = 5 C 00 0 I F = 50 I F = 5 trr- (nc) 80 I F = 50 I F = 5 Irr- ( ) 5 I F = 0 60 I F = di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt di f/dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt V R = 00V T = 5 C T = 5 C 0000 V = 00V R T = 5 C T = 5 C 000 I F = 50 Qrr- (nc) I F = 5 I F = 0 di (rec) M/dt- ( /µs) 000 I F = 50 I F = 5 I F = di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4

5 HF5TB60 Bulletin PD-.9 rev. /00 REVERSE RECOVERY CIRCUIT 0 IF ta trr t b V R = 00V 0.0 Ω I RRM Q rr 0.5 I RRM di(rec)m/dt 5 4 L = 70µH 0.75 I RRM D.U.T. di f /dt dif/dt DUST G D S IRFP50. dif/dt - Rate of change of current through zero crossing. IRRM - Peak reverse recovery current. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - rea under curve defined by trr and IRRM trr X IRRM Qrr = 5. di(rec)m/dt - Peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 0 - Reverse Recovery Waveform and Definitions 5

6 HF5TB60 Bulletin PD-.9 rev. / (0.4) MX..78 (0.5) DI..54 (0.4). (0.05). (0.05) 5.4 (0.60) 4.84 (0.58).9 (0.).54 (0.0) TERM 6.48 (0.5) 6. (0.4) 4.09 (0.55).47 (0.5).96 (0.6).55 (0.4) 0.0 (0.004).40 (0.05).5 (0.04).04 (0.080) MX (0.04) 0.69 (0.0).89 (0.).64 (0.0) 4.57 (0.8) 4. (0.7) 0.6 (0.0) MX (0.0) REF. Conforms to EDEC Outline TO-0C Dimensions in millimeters and inches WORLD HEDQURTERS: Kansas St., El Segundo, California 9045 U.S.. Tel: (0). Fax: (0). EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CND: 5 Lincoln Court, Brampton, Markham, Ontario L6TZ. Tel: (905) Fax: (905) IR GERMNY: Saalburgstrasse 57, 650 Bad Homburg. Tel: Fax: IR ITLY: Via Liguria 49, 007 Borgaro, Torino. Tel: Fax: IR FR EST: K&H Bldg., F, 0-4 Nishi-Ikebukuro -Chome, Toshima-Ku, Tokyo, apan 7. Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower,-, Singapore Tel: IR TIWN: 6 Fl. Suite D.07, Sec., Tun Haw South Road, Taipei, 067, Taiwan. Tel: Data and specifications subject to change without notice. 6

7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier s Power Control Systems (PCS) business, which closed in pril 007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9990 Revision: 08-Mar-07