60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01

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1 Bulletin PD-0745 rev. D 07/0 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced Parts Count 60EPU04 60APU04 t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters Max Units V R Cathode to Anode Voltage 400 V I F(AV) Continuous Forward Current, T C = 7 C 60 A I FSM Single Pulse Forward Current, T C = 5 C 600 I FRM! Maximum Repetitive Forward Current 0 T, T STG Operating unction and Storage Temperatures - 55 to 75 C!"Square Wave, 0kHz Case Styles 60EPU04 60APU04 TO BASE TO BASE TO-47AC (Modified) TO-47AC

2 Bulletin PD-0745 rev. D 07/0 Electrical T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, V I R = 00µA Blocking Voltage V F Forward Voltage V I F = 60A V I F = 60A, T = 75 C V I F = 60A, T = 5 C I R Reverse Leakage Current µa V R = V R Rated - - ma T = 50 C, V R = V R Rated C T unction Capacitance pf V R = 400V L S Series Inductance nh Measured lead to lead 5mm from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time ns I F = A, di F /dt = 00A/µs, V R = 0V T = 5 C T = 5 C I RRM Peak Recovery Current A T = 5 C I F = 60A V R = 00V di F /dt = 00A/µs T = 5 C Q rr Reverse Recovery Charge nc T = 5 C T = 5 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units R thc Thermal Resistance, unction to Case 0.70 K/W R thcs # Thermal Resistance, Case to Heatsink 0. Wt Weight 5.5 g 0. (oz) T Mounting Torque..4 N * m 0 0 lbf.in #"Mounting Surface, Flat, Smooth and Greased

3 Bulletin PD-0745 rev. D 07/0 Instantaneous Forward Current - I F (A) T = 75 C T = 5 C T = 5 C Reverse Current - I R (µa) unction Capacitance - C T (pf) T = 75 C 5 C 5 C Reverse Voltage - V R (V) Fig. - Typical Values Of Reverse Current Vs. Reverse Voltage T = 5 C Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) 0. D = 0.50 D = 0.0 D = 0.0 D = 0.05 D = 0.0 D = 0.0 Single Pulse (Thermal Resistance) P DM t t Notes:. Duty factor D = t/ t. Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z Characteristics thc

4 Bulletin PD-0745 rev. D 07/ Allowable Case Temperature ( C) Square wave (D = 0.50) 80% Rated Vr applied DC see note () Average Forward Current - IF (AV) (A) Average Power Loss ( Watts ) RMS Limit D = 0.0 D = D = 0.05 D = D = 0.0 D = 0.50 DC Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics trr ( ns ) Vr = 400V Tj = 5 C Tj = 5 C IF = 0A IF = 60A IF = 40A Qrr ( nc ) Vr = 400V Tj = 5 C Tj = 5 C IF = 0A IF = 60A IF = 40A di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery time vs. di F /dt di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt () Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = 80% rated V R 4

5 Bulletin PD-0745 rev. D 07/0 Reverse Recovery Circuit V R = 00V 0.0 Ω dif/dt F /dt ADUST L = 70µH G D IRFP50 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 0 I F t a trr t b I RRM Q rr I RRM di(rec)m/dt I RRM di f F /dt /dt. di F /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions 5

6 Bulletin PD-0745 rev. D 07/0 Outline Table 0.0 (0.800) 9.70 (0.775) 5.90 (0.66) 5.0 (0.60).65 (0.44).55 (0.9) 5.70 (0.5) 5.0 (0.08) DIA (0.7) 4.50 (0.77) ( PLCS.) 5.0 (0.09) 4.70 (0.85).5 (0.098).5 (0.059) 60EPU04 pins TO BASE 4.80 (0.58) 4.0 (0.559) 4.0 (0.70).70 (0.45).40 (0.056).00 (0.09) 0.94 (0.40) 0.86 (0.47).0 (0.087) MAX (0.0) 0.40 (0.).40 (0.095) MAX. Conforms to EDEC Outline TO-47AC (Modified) Dimensions in millimeters and (inches) 0.0 (0.800) 9.70 (0.775) 5.90 (0.66) 5.0 (0.60).65 (0.44).55 (0.9) 5.70 (0.5) 5.0 (0.08) 5.50 (0.7) 4.50 (0.77) ( PLCS.) DIA. 5.0 (0.09) 4.70 (0.85).5 (0.098).5 (0.059) 60APU04 pins TO BASE 4.80 (0.58) 4.0 (0.559) 4.0 (0.70).70 (0.45).40 (0.056).00 (0.09) 5.47 (0.6) 5.4 (0.).0 (0.087) MAX..0 (0.6) 0.80 (0.0) MAX (0.).40 (0.095) MAX. Conforms to EDEC Outline TO-47AC Dimensions in millimeters and (inches) 6

7 Bulletin PD-0745 rev. D 07/0 Ordering Information Table Device Code 60 E P U Current Rating (60 = 60A) - Single Diode - TO-47AC (Modified) 4 - Ultrafast Recovery 5 - Voltage Rating (04 = 400V) E = pins A = pins Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: Kansas St., El Segundo, California 9045, USA Tel: (0) TAC Fax: (0) /0 7

8 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier s Power Control Systems (PCS) business, which closed in April 007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier, IR, the IR logo, HEXFET, HEXSense, HEXDIP, DOL, INTERO, and POWIRTRAIN are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 9990 Revision: -Mar-07